SI4500BDY_06

Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 rDS(on) (Ω) 0.020 at VGS = 4.5 V 0.030 at VGS = 2.5 V 0.060 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V ID (A) 9.1 7.5 - 5.3 - 4.1 FEATURES • TrenchFET® Power MOSFET Pb-free Available RoHS* COMPLIANT S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4500BDY-T1 Si4500BDY-T1-E3 (Lead (Pb)-free) 8 7 6 5 D D D D G1 D G2 S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a,b Pulsed Drain Current Continuous Source Current (Diode Conduction)a,b Maximum Power Dissipationa,b TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 2.1 2.5 1.6 9.1 7.3 30 1.1 1.3 0.8 - 2.1 2.5 1.6 - 55 to 150 N-Channel 10 sec Steady State 20 ± 12 6.6 5.3 - 5.3 - 4.9 - 20 - 1.1 1.3 0.8 W °C P-Channel 10 sec Steady State - 20 ± 12 - 3.8 - 3.1 A Unit V Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 Board. b. t ≤ 10 sec. t ≤ 10 sec Steady State Steady State Symbol RthJA RthJF N-Channel Typ 40 75 20 Max 50 95 22 41 75 23 P-Channel Typ Max 50 95 26 °C/W Unit * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72281 S-61005-Rev. C, 12-Jun-06 www.vishay.com 1 Si4500BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 12 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS = - 20 V, VGS = 0 V, TJ = 55 °C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 4.5 V VDS = - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 9.1 A Drain-Source On-State Resistanceb rDS(on) VGS = - 4.5 V, ID = - 5.3 A VGS = 2.5 V, ID = 3.3 A VGS = - 2.5 V, ID = - 1 A Forward Transconductanceb Diode Forward Voltageb Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 5.3 A N-Ch N-Channel VDS = 10 V, VGS = 4.5 V, ID = 9.1 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω IF = 2.1 A, di/dt = 100 A/µs IF = - 2.1 A, di/dt = 100 A/µs P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 11 6.0 2.5 1.3 3.2 1.6 35 20 50 35 31 55 15 35 30 25 50 30 80 60 50 85 30 60 60 50 ns 17 9 nC gfs VSD VDS = 15 V, ID = 9.1 A VDS = - 15 V, ID = - 5.3 A IS = 2.1 A, VGS = 0 V IS = - 2.1 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 - 20 0.016 0.048 0.024 0.082 29 11 0.8 - 0.8 1.2 - 1.2 0.020 0.060 0.030 0.100 S V Ω 0.6 - 0.6 1.5 - 1.5 ± 100 ± 100 1 -1 5 -5 A µA V nA Symbol Test Conditions Min Typa Max Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72281 S-61005-Rev. C, 12-Jun-06 Si4500BDY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 30 VGS = 5 thru 3 V 2.5 V 25 ID - Drain Current (A) ID - Drain Current (A) 25 25 °C, unless noted 30 20 20 15 2V 10 15 10 TC = 125 °C 25 °C - 55 °C 5 1.5 V 0 0 1 2 3 4 5 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.08 0.07 r DS(on) - On-Resistance (Ω) 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0 5 10 15 20 25 30 VGS = 2.5 V VGS = 4.5 V 1600 1400 Transfer Characteristics Ciss C - Capacitance (pF) 1200 1000 800 600 Coss 400 200 Crss 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 VDS = 10 V ID = 9.1 A rDS(on) - On-Resistance (Normalized) 1.6 VGS = 4.5 V ID = 9.1 A Capacitance V GS - Gate-to-Source Voltage (V) 4 1.4 3 1.2 2 1.0 1 0.8 0 0 2 4 6 8 10 12 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 72281 S-61005-Rev. C, 12-Jun-06 www.vishay.com 3 Si4500BDY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 30 0.08 0.07 r DS(on) - On-Resistance (Ω) I S - Source Current (A) TJ = 150 °C 10 ID = 9.1 A 0.06 0.05 ID = 3.3 A 0.04 0.03 0.02 0.01 0 0 0.3 0.6 0.9 1.2 1.5 0.00 0 1 2 3 4 5 TJ = 25 °C VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 ID = 250 µA 0.2 60 VGS(th) Variance (V) Power (W) 0.0 50 40 30 20 - 0.4 10 - 0.6 - 50 80 70 On-Resistance vs. Gate-to-Source Voltage - 0.2 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (°C) Threshold Voltage Single Pulse Power 100 rDS(on) Limited IDM Limited P(t) = 0.0001 10 I D - Drain Current (A) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TA = 25 °C Single Pulse P(t) = 10 dc BVDSS Limited 1 10 100 0.01 0.1 VDS - Drain-to-Source Voltage (V) Safe Operating Area www.vishay.com 4 Document Number: 72281 S-61005-Rev. C, 12-Jun-06 Si4500BDY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10 - 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = R thJA = 75 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 72281 S-61005-Rev. C, 12-Jun-06 www.vishay.com 5 Si4500BDY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 20 VGS = 5 thru 3.5 V 3V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 TC = - 55 °C 25 °C 12 2.5 V 8 2V 4 1.5 V 0 0 1 2 3 4 5 12 125 °C 8 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.20 800 700 r DS(on) - On-Resistance (Ω) C - Capacitance (pF) 0.16 VGS = 2.5 V 0.12 Transfer Characteristics Ciss 600 500 400 300 200 Coss 0.08 VGS = 4.5 V 0.04 100 Crss 0.00 0 4 8 12 16 20 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 5.3 A 4 rDS(on) - On-Resistance (Normalized) 1.6 VGS = 4.5 V ID = 5.3 A 1.4 Capacitance 3 1.2 2 1.0 1 0.8 0 0 1 2 3 4 5 6 7 8 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 6 Document Number: 72281 S-61005-Rev. C, 12-Jun-06 Si4500BDY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 20 TJ = 150 °C I S - Source Current (A) 10 r DS(on) - On-Resistance (Ω) 0.20 0.16 0.12 ID = 1 A 0.08 ID = 5.3 A TJ = 25 °C 0.04 1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 0.4 80 70 60 VGS(th) Variance (V) 0.2 Power (W) ID = 250 µA 50 40 30 20 - 0.1 10 - 0.2 - 50 On-Resistance vs. Gate-to-Source Voltage 0.3 0.1 0.0 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (°C) Threshold Voltage Single Pulse Power 100 IDM Limited rDS(on) Limited 10 I D - Drain Current (A) P(t) = 0.0001 P(t) = 0.001 1 ID(on) Limited TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 0.1 VDS - Drain-to-Source Voltage (V) Safe Operating Area Document Number: 72281 S-61005-Rev. C, 12-Jun-06 www.vishay.com 7 Si4500BDY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 75 °C/W Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72281. www.vishay.com 8 Document Number: 72281 S-61005-Rev. C, 12-Jun-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1