SI4505DY

Si4505DY New Product Vishay Siliconix N- and P-Channel MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 FEATURES rDS(on) (W) 0.018 @ VGS = 10 V 0.027 @ VGS = 4.5 V 0.042 @ VGS = –4.5 V 0.060 @ VGS = –2.5 V ID (A) 7.8 6.4 –5.0 –4.0 D TrenchFETr Power MOSFET APPLICATIONS D Level Shift D Load Switch P-Channel –8 D1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 S1 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C P-Channel 10 sec. Steady State –8 "8 V –3.8 –3.0 –30 A 1.0 1.2 0.75 W _C Symbol VDS VGS 10 sec. Steady State 30 "20 Unit 7.8 ID IDM IS PD TJ, Tstg 1.8 2 1.3 6.0 30 6.0 5.2 –5.0 –3.6 1.0 1.20 0.75 –1.8 2 1.3 –55 to 150 THERMAL RESISTANCE RATINGS N-Channel Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board. b. t v 10 sec Document Number: 71826 S-20829—Rev. A, 17-Jun-02 www.vishay.com Steady-State Steady-State RthJA RthJF P- Channel Typ 50 85 30 Symbol Typ 50 85 30 Max 62.5 105 40 Max 62.5 105 40 Unit _C/W 1 Si4505DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = 0 V, VGS = "8 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = –6.4 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS = –6.4 V, VGS = 0 V, TJ = 55_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VDS = –5 V, VGS = –4.5 V VGS = 10 V, ID = 7.8 A Drain-Source On-State Resistanceb rDS(on) VGS = –4.5 V, ID = –5.0 A VGS = 4.5 V, ID = 6.4 A VGS = –2.5 V, ID = –4.0 A Forward Transconductanceb gfs VDS = 15 V, ID = 7.8 A VDS = –15 V, ID = –5.0 A IS = 1.8 A, VGS = 0 V IS = –1.8 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 –20 0.015 0.030 0.022 0.048 18 12 0.73 –0.75 1.1 –1.1 V S 0.018 0.042 0.027 0.060 W A 0.8 –0.45 1.8 1.0 "100 "100 1 –1 5 –5 mA V Symbol Test Condition Min Typa Max Unit Gate-Body Leakage IGSS nA Diode Forward Voltageb VSD Dynamica Total Gate Charge Qg N-Channel VDS = 15 V, VGS = 5 V, ID = 7.8 A Gate-Source Charge Qgs P-Channel VDS = –4 V, VGS = –5 V, ID = –5.0 A Gate-Drain Charge Qgd N-Ch P-Ch N-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = –4 V, RL = 4 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IF = 1.8 A, di/dt = 100 A/ms N-Ch P-Ch 11.5 13.5 3 2.2 4 3 15 21 8 45 35 60 10 55 30 50 25 40 15 70 55 100 20 85 60 100 ns nC 20 20 Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 71826 S-20829—Rev. A, 17-Jun-02 Si4505DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 5 V 4V 32 I D – Drain Current (A) I D – Drain Current (A) 32 40 TC = –55_C 25_C Vishay Siliconix N−CHANNEL Transfer Characteristics 24 24 125_C 16 3V 8 16 8 0 0 2 4 6 8 10 0 0 1 2 3 4 5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 2000 Capacitance r DS(on)– On-Resistance ( W ) 0.04 C – Capacitance (pF) 1600 Ciss 1200 0.03 VGS = 4.5 V 0.02 VGS = 10 V 800 Coss 400 Crss 0.01 0.00 0 6 12 18 24 30 0 0 6 12 18 24 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 6 1.6 On-Resistance vs. Junction Temperature V GS – Gate-to-Source Voltage (V) 5 4 r DS(on)– On-Resistance ( W ) (Normalized) VDS = 15 V ID = 7.8 A 1.4 VGS = 10 V ID = 7.8 A 1.2 3 1.0 2 1 0.8 0 0 3 6 9 12 15 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 71826 S-20829—Rev. A, 17-Jun-02 www.vishay.com 3 Si4505DY Vishay Siliconix New Product N−CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 100 r DS(on) – On-Resistance ( W ) 0.08 I S – Source Current (A) TJ = 150_C 10 0.06 ID = 7.8 A 0.04 TJ = 25_C 0.02 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 80 100 Single Pulse Power, Junction-to-Ambient 0.2 V GS(th) Variance (V) –0.0 Power (W) 60 –0.2 40 –0.4 20 –0.6 –0.8 –50 0 –25 0 25 50 75 100 125 150 0.001 0.01 0.01 0.1 Time (sec) 1 10 TJ – Temperature (_C) Safe Operating Area 100 Limited by rDS(on) 10 I D – Drain Current (A) 1 mS 1 TA = 25_C Single Pulse 10 mS 0.1 100 mS 1S 10 S dc 0.01 0.1 1 10 VDS – Drain-to-Source Voltage (V) 100 www.vishay.com 4 Document Number: 71826 S-20829—Rev. A, 17-Jun-02 Si4505DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Vishay Siliconix N−CHANNEL 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71826 S-20829—Rev. A, 17-Jun-02 www.vishay.com 5 Si4505DY Vishay Siliconix New Product P−CHANNEL Transfer Characteristics 30 TC = –55_C 24 3V 24 2.5 V 16 I D – Drain Current (A) 25_C TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 5 thru 3.5 V 32 I D – Drain Current (A) 18 125_C 12 8 2V 6 1.5 V 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 2000 Capacitance r DS(on)– On-Resistance ( W ) 0.08 C – Capacitance (pF) 1600 Ciss 0.06 VGS = 2.5 V 1200 Coss 800 Crss 400 0.04 VGS = 4.5 V 0.02 0.00 0 5 10 15 20 25 0 0 2 4 6 8 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 6 1.6 On-Resistance vs. Junction Temperature V GS – Gate-to-Source Voltage (V) 5 4 r DS(on)– On-Resistance ( W ) (Normalized) VDS = –4 V ID = 5 A 1.4 VGS = 4.5 V ID = 5 A 1.2 3 1.0 2 1 0.8 0 0 3 6 9 12 15 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) www.vishay.com 6 Document Number: 71826 S-20829—Rev. A, 17-Jun-02 Si4505DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.20 Vishay Siliconix P−CHANNEL On-Resistance vs. Gate-to-Source Voltage r DS(on) – On-Resistance ( W ) 10 I S – Source Current (A) 0.15 TJ = 150_C 0.10 ID = 5 A 0.05 TJ = 25_C 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 1 2 3 4 5 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 80 100 Single Pulse Power, Junction-to-Ambient 0.3 V GS(th) Variance (V) 0.2 Power (W) 60 0.1 40 0.0 20 –0.1 –0.2 –50 0 –25 0 25 50 75 100 125 150 0.001 0.01 0.01 0.1 Time (sec) 1 10 TJ – Temperature (_C) Safe Operating Area 100 Limited by rDS(on) 10 I D – Drain Current (A) 1 mS 10 mS 1 100 mS TA = 25_C Single Pulse 1S 10 S dc 0.1 0.01 0.1 1 VDS – Drain-to-Source Voltage (V) 10 Document Number: 71826 S-20829—Rev. A, 17-Jun-02 www.vishay.com 7 Si4505DY Vishay Siliconix New Product P−CHANNEL TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 8 Document Number: 71826 S-20829—Rev. A, 17-Jun-02