SI4776DY

New Product Si4776DY Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. 0.016 at VGS = 10 V 0.020 at VGS = 4.5 V ID (A)a 11.9 5.5 nC 10.6 Qg (Typ.) • Halogen-free According to IEC 61249-2-21 Definition • SkyFETMonolithic TrenchFETPower MOSFET and Schottky Diode • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D APPLICATIONS • Notebook System Power and Memory - Low Side D G N-Channel MOSFET Schottky Diode Ordering Information: Si4776DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 30 ± 20 11.9 9.5 9.3b, c 7.5b, c 50 3.7 2.3b, c 10 5 4.1 2.6 2.5b, c 1.6b, c - 55 to 150 W mJ A Unit V °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t  10 s Steady State Symbol RthJA RthJF Typ. 40 24 Max. 50 30 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 95 °C/W. Document Number: 63316 S11-1658-Rev. A, 15-Aug-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4776DY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On -State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0, ID = 1 mA VDS = VGS, ID= 1 mA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 100 °C VDS  5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 7 A VDS = 15 V, ID = 10 A Min. 30 1 Typ. Max. Unit 2.3 ± 100 0.013 1 0.150 10 V nA mA A 30 0.013 0.016 30 0.016 0.020  S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 521 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A f = 1 MHz VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  0.2 141 57 11.6 5.5 1.5 1.9 0.8 12 12 14 8 10 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  11 11 6 TC = 25 °C IS = 1 A 0.44 12 IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 4.5 6.5 5.5 1.6 24 24 28 16 20 22 22 12 3.7 50 0.55 24 9 ns  17.5 8.5 nC pF Drain-Source Body Diode and Schottky Characteristics A V ns nC ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 63316 S11-1658-Rev. A, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4776DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 VGS = 10 V thru 4 V 40 ID - Drain Current (A) ID - Drain Current (A) 8 10 30 6 TC = 25 °C 20 VGS = 3 V 4 10 VGS = 2 V 0 0.0 2 TC = 125 °C 0 TC = - 55 °C 0.5 1.0 1.5 2.0 2.5 0.0 1.0 2.0 3.0 4.0 5.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.020 700 Transfer Characteristics 0.018 RDS(on) - On-Resistance (Ω) 560 Ciss 0.016 C - Capacitance (pF) VGS = 4.5 V 420 0.014 280 Coss 140 Crss 0.012 VGS = 10 V 0.010 0 10 20 30 40 50 ID - Drain Current (A) 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 10 A Capacitance 1.8 ID = 10 A RDS(on) - On-Resistance (Normalized) 1.6 VGS = 10 V VGS - Gate-to-Source Voltage (V) 8 VDS = 15 V 6 VDS = 10 V 4 VDS = 20 V 1.4 VGS = 4.5 V 1.2 1.0 2 0.8 0 0 2 4 6 8 10 12 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 63316 S11-1658-Rev. A, 15-Aug-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4776DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.050 ID = 10 A 10 0.040 RDS(on) - On-Resistance (Ω) IS - Source Current (A) TJ = 150 °C TJ = 25 °C 1 0.030 TJ = 125 °C 0.020 TJ = 25 °C 0.010 0.1 0.01 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 VSD - Source-to-Drain Voltage (V) 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 Source-Drain Diode Forward Voltage 10-1 10-2 IR - Reverse Current (A) 150 On-Resistance vs. Gate-to-Source Voltage 30 V 120 10-3 -4 10 Power (W) 10 V 50 75 100 125 150 20 V 90 60 10-5 10-6 10-7 0 25 TJ - Temperature (°C) 30 0 0.001 0.01 0.1 Time (s) 1 10 Reverse Current (Schottky) 100 IDM Limited Single Pulse Power, Junction-to-Ambient 100 μs 10 ID Limited 1 ms 1 Limited by RDS(on)* 0.1 TC = 25 °C Single Pulse 0.01 0.01 10 ms 100 ms 1s 10 s BVDSS Limited DC ID - Drain Current (A) 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 63316 S11-1658-Rev. A, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4776DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 15 12 ID - Drain Current (A) 9 6 3 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 5 2.0 4 1.6 Power (W) 2 Power (W) 3 1.2 0.8 1 0.4 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 0.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63316 S11-1658-Rev. A, 15-Aug-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4776DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 95 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot ’Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63316. www.vishay.com 6 Document Number: 63316 S11-1658-Rev. A, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1