Si4501BDY
Vishay Siliconix
Complementary (N- and P-Channel) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel P-Channel 30 -8 RDS(on) () 0.017 at VGS = 10 V 0.020 at VGS = 4.5 V 0.027 at VGS = - 4.5 V 0.037 at VGS = - 2.5 V ID (A)a Qg (Typ.) 12 11 -8 - 6.8 7.9 16.5
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Level Shift • Load Switch
S2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4501BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 D D D D
G2
D
G1
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD TC = 25 °C TA = 25 °C IDM IS ISM IAS EAS ID Symbol VDS VGS N-Channel 30 ± 20 12 9.5 9b, c 7.2 40
b, c
P-Channel -8 ±8 -8 - 6.4 - 6.4b, c - 5.1b, c - 40 - 2.8 - 1.8b, c - 40 -5 1.25 3.1 2.0 2b, c 1.28b, c
Unit V
A
4.0 2.2b, c 40 5 1.25 4.5 2.8 2.5
b, c
mJ
W
1.6b, c - 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t 10 s Steady State Symbol RthJA RthJF Typ. 40 22 Max. 50 28 P-Channel Typ. 52 32 Max. 62.5 40 Unit °C/W
Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 95 °C/W (N-Channel) and 110 °C/W (P-Channel). Document Number: 67441 S11-0245-Rev. A, 14-Feb-11 www.vishay.com 1
Si4501BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = - 250 µA ID = 250 µA ID = - 250 µA ID = 250 µA ID = - 250 µA VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 20 V VDS = 0 V, VGS = ± 8 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 8 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS = - 8 V, VGS = 0 V, TJ = 55 °C On-State Drain Currentb ID(on) VDS =5 V, VGS = 10 V VDS =- 5 V, VGS = - 4.5 V VGS = 10 V, ID = 10 A Drain-Source On-State Resistanceb RDS(on) VGS = - 4.5 V, ID = - 6 A VGS = 4.5 V, ID = 7 A VGS = - 2.5 V, ID = - 5 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss P-Channel VDS = - 4 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 10 A Total Gate Charge Qg VDS = - 4 V, VGS = - 8 V, ID = - 6 A N-Channel VDS = 15 V, VGS = 4.5 V, ID = 10 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg P-Channel VDS = - 4 V, VGS = - 4.5 V, ID = - -6 A f = 1 MHz N-Ch N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.3 0.9 805 1400 170 660 80 630 16.5 27.5 7.9 16.5 2.2 2.2 2.7 4.8 1.1 4.2 2.2 8.4 25 42 12 25 nC pF gfs VDS = 15 V, ID = 10 A VDS = - 15 V, ID = - 6 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 - 20 0.0135 0.021 0.016 0.029 29 24 0.017 0.027 0.020 0.037 S 0.8 - 0.45 30 -8 34 -3 - 4.5 2.6 2 - 0.9 ± 100 ± 100 1 -1 5 -5 A µA V nA mV/°C V Symbol Test Conditions Min. Typ.a Max. Unit
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Document Number: 67441 S11-0245-Rev. A, 14-Feb-11
Si4501BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb N-Channel IF = 1.8 A, dI/dt = 100 A/µs, TJ = 25 °C P-Channel IF = - 1.8 A, dI/dt = - 100 A/µs, TJ = 25 °C IS = 2 A IS = - 2 A TC = 25 °C N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.72 - 0.71 14 49 5.5 47 7.5 26 6.5 23 ns 4 - 2.8 40 - 40 1.1 - 1.1 28 98 11 94 V ns nC A td(on) tr td(off) tf td(on) tr td(off) tf N-Ch N-Channel VDD = 15 V, RL = 3 ID 5 A, VGEN = 10 V, Rg = 1 P-Channel VDD = - 4 V, RL = 0.8 ID - 5 A, VGEN = - 10 V, Rg = 1 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDD = 15 V, RL = 3 ID 5 A, VGEN = 4.5 V, Rg = 1 P-Channel VDD = - 4 V, RL = 0.8 ID - 5 A, VGEN = - 4.5 V, Rg = 1 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 7 6 11 12 15 35 8 9 16 22 55 18 22 34 10 14 14 12 22 24 30 65 16 18 30 40 100 35 40 65 20 28 ns Symbol Test Conditions Min. Typ.a Max. Unit
Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Document Number: 67441 S11-0245-Rev. A, 14-Feb-11
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Si4501BDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40 VGS = 10 V thru 4 V 32 ID - Drain Current (A) 8 10
24
VGS = 3 V
ID - Drain Current (A)
6 TC = 25 °C 4
16
8 VGS = 2 V 0 0.0
2 TC = 125 °C 0 0.5 1.0 1.5 2.0 2.5 0.0 0.6 1.2 1.8 2.4 3.0 TC = - 55 °C
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.020 1100
Transfer Characteristics
0.018 RDS(on) - On-Resistance (Ω) C - Capacitance (pF)
880 Ciss 660
0.016
VGS = 4.5 V
0.014 VGS = 10 V 0.012
440 Coss 220 Crss
0.010 0 8 16 24 32 40
0 0 6 12 18 24 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10 ID = 10 A
VGS - Gate-to-Source Voltage (V)
Capacitance
1.8 ID = 10 A 1.6 VGS = 10 V
8 VDS = 15 V 6 VDS = 10 V 4
RDS(on) - On-Resistance (Normalized)
1.4
1.2
VGS = 4.5 V
VDS = 20 V
1.0
2
0.8
0 0.0
3.4
6.8
10.2
13.6
17.0
0.6 - 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge www.vishay.com 4
On-Resistance vs. Junction Temperature Document Number: 67441 S11-0245-Rev. A, 14-Feb-11
Si4501BDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.05 ID = 10 A 10 IS - Source Current (A) TJ = 150 °C 1 TJ = 25 °C RDS(on) - On-Resistance (Ω) 0.04
0.03
0.1
0.02 TJ = 25 °C
TJ = 125 °C
0.01
0.01
0.001 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4 80
On-Resistance vs. Gate-to-Source Voltage
0.2
64
VGS(th) Variance (V)
0 Power (W) 48
- 0.2 ID = 5 mA - 0.4 ID = 250 μA - 0.6
32
16
- 0.8 - 50
- 25
0
25
50
75
100
125
150
0 0.001
0.01
0.1 Time (s)
1
10
TJ - Temperature (°C)
Threshold Voltage
100 IDM Limited
Single Pulse Power, Junction-to-Ambient
10 ID - Drain Current (A)
ID Limited 1 ms
1 Limited by RDS(on)* 0.1 TC = 25 °C Single Pulse 0.01 0.01 0.1 1
10 ms 100 ms 1s 10 s DC BVDSS Limited 10 100
VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient Document Number: 67441 S11-0245-Rev. A, 14-Feb-11 www.vishay.com 5
Si4501BDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
13.5
10.8 ID - Drain Current (A)
8.1
5.4
2.7
0.0 0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
5.5
1.6
4.4
1.3
Power (W)
Power (W)
3.3
1.0
2.2
0.6
1.1
0.3
0.0 0 25 50 75 100 125 150
0.0 0 25 50 75 100 125 150
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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Document Number: 67441 S11-0245-Rev. A, 14-Feb-11
Si4501BDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02
PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 95 °C/W 3. T JM - TA = PDMZthJA(t) Notes:
0.01 0.0001
Single Pulse 0.001 0.01 0.1 1 10
4. Surface Mounted
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05
0.02 Single Pulse 0.01 0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 67441 S11-0245-Rev. A, 14-Feb-11
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Si4501BDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40 VGS = 5 V thru 3 V 32 ID - Drain Current (A) VGS = 2.5 V ID - Drain Current (A) 24 VGS = 2 V 16 6 TC = 25 °C 4 8 10
8
VGS = 1.5 V VGS = 1 V 0.0 0.5 1.0 1.5 2.0 2.5
2 TC = 125 °C TC = - 55 °C 0.4 0.8 1.2 1.6 2.0
0
0 0.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.040
2200
RDS(on) - On-Resistance (Ω)
0.035 C - Capacitance (pF)
1760 Ciss 1320 Crss Coss
0.030
VGS = 2.5 V
0.025 VGS = 4.5 V 0.020
880
440
0.015 0 6 12 18 24 30
0 0 2 3 5 6 8 VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8 ID = 6 A
RDS(on) - On-Resistance (Normalized)
Capacitance
1.5 ID = 6 A 1.3 VGS = 2.5 V 1.1 VGS = 4.5 V
VGS - Gate-to-Source Voltage (V)
6
5 VDS = 4 V 3 VDS = 6 V
0.9
2
0.7
0 0 6 12 18 24 30 Qg - Total Gate Charge (nC)
0.5 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature Document Number: 67441 S11-0245-Rev. A, 14-Feb-11
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Si4501BDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.15 ID = 6 A 10 IS - Source Current (A) TJ = 150 °C 1 TJ = 25 °C RDS(on) - On-Resistance (Ω) 0.12
0.09
0.1
0.06 TJ = 125 °C TJ = 25 °C
0.01
0.03
0.001 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4 50
On-Resistance vs. Gate-to-Source Voltage
0.3 ID = 250 μA ID = 5 mA Power (W)
40
VGS(th) Variance (V)
0.2
30
0.1
20
0 - 0.1 10
- 0.2 - 50
- 25
0
25
50
75
100
125
150
0 0.001
0.01
0.1 Time (s)
1
10
TJ - Temperature (°C)
Threshold Voltage
100 IDM Limited 10 ID - Drain Current (A)
Single Pulse Power, Junction-to-Ambient
ID Limited
1 ms 10 ms
1 100 ms Limited by RDS(on)* 0.1 TC = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1s 10 s DC
1
10
100
VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient Document Number: 67441 S11-0245-Rev. A, 14-Feb-11 www.vishay.com 9
Si4501BDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
8 ID - Drain Current (A)
6
4
2
0 0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
3.60 1.5
2.88
1.2
Power (W)
1.44
Power (W) 0 25 50 75 100 125 150
2.16
0.9
0.6
0.72
0.3
0.00 TC - Case Temperature (°C)
0.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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Document Number: 67441 S11-0245-Rev. A, 14-Feb-11
Si4501BDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05
t1 Notes: PDM
0.02
t2 1. Duty Cycle, D =
t1 t2 2. Per Unit Base = R thJA = 110 °C/W
Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10
3. T JM - TA = PDMZthJA(t) 4. Surface Mounted
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67441.
Document Number: 67441 S11-0245-Rev. A, 14-Feb-11
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Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
7
6
5
E 1 2 3 4
H
S
D 0.25 mm (Gage Plane) A
h x 45 C
All Leads q L 0.101 mm 0.004"
e
B
A1
MILLIMETERS DIM A A1 B C D E e H h L q S 5.80 0.25 0.50 0° 0.44 Min 1.35 0.10 0.35 0.19 4.80 3.80 1.27 BSC 6.20 0.50 0.93 8° 0.64 0.228 0.010 0.020 0° 0.018 Max 1.75 0.20 0.51 0.25 5.00 4.00 Min 0.053 0.004 0.014 0.0075 0.189 0.150
INCHES Max 0.069 0.008 0.020 0.010 0.196 0.157 0.050 BSC 0.244 0.020 0.037 8° 0.026
ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498
Document Number: 71192 11-Sep-06
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VISHAY SILICONIX
TrenchFET® Power MOSFETs
Application Note 808
Mounting LITTLE FOOT®, SO-8 Power MOSFETs
Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/ppg?72286), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad to the pad set for a power MOSFET, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. In the case of the SO-8 package, the thermal connections are very simple. Pins 5, 6, 7, and 8 are the drain of the MOSFET for a single MOSFET package and are connected together. In a dual package, pins 5 and 6 are one drain, and pins 7 and 8 are the other drain. For a small-signal device or integrated circuit, typical connections would be made with traces that are 0.020 inches wide. Since the drain pins serve the additional function of providing the thermal connection to the package, this level of connection is inadequate. The total cross section of the copper may be adequate to carry the current required for the application, but it presents a large thermal impedance. Also, heat spreads in a circular fashion from the heat source. In this case the drain pins are the heat sources when looking at heat spread on the PC board.
0.288 7.3
0.288 7.3
0.050 1.27
0.088 2.25
0.027 0.69 0.078 1.98
0.088 2.25
0.2 5.07
Figure 2. Dual MOSFET SO-8 Pad Pattern With Copper Spreading
The minimum recommended pad patterns for the single-MOSFET SO-8 with copper spreading (Figure 1) and dual-MOSFET SO-8 with copper spreading (Figure 2) show the starting point for utilizing the board area available for the heat-spreading copper. To create this pattern, a plane of copper overlies the drain pins. The copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat from the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. These patterns use all the available area underneath the body for this purpose. Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, “thermal” connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device.
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APPLICATION NOTE
0.050 1.27 0.196 5.0 0.027 0.69 0.078 1.98 0.2 5.07
Figure 1. Single MOSFET SO-8 Pad Pattern With Copper Spreading
Document Number: 70740 Revision: 18-Jun-07
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172 (4.369) 0.028 (0.711)
(6.248)
0.022 (0.559)
0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
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(1.194)
0.047
(3.861)
0.246
0.152
Document Number: 72606 Revision: 21-Jan-08
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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