Si4804DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V
ID (A)
7.5 6.5
D1
D1
D2
D2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4804DY Si4804DY-T1 (with Tape and Reel) S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
30 "20 7.5 6.0 20 1.7 2.0 1.3
Steady State
Unit
V
5.7 4.6 A A W _C
0.9 1.1 0.7 −55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71088 S-31989—Rev. D, 13-Oct-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
52 93 35
Maximum
62.5 110 40
Unit
_C/W
1
Si4804DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 7.5 A VGS = 4.5 V, ID = 6.5 A VDS = 15 V, ID = 7.5 A IS = 1.7 A, VGS = 0 V 20 0.018 0.024 22 0.8 1.2 0.022 0.030 0.8 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 VDS = 15 V, VGS = 10 V, ID = 7.5 A 13 2 2.7 1.9 8 10 21 10 40 4 16 20 40 20 80 ns W 20 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 VGS = 10 thru 4 V 16 I D − Drain Current (A) I D − Drain Current (A) 3V 16 20
Transfer Characteristics
12
12
8
8 TC = 125_C 4 25_C −55_C
4
2V
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS − Drain-to-Source Voltage (V) www.vishay.com
VGS − Gate-to-Source Voltage (V) Document Number: 71088 S-31989—Rev. D, 13-Oct-03
2
Si4804DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.040 r DS(on) − On-Resistance ( W ) 1000
Capacitance
C − Capacitance (pF)
0.032 VGS = 4.5 V VGS = 10 V 0.016
800 Ciss 600
0.024
400 Coss 200 Crss
0.008
0.000 0 4 8 12 16 20
0 0 6 12 18 24 30
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
Gate Charge
10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 7.5 A 8 1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 7.5 A 1.4
6
r DS(on) − On-Resistance (W ) (Normalized) 6 9 12 15
1.2
4
1.0
2
0.8
0 0 3 Qg − Total Gate Charge (nC)
0.6 −50
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20 TJ = 150_C 0.04
On-Resistance vs. Gate-to-Source Voltage
I S − Source Current (A)
10
r DS(on) − On-Resistance ( W )
ID = 7.5 A 0.03
0.02
TJ = 25_C
0.01
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
Document Number: 71088 S-31989—Rev. D, 13-Oct-03
www.vishay.com
3
Si4804DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 0.2 V GS(th) Variance (V) ID = 250 mA −0.0 −0.2 −0.4 −0.6 −0.8 −50 10 Power (W) 30 50
Single Pulse Power
40
20
−25
0
25
50
75
100
125
150
0 10−3
10−2
10−1
1
10
100
600
TJ − Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec)
Notes: PDM t1 t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 93_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10
www.vishay.com
4
Document Number: 71088 S-31989—Rev. D, 13-Oct-03
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