Si4500DY
New Product
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
N-Channel 20
rDS(on) (W)
0.030 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V 0.065 @ VGS = –4.5 V 0.100 @ VGS = –2.5 V
ID (A)
"7.0 "6.0 "4.5 "3.5
P-Channel
–20
S2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D D D D
G2
D
G1
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage
a, Continuous Drain Current (TJ = 150_C)a, b Drain Current
Symbol
VDS VGS TA = 25_C TA = 70_C ID IDM IS TA = 25_C TA = 70_C PD TJ, Tstg
N-Channel
20 "12 "7.0 "5.5 "30 1.7 2.5 1.6
P-Channel
–20 "12 "4.5 "3.5 "20 –1.7
Unit
V
Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Power Dissipationa, Operating Junction and Storage Temperature Range
A
W _C
–55 to 150
THERMAL RESISTANCE RATINGS
N-Channel Parameter P
Maximum Junction-to-Ambient Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on FR4 Board. b. t v 10 sec Document Number: 70880 S-00269—Rev. A, 26-Apr-99 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady-State Steady-State
P- Channel Typ
40 73 20
Symbol S bl
RthJA RthJC
Typ
38 73 17
Max
50 95 22
Max
50 95 26
Unit Ui
_C/W
2-1
Si4500DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static
Gate Threshold Voltage Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current Z Gate Voltage Drain Current l i IDSS VDS = –16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55_C VDS = –16 V, VGS = 0 V, TJ = 55_C On-State Drain Currentb Drain Current ID(on) VDS = 5 V, VGS = 4.5 V VDS = –5 V, VGS = –4.5 V VGS = 4.5 V, ID = 7.0 A DiS i Drain-Source On-State Resistanceb On S Resistance rDS(on) VGS = –4.5 V, ID = –4.5 A VGS = 2.5 V, ID = 6.0 A VGS = –2.5 V, ID = –3.5 A Forward Transconductanceb Transconductance gfs VDS = 15 V, ID = 7.0 A VDS = –15 V, ID = –4.5 A IS = 1.7 A, VGS = 0 V IS = –1.7 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 –20 0.022 0.058 0.030 0.087 22 10 0.70 –0.80 1.2 –1.2 V 0.030 0.065 0.040 0.100 S W 0.6 –0.6 "100 "100 1 –1 5 –5 A mA nA V
Symbol
Test Condition
Min
Typa
Max
Unit
Gate-Body Leakage Leakage
IGSS
Diode Forward Voltageb Forward Voltage
VSD
Dynamica
Total Gate Charge Gate Charge Qg N-Channel N Ch l Channel VDS = 10 V, VGS = 4.5 V, ID = 3.5 A P-Channel VDS = –10 V, VGS = –4 5 V, ID = –4 5 A V 4.5 V 4.5 Gate-Drain Charge Charge Qgd N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Ch l N-Channel N Channel VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = –10 V RL = 10 W V, 10 ID ^ –1 A, VGEN = –4.5 V, RG = 6 W 4.5 V, N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IF = 1.7 A, di/dt = 100 A/ms .7 A, di/dt A/ N-Ch P-Ch 13 8.5 3.0 2.8 3.3 1.7 22 15 40 32 50 57 20 40 40 40 40 30 80 60 100 100 40 80 80 80 ns 25 15 C nC
Gate-Source Charge Charge
Qgs
Turn-On Delay Time Delay Time
td(on)
Rise Time Time
tr
Turn-Off Delay Time Delay Time
td(off)
Fall Time Time
tf
Source-Drain Reverse Recovery Time Reverse Recovery Time
trr
Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
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2-2
Document Number: 70880 S-00269—Rev. A, 26-Apr-99
Si4500DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30 VGS = 5 thru 3 V 2.5 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 30
Vishay Siliconix
N-CHANNEL
Transfer Characteristics
18
18
12
2V
12 TC = 125_C 6 25_C –55_C 0
6 1.5 V 0 0 2 4 6 8 10
0
0.5
1.0
1.5
2.0
2.5
3.0
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.08 2100 1800 r DS(on)– On-Resistance ( W ) C – Capacitance (pF) 0.06
Capacitance
Ciss 1500 1200 900 600 300 Crss
0.04
VGS = 2.5 V VGS = 4.5 V
0.02
Coss
0 0 6 12 18 24 30
0 0 4 8 12 16 20
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
4.5 VDS = 10 V ID = 4.5 A
Gate Charge
1.8 1.6 r DS(on)– On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 –50
On-Resistance vs. Junction Temperature
V GS – Gate-to-Source Voltage (V)
3.6
VGS = 4.5 V ID = 4.5 A
2.7
1.8
0.9
0 0 3 6 9 12 15 Qg – Total Gate Charge (nC)
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
Document Number: 70880 S-00269—Rev. A, 26-Apr-99
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2-3
Si4500DY
Vishay Siliconix
New Product
N-CHANNEL
On-Resistance vs. Gate-to-Source Voltage
0.10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
I S – Source Current (A)
10
0.08 ID = 4.5 A 0.06 TJ = 150_C 0.04 r DS(on)
TJ = 25_C
0.02
0 0 0.2 0.4 0.6 0.8 1.0 1.2
0 0 2 4 6 8 10
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.4 ID = 250 mA 0.2 V GS(th) Variance (V) Power (W) 60 80
Single Pulse Power, Juncion-To-Ambient
–0.0
40
–0.2 20 –0.4
–0.6 –50
0 –25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 73_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted
Single Pulse 0.01 10–4 10–3 10–2 10–1 1
10
100
600
Square Wave Pulse Duration (sec)
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2-4
Document Number: 70880 S-00269—Rev. A, 26-Apr-99
Si4500DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2 1 Duty Cycle = 0.5
Vishay Siliconix
N-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 3V 16 VGS = 5, 4.5, 4, 3.5 V I D – Drain Current (A) 2.5 V 12 I D – Drain Current (A) 12 16 20
P-CHANNEL
Transfer Characteristics
TC = –55_C 125_C 25_C 8
8 2V 4 1.5 V 0 0 1 2 3 4 5
4
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20 1500
Capacitance
r DS(on)– On-Resistance ( W )
0.16 C – Capacitance (pF)
1200
Ciss
0.12
VGS = 2.5 V
VGS = 2.7 V
900
0.08
VGS = 4.5 V
600 Coss
0.04
300 Crss
0 0 4 8 12 16 20
0 0 4 8 12 16 20
ID – Drain Current (A) Document Number: 70880 S-00269—Rev. A, 26-Apr-99
VDS – Drain-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600
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Si4500DY
Vishay Siliconix
New Product
P-CHANNEL
1.6
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
5 VDS = 10 V ID = 4.4 A r DS(on)– On-Resistance ( W ) (Normalized) 4 1.4
Gate Charge
On-Resistance vs. Junction Temperature
V GS – Gate-to-Source Voltage (V)
VGS = 4.5 V ID = 4.4 A
3
1.2
2
1.0
1
0.8
0 0 2 4 6 8 10 Qg – Total Gate Charge (nC)
0.6 –50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20 0.20
On-Resistance vs. Gate-to-Source Voltage
10 I S – Source Current (A)
r DS(on)– On-Resistance ( W )
0.16
0.12 ID = 4.4 A 0.08
TJ = 150_C
TJ = 25_C
0.04
1 0 0.25 0.50 0.75 1.00 1.25 1.50
0 0 1 2 3 4 5
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.6 80
Single Pulse Power, Juncion-To-Ambient
0.4 60 V GS(th) Variance (V) 0.2 Power (W)
ID = 250 mA
40
0.0 20 –0.2
–0.4 –50
0 –25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ – Temperature (_C)
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2-6
Document Number: 70880 S-00269—Rev. A, 26-Apr-99
Si4500DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
Vishay Siliconix
P-CHANNEL
0.2 0.1 0.1 0.05 0.02
Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 73_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted
Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600
Square Wave Pulse Duration (sec)
2 1 Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10
Document Number: 70880 S-00269—Rev. A, 26-Apr-99
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