SI4493DY

Si4493DY New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 0.01225 @ VGS = - 2.5 V - 11 FEATURES ID (A) - 14 rDS(on) (W) 0.00775 @ VGS = - 4.5 V D TrenchFETr Power MOSFET APPLICATIONS D Load Switch S SO-8 S S S G 1 2 3 4 Top View D Ordering Information: Si4493DY Si4493DY-T1 (with Tape and Reel) P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 11 IDM IS - 2.7 3.0 1.9 - 55 to 150 - 50 - 1.36 1.5 0.95 W _C -8 A Symbol VDS VGS 10 secs Steady State - 20 "12 Unit V - 14 - 10 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72256 S-31420—Rev. A, 07-Jul-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 33 70 16 Maximum 42 84 21 Unit _C/W 1 Si4493DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "12 V VDS = - 16 V, VGS = 0 V VDS = - 16 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 14 A VGS = - 2.5 V, ID = - 11 A VDS = - 10 V, ID = - 14 A IS = - 2.7 A, VGS = 0 V - 30 0.0065 0.010 60 - 0.68 - 1.1 0.00775 0.01225 - 0.6 - 1.4 "100 -1 - 10 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf Rg trr IF = - 2.7 A, di/dt = 100 A/ms VDD = - 10 V, RL = 10 W V, ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 10 V, VGS = - 4.5 V, ID = - 14 A 65 14.5 21 110 150 220 140 3.8 85 130 165 225 330 210 W ns ns 110 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 5 thru 2.5 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Transfer Characteristics 30 30 20 2V 20 TC = 125_C 10 25_C - 55_C 1.6 2.0 2.4 10 0 0 1 2 3 4 5 0 0.0 0.4 0.8 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72256 S-31420—Rev. A, 07-Jul-03 www.vishay.com 2 Si4493DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.015 r DS(on) - On-Resistance ( W ) 9000 Vishay Siliconix Capacitance C - Capacitance (pF) 0.012 VGS = 2.5 V 0.009 VGS = 4.5 V 0.006 7200 Ciss 5400 3600 Coss 0.003 1800 Crss 0.000 0 10 20 30 40 50 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 14 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 14 A 1.4 3 r DS(on) - On-Resistance (W ) (Normalized) 28 42 56 70 1.2 2 1.0 1 0.8 0 0 14 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 100 0.030 On-Resistance vs. Gate-to-Source Voltage 10 TJ = 150_C r DS(on) - On-Resistance ( W ) 0.024 I S - Source Current (A) 0.018 ID = 14 A 1 TJ = 25_C 0.012 0.006 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72256 S-31420—Rev. A, 07-Jul-03 www.vishay.com 3 Si4493DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 100 Single Pulse Power, Junction-to-Ambient 0.4 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 80 60 0.0 40 - 0.2 20 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 10 I D - Drain Current (A) 1 ms 10 ms 100 ms 1s 10 s 0.1 TC = 25_C Single Pulse dc 1 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com 4 Document Number: 72256 S-31420—Rev. A, 07-Jul-03 Si4493DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72256 S-31420—Rev. A, 07-Jul-03 www.vishay.com 5