Si4564DY
Vishay Siliconix
N- and P-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel P-Channel 40 - 40 RDS(on) (Ω) 0.0175 at VGS = 10 V 0.020 at VGS = 4.5 V 0.021 at VGS = - 10 V 0.028 at VGS = - 4.5 V ID (A)a Qg (Typ.) 10 9.2 - 9.2 - 7.4 9.8 21.7
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook PCs
D1 S2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4564DY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 D1 D1 D2 D2 G1
G2
S1 N-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD TC = 25 °C TA = 25 °C IDM IS ISM IAS EAS ID Symbol VDS VGS N-Channel 40 ± 16 10 8 8.0
b, c b, c
P-Channel - 40 ± 20 - 9.2 - 7.4 - 7.2b, c - 5.8b, c - 40 - 2.6 - 1.6b, c - 40 - 20 20 3.2 2.1 2b, c 1.28b, c
Unit V
6.2 40
A
2.6 1.6b, c 40 10 5 3.1 2 2
b, c
mJ
W
1.28b, c - 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typ. 50 30 Max. 62.5 40 P-Channel Typ. 47 29 Max. 62.5 38 Unit °C/W
Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel). Document Number: 65922 S10-0455-Rev. B, 22-Feb-10 www.vishay.com 1
Si4564DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = - 250 µA ID = 250 µA ID = - 250 µA ID = 250 µA ID = - 250 µA VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 16 V VDS = 0 V, VGS = ± 20 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55 °C VDS = - 40 V, VGS = 0 V, TJ = 55 °C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VDS = - 5 V, VGS = - 10 V VGS = 10 V, ID = 8 A Drain-Source On-State Resistanceb RDS(on) VGS = - 10 V, ID = - 8 A VGS = 4.5 V, ID = 5 A VGS = - 4.5 V, ID = - 5 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss P-Channel VDS = - 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 10 A Total Gate Charge Qg VDS = - 20 V, VGS = - 10 V, ID = - 10 A N-Channel VDS = 20 V, VGS = 4.5 V, ID = 10 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg P-Channel VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A f = 1 MHz N-Ch N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.3 1.3 855 2000 120 240 48 202 20.5 41.5 9.8 21.7 2.6 5.6 2.6 9.8 1.5 6.4 3.0 12.8 Ω 31 63 15 33 nC pF gfs VDS = 15 V, ID = 8 A VDS = - 15 V, ID = - 8 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 - 20 0.0145 0.0175 0.0175 0.017 0.0232 27 25 0.021 0.020 0.028 S Ω 0.8 - 1.2 40 - 40 40 - 34 - 4.1 5.0 2.0 - 2.5 ± 100 ± 100 1 -1 10 - 10 A µA V nA mV/°C V Symbol Test Conditions Min. Typ.a Max. Unit
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Document Number: 65922 S10-0455-Rev. B, 22-Feb-10
Si4564DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time
a
Symbol
Test Conditions N-Ch N-Channel VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω P-Channel VDD = - 20 V, RL = 2 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = - 20 V, RL = 2 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IS = 2 A IS = - 2 A N-Ch P-Ch N-Ch P-Ch N-Channel IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C P-Channel IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
Min.
Typ.a 7 9 10 9 18 50 9 14 11 42 15 40 23 40 13 15
Max. 14 18 20 18 36 90 18 28 22 75 30 70 46 70 26 30 2.6 - 2.6 40 - 40
Unit
td(on) tr td(off) tf td(on) tr td(off) tf
ns
IS ISM VSD trr Qrr ta tb
TC = 25 °C
A
0.74 - 0.77 17 30 10 26 10 15 7 15
1.2 - 1.2 34 60 20 52
V ns nC
ns
Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Document Number: 65922 S10-0455-Rev. B, 22-Feb-10
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Si4564DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40 V GS = 10 V thru 4 V 32 I D - Drain Current (A) I D - Drain Current (A) V GS = 3 V 24 8 10
6 T C = 25 °C 4
16
8 V GS = 2 V 0 0.0
2 T C = 125 °C 0 0.0 T C = - 55 °C 0.6 1.2 1.8 2.4 3.0
0.5
1.0
1.5
2.0
2.5
V DS - Drain-to-Source Voltage (V)
V GS - Gate-to-Source Voltage (V)
Output Characteristics
0.025 1200
Transfer Characteristics
R DS(on) - On-Resistance (Ω)
0.022 C - Capacitance (pF)
960
Ciss
0.019 V GS = 4.5 V 0.016
720
V GS = 10 V
480
0.013
240 Crss
Coss
0.010 0 10 20 30 40 50
0 0 8 16 24 32 40
ID - Drain Current (A)
V DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10 ID = 10 A VGS - Gate-to-Source Voltage (V) 8 V DS = 10 V 6 V DS = 20 V 4 V DS = 30 V R DS(on) - On-Resistance 1.7 2.0 ID = 8 A
Capacitance
V GS = 10 V
(Normalized)
1.4 V GS = 4.5 V 1.1
2
0.8
0 0.0
4.4
8.8
13.2
17.6
22.0
0.5 - 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
T J - Junction Temperature (°C)
Gate Charge www.vishay.com 4
On-Resistance vs. Junction Temperature Document Number: 65922 S10-0455-Rev. B, 22-Feb-10
Si4564DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.10 ID = 8 A R DS(on) - On-Resistance (Ω) 10 I S - Source Current (A) T J = 150 °C 1 T J = 25 °C 0.1 0.08
0.06
0.04 T J = 125 °C 0.02 T J = 25 °C
0.01
0.001 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10
V SD - Source-to-Drain Voltage (V)
V GS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4 60
On-Resistance vs. Gate-to-Source Voltage
0.2 VGS(th) Variance (V)
48
- 0.2
Power (W)
0
36
ID = 5 mA ID = 250 μA
24
- 0.4
12
- 0.6 - 50
- 25
0
25
50
75
100
125
150
0 0.001
0.01
0.1 Time (s)
1
10
T J - Temperature (°C)
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
10 I D - Drain Current (A)
Limited by R DS(on)*
1
1 ms 10 ms 100 ms
0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.01 0.1 1 10
1s 10 s DC
100
V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient Document Number: 65922 S10-0455-Rev. B, 22-Feb-10 www.vishay.com 5
Si4564DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
11.0
8.8 I D - Drain Current (A)
6.6
4.4
2.2
0.0 0 25 50 75 100 125 150
T C - Case Temperature (°C)
Current Derating*
4.0 1.5
3.2
1.2
Power (W)
1.6
Power (W) 0 25 50 75 100 125 150
2.4
0.9
0.6
0.8
0.3
0.0
0.0 0 25 50 75 100 125 150
T C - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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Document Number: 65922 S10-0455-Rev. B, 22-Feb-10
Si4564DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1
PDM Notes:
0.05
t1 t2 1. Duty Cycle, D = t1 t2
0.02
2. Per Unit Base = R thJA = 120 °C/W 3. T JM - T A = PDMZthJA(t)
0.01 10 -4
Single Pulse 10 -3 10 -2 10 -1 1 10
4. Surface Mounted
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2
0.1 0.1 0.05 0.02
0.01 10 -4
Single Pulse 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 65922 S10-0455-Rev. B, 22-Feb-10
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Si4564DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40 10
32
ID - Drain Current (A)
VGS = 10 V thru 4 V ID - Drain Current (A)
8
24
6
TC = 25 °C
16
3V
4
8
2
TC = 125 °C
TC = - 55 °C
0 0 0.5 1.0 1.5 2.0 2.5
0 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.035 3100
Transfer Characteristics
0.031
RDS(on) - On-Resistance (Ω) C - Capacitance (pF)
2480
Ciss
0.027
VGS = 4.5 V
1860
0.023
1240
0.019
VGS = 10 V
620
Crss
Coss
0.015 0 8 16 24 32 40
0 0 8 16 24 32 40
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10 ID = 10 A VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V 6 VDS = 20 V RDS(on) - On-Resistance (Normalized)
Capacitance
1.8
ID = 8 A
1.6
VGS = 10 V
1.4
VGS = 4.5 V
1.2
4 VDS = 30 V 2
1.0
0.8
0
0
9
18
27
36
45
0.6 - 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge
TJ - Junction Temperature (°C)
Gate Charge www.vishay.com 8
On-Resistance vs. Junction Temperature Document Number: 65922 S10-0455-Rev. B, 22-Feb-10
Si4564DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.10
ID = 8 A
10
TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A)
0.08
1
TJ = 25 °C
0.06
0.1
0.04
TJ = 125 °C
0.01
0.02
TJ = 25 °C
0.001 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.8 50
On-Resistance vs. Gate-to-Source Voltage
40 0.5
VGS(th) - Variance (V) ID = 250 μA Power (W)
30
0.2
ID = 5 mA
20
- 0.1 10
- 0.4 - 50
- 25
0
25
50
75
100
125
150
0 0.001
0.01
0.1
Time (s)
1
10
TJ - Junction Temperature (°C)
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
Limited by RDS(on)*
10
ID - Drain Current (A) 1 ms
1
10 ms 100 ms
0.1
TA = 25 °C Single Pulse BVDSS Limited
1s 10 s DC
0.01 0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient Document Number: 65922 S10-0455-Rev. B, 22-Feb-10 www.vishay.com 9
Si4564DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
11.0
8.8
ID - Drain Current (A)
6.6
4.4
2.2
0 0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
4.0 1.5
3.2
1.2
Power (W)
Power (W)
2.4
0.9
1.6
0.6
0.8
0.3
0 0 25 50 75 100 125 150
0 0 25 50 75 100 125 150
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
www.vishay.com 10
Document Number: 65922 S10-0455-Rev. B, 22-Feb-10
Si4564DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05
Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2
2. Per Unit Base = RthJA = 110 °C/W
0.02 0.01 10-4
Single Pulse
3. TJM - TA = PDMZthJA (t) 4. Surface Mounted
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1
0.05 0.02 Single Pulse 0.01 10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65922.
Document Number: 65922 S10-0455-Rev. B, 22-Feb-10
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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