Si4500BDY
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
N-Channel N Channel P-Channel P Channel 20 −20
FEATURES
rDS(on) (W)
0.020 @ VGS = 4.5 V 0.030 @ VGS = 2.5 V 0.060 @ VGS = −4.5 V 0.100 @ VGS = −2.5 V
ID (A)
9.1 7.5 −5.3 −4.1
D TrenchFETr Power MOSFET
SO-8
S1 G1 S2 G2 1 2 3 4 Top View G1 Ordering Information: Si4500BDY Si4500BDY-T1 (with Tape and Reel) Si4500BDY—E3 (Lead (Pb)-Free) Si4500BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel) 8 7 6 5 D D D D G2
S2
D
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
P-Channel 10 sec. Steady State
−20 "12
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 sec.
Steady State
20 "12
Unit
V
9.1 7.3 30 2.1 2.5 1.6
6.6 5.3 1.1 1.3 0.8
−5.3 −4.9 −20 −2.1 2.5 1.6 −55 to 150
−3.8 −3.1 −1.1 1.3 0.8 W _C A
THERMAL RESISTANCE RATINGS
N-Channel Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board. b. t v 10 sec Document Number: 72281 S-41428—Rev. B, 26-Jul-04 www.vishay.com t v 10 sec Steady-State Steady-State
P- Channel Typ
41 75 23
Symbol
RthJA RthJF
Typ
40 75 20
Max
50 95 22
Max
50 95 26
Unit
_C/W
1
Si4500BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage VGS( h) GS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = −16 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = −16 V, VGS = 0 V, TJ = 55_C On-State On State Drain Currentb ID( ) D(on) VDS = 5 V, VGS = 4.5 V VDS = −5 V, VGS = −4.5 V VGS = 4.5 V, ID = 9.1 A Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = −4.5 V, ID = −5.3 A VGS = 2.5 V, ID = 3.3 A VGS = −2.5 V, ID = −1 A Forward Transconductanceb gf fs VSD VDS = 15 V, ID = 9.1 A VDS = −15 V, ID = −5.3 A IS = 2.1 A, VGS = 0 V IS = −2.1 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 −20 0.016 0.048 0.024 0.082 29 11 0.8 −0.8 1.2 −1.2 0.020 0.060 0.030 0.100 S W 0.6 −0.6 1.5 −1.5 "100 "100 1 −1 5 −5 A mA V
Symbol
Test Condition
Min
Typa
Max
Unit
Gate-Body Gate Body Leakage
nA
Diode Forward Voltageb
V
Dynamica
Total Gate Charge Qg Qgs Qgd d td( ) d(on) tr td( ff) d(off) tf trr IF = 2.1 A, di/dt = 100 A/ms IF = −2.1 A, di/dt = 100 A/ms N-Channel N Ch l VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W P-Channel VDD = −10 V, RL = 10 W V 10 ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W 4.5 N-Channel N-Channel VDS = 10 V, VGS = 4.5 V, ID = 9.1 A P-Channel VDS = −10 V, VGS = −4 5 V ID = −5 3 A V 4.5 V, 5.3 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 11 6.0 2.5 1.3 3.2 1.6 35 20 50 35 31 55 15 35 30 25 50 30 80 60 50 85 30 60 60 50 ns 17 9 nC
Gate-Source Gate Source Charge
Gate-Drain Gate Drain Charge
Turn-On Turn On Delay Time
Rise Time
Turn-Off Turn Off Delay Time
Fall Time
Source-Drain Source Drain Reverse Recovery Time
Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
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Document Number: 72281 S-41428—Rev. B, 26-Jul-04
Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30 25 ID − Drain Current (A) 20 15 2V 10 5 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) VGS = 5 thru 3 V 2.5 V 30 25 ID − Drain Current (A) 20 15 10 5 0 0.0
N−CHANNEL
Transfer Characteristics
TC = 125_C 25_C −55_C 0.5 1.0 1.5 2.0 2.5 3.0
1.5 V
VGS − Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.08 0.07 r DS(on)− On-Resistance ( W ) C − Capacitance (pF) 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0 5 10 15 20 25 30 ID − Drain Current (A) VGS = 2.5 V VGS = 4.5 V 1600 1400 1200 1000 800 600 400 200 Crss 0 0 4
Capacitance
Ciss
Coss
8
12
16
20
VDS − Drain-to-Source Voltage (V)
Gate Charge
5 VDS = 10 V ID = 9.1 A rDS(on) − On-Resiistance (Normalized) 1.6
On-Resistance vs. Junction Temperature
V GS − Gate-to-Source Voltage (V)
4
1.4
VGS = 4.5 V ID = 9.1 A
3
1.2
2
1.0
1
0.8
0 0 2 4 6 8 10 12 Qg − Total Gate Charge (nC)
0.6 −50
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Document Number: 72281 S-41428—Rev. B, 26-Jul-04
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Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30
N−CHANNEL
0.08 0.07
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
r DS(on)− On-Resistance ( W )
I S − Source Current (A)
TJ = 150_C 10
0.06 0.05 0.04 0.03 0.02 0.01 ID = 3.3 A
ID = 9.1 A
TJ = 25_C
0
0
0.3
0.6
0.9
1.2
1.5
0.00 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V)
VSD − Source-to-Drain Voltage (V)
Threshold Voltage
0.4 ID = 250 mA 0.2 VGS(th) Variance (V) Power (W) 80 70 60 50 40 30 20 −0.4 10 −0.6 −50 0 0.001
Single Pulse Power
−0.0
−0.2
−25
0
25
50
75
100
125
150
0.01
0.1
1 Time (sec)
10
100
600
TJ − Temperature (_C)
100
Safe Operating Area
rDS(on) Limited IDM Limited P(t) = 0.0001
10 I D − Drain Current (A) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse BVDSS Limited 1 10 100 P(t) = 10 dc
0.01 0.1
VDS − Drain-to-Source Voltage (V) www.vishay.com Document Number: 72281 S-41428—Rev. B, 26-Jul-04
4
Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2 1 Normalized Effective Transient Thermal Impedance
N−CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1
Notes: PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 75_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
2 1 Normalized Effective Transient Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 VGS = 5 thru 3.5 V 20 3V 16 I D − Drain Current (A)
P-CHANNEL
Transfer Characteristics
TC = −55_C 25_C 125_C
16 I D − Drain Current (A)
12 2.5 V 8 2V 1.5 V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V)
12
8
4
4
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS − Gate-to-Source Voltage (V) www.vishay.com
Document Number: 72281 S-41428—Rev. B, 26-Jul-04
5
Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20 r DS(on) − On-Resistance ( W ) 800 700 C − Capacitance (pF) 0.16 VGS = 2.5 V 0.12 600 500 400 300 200 100 0.00 0 4 8 12 16 20 0 0 4 8 12 16 20 Coss Ciss
P-CHANNEL
Capacitance
0.08 VGS = 4.5 V 0.04
Crss
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
Gate Charge
5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 5.3 A 4 rDS(on) − On-Resiistance (Normalized) 1.4 1.6
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 5.3 A
3
1.2
2
1.0
1
0.8
0 0 1 2 3 4 5 6 7 8 Qg − Total Gate Charge (nC)
0.6 −50
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20 TJ = 150_C I S − Source Current (A) 10 r DS(on) − On-Resistance ( W ) 0.20
On-Resistance vs. Gate-to-Source Voltage
0.16
0.12 ID = 1 A 0.08 ID = 5.3 A
TJ = 25_C
0.04
1 0.0
0.00 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
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Document Number: 72281 S-41428—Rev. B, 26-Jul-04
Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.4 0.3 VGS(th) Variance (V) 0.2 0.1 0.0 −0.1 −0.2 −50
P-CHANNEL
Single Pulse Power
80 70 60
Threshold Voltage
Power (W)
ID = 250 mA
50 40 30 20 10 0 0.001
−25
0
25
50
75
100
125
150
0.01
0.1
1 Time (sec)
10
100
600
TJ − Temperature (_C)
100
Safe Operating Area
IDM Limited rDS(on) Limited P(t) = 0.0001 P(t) = 0.001
10 I D − Drain Current (A)
1
ID(on) Limited TA = 25_C Single Pulse BVDSS Limited
P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc
0.1
0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Notes: PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 75_C/W
t1 t2
Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1
3. TJM − TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Document Number: 72281 S-41428—Rev. B, 26-Jul-04
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Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1
P-CHANNEL
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10
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Document Number: 72281 S-41428—Rev. B, 26-Jul-04
