Si4511DY
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel N Channel P-Channel P Channel 20 −20
FEATURES
rDS(on) (W)
0.0145 @ VGS = 10 V 0.017 @ VGS = 4.5 V 0.033 @ VGS = −4.5 V 0.050 @ VGS = −2.5 V
ID (A)
9.6 8.6 −6.2 −5
D TrenchFETr Power MOSFET
APPLICATIONS
D Level Shift D Load Switch
D1
S2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4511DY Si4511DY-T1 (with Tape and Reel) Si4511DY—E3 (Lead (Pb)-Free) Si4511DY-T1—E3 (Lead (Pb)-Free with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 S1 D2 G1 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
P-Channel 10 sec. Steady State
−20 "12
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 sec.
Steady State
20 "16
Unit
V
9.6 7.7 40 1.7 2 1.3
7.2 5.8 0.9 1.1 0.7
−6.2 −4.9 −40 −1.7 2 1.3 −55 to 150
−4.6 −3.7 0.9 1.1 0.7 W _C A
THERMAL RESISTANCE RATINGS
N-Channel Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board. b. t v 10 sec Document Number: 72223 S-41496—Rev. B, 09-Aug-04 www.vishay.com t v 10 sec Steady-State Steady-State
P- Channel Typ
50 90 30
Symbol
RthJA RthJF
Typ
50 85 30
Max
62.5 110 40
Max
62.5 110 35
Unit
_C/W
1
Si4511DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage VGS( h) GS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "16 V VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = −16 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = −16 V, VGS = 0 V, TJ = 55_C On-State On State Drain Currentb ID( ) D(on) VDS = 5 V, VGS = 10 V VDS = −5 V, VGS = −4.5 V VGS = 10 V, ID = 9.6 A Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = −4.5 V, ID = −6.2 A VGS = 4.5 V, ID = 8.6 A VGS = −2.5 V, ID = −5 A Forward Transconductanceb gf fs VSD VDS = 15 V, ID = 9.6 A VDS = −15 V, ID = −6.2 A IS = 1.7 A, VGS = 0 V IS = −1.7 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 40 −40 0.0115 0.022 0.0135 0.035 33 17 0.8 −0.8 1.2 −1.2 0.0145 0.033 0.017 0.050 S W 0.6 −0.6 1.8 1.4 "100 "100 1 −1 5 −5 A mA V
Symbol
Test Condition
Min
Typa
Max
Unit
Gate-Body Gate Body Leakage
nA
Diode Forward Voltageb
V
Dynamica
Total Gate Charge Qg Qgs Qgd d td( ) d(on) tr td( ff) d(off) tf trr IF = 1.7 A, di/dt = 100 A/ms IF = −1.7 A, di/dt = 100 A/ms N-Channel N Ch l VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W P-Channel VDD = −10 V, RL = 10 W V 10 ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W 4.5 N-Channel N-Channel VDS = 10 V, VGS = 4.5 V, ID = 9.6 A P-Channel VDS = −10 V, VGS = −4 5 V ID = −6 2 A V 4.5 V, 6.2 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 11.5 17 3.7 4.1 3.3 4.3 12 25 12 30 55 70 15 50 50 40 20 40 20 45 85 105 25 75 100 80 ns 18 20 nC
Gate-Source Gate Source Charge
Gate-Drain Gate Drain Charge
Turn-On Turn On Delay Time
Rise Time
Turn-Off Turn Off Delay Time
Fall Time
Source-Drain Source Drain Reverse Recovery Time
Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
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Document Number: 72223 S-41496—Rev. B, 09-Aug-04
Si4511DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40 VGS = 10 thru 4 V 32 I D − Drain Current (A) I D − Drain Current (A) 3V 32 40
N−CHANNEL
Transfer Characteristics
24
24
16
16 TC = 125_C 8 25_C −55_C
8 2V 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS − Drain-to-Source Voltage (V)
VGS − Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.020 2000
Capacitance
r DS(on)− On-Resistance ( W )
VGS = 10 V 0.010
C − Capacitance (pF)
0.015
1600 VGS = 4.5 V
Ciss
1200
800 Crss
Coss
0.005
400
0.000 0 8 16 24 32 40 ID − Drain Current (A)
0 0 4 8 12 16 20 VDS − Drain-to-Source Voltage (V)
10
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V GS − Gate-to-Source Voltage (V)
8
6
rDS(on) − On-Resiistance (Normalized)
VDS = 10 V ID = 9.6 A
1.4
VGS = 10 V ID = 9.6 A
1.2
4
1.0
2
0.8
0 0 3 6 9 12 15 18 21 24
0.6 −50
−25
0
25
50
75
100
125
150
Qg − Total Gate Charge (nC)
TJ − Junction Temperature (_C)
Document Number: 72223 S-41496—Rev. B, 09-Aug-04
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Si4511DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
40 0.05
N−CHANNEL
On-Resistance vs. Gate-to-Source Voltage
r DS(on) − On-Resistance ( W )
0.04 ID = 9.6 A 0.03 ID = 3 A 0.02
I S − Source Current (A)
10 TJ = 150_C
TJ = 25_C
0.01
1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD − Source-to-Drain Voltage (V)
0.00 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V)
Threshold Voltage
0.4 0.2 V GS(th) Variance (V) −0.0 Power (W) −0.2 −0.4 −0.6 −0.8 −50 ID = 250 mA 30 25 20
Single Pulse Power
15 10
5 0 10−2
−25
0
25
50
75
100
125
150
10−1
1 Time (sec)
10
100
600
TJ − Temperature (_C)
100
Safe Operating Area
rDS(on) Limited IDM Limited P(t) = 0.0001
10 I D − Drain Current (A) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 TC = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) P(t) = 1 P(t) = 10 dc
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Document Number: 72223 S-41496—Rev. B, 09-Aug-04
Si4511DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2 1 Normalized Effective Transient Thermal Impedance
N−CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1
Notes: PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 85_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
2 1 Normalized Effective Transient Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Foot
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40 VGS = 5 thru 3.5 V 32 I D − Drain Current (A) I D − Drain Current (A) 3V 32 40
P-CHANNEL
Transfer Characteristics
TC = −55_C 25_C
24
2.5 V
24
125_C
16 2V 8 1.5 V 0 0.0 0.4 0.8 1.2 1.6 2.0
16
8
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS − Drain-to-Source Voltage (V) Document Number: 72223 S-41496—Rev. B, 09-Aug-04
VGS − Gate-to-Source Voltage (V) www.vishay.com
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Si4511DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10 r DS(on) − On-Resistance ( W ) 3000 2500 C − Capacitance (pF) 2000 1500 1000 500 Crss 0.00 0 8 16 24 32 40 0 0 4 8 12 16 20
P-CHANNEL
Capacitance
0.08
Ciss
0.06 VGS = 4.5 V 0.04 VGS = 2.5 V 0.02
Coss
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
Gate Charge
5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 6.2 A 4 1.6
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 6.2 A 1.4
3
r DS(on) − On-Resistance (W ) (Normalized) 6 9 12 15 18
1.2
2
1.0
1
0.8
0 0 3 Qg − Total Gate Charge (nC)
0.6 −50
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
40 0.10
On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C 10
r DS(on) − On-Resistance ( W )
0.08
I S − Source Current (A)
0.06 ID = 6.2 A 0.04
TJ = 25_C
0.02
1 0.0
0.00 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
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Document Number: 72223 S-41496—Rev. B, 09-Aug-04
Si4511DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
P-CHANNEL
Single Pulse Power
30 25 20
Threshold Voltage
0.4 VGS(th) Variance (V) ID = 250 mA
Power (W)
0.2
15 10
0.0
−0.2
5
−0.4 −50
−25
0
25
50
75
100
125
150
0 10−2
10−1
1 Time (sec)
10
100
600
TJ − Temperature (_C)
100
Safe Operating Area
rDS(on) Limited IDM Limited
10 I D − Drain Current (A) P(t) = 0.001 P(t) = 0.01 1 ID(on) Limited TC = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) P(t) = 0.1 P(t) = 1 P(t) = 10 dc
0.1
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1
Notes: PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 85_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
Document Number: 72223 S-41496—Rev. B, 09-Aug-04
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Si4511DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1
P-CHANNEL
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10
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Document Number: 72223 S-41496—Rev. B, 09-Aug-04
