SI4807DY

Si4807DY Vishay Siliconix P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) Gate 1 –30 Gate 2 rDS(ON) (W) 0.035 @ VGS = –10 V 0.054 @ VGS = –4.5 V 1.3 @ VGS = –10 V 2.2 @ VGS = –4.5 V ID (A) "6 "4.8 "0.9 "0.7 D SO-8 G2 G1 S S 1 2 3 4 Top View S P-Channel MOSFET 8 7 6 5 NC D D D G2 G1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID "4.8 IDM IS PD TJ, Tstg "30 –1.25 2.3 W 1.0 –55 to 150 _C "0.7 "1.5 A Symbol VDS VGS Gate 1 –30 "20 "6 Gate 2 Unit V "0.9 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70643 S-00652—Rev. E, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 55 Unit _C/W 2-1 Si4807DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) rDS1( ) DS1(on) Drain-Source On State R i Drain Source On-State Resistancea DiS OS rDS2(on) Forward Transconductancea gfs VSD VG1S = 0 V, VG2S = –10 V, ID = –0.15 A VG1S = 0 V, VG2S = –4.5 V, ID = –0.1 A VDS = –15 V, ID = –6 A IS = –1.25 A, VGS = 0 V VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –30 V, VGS = 0 V VDS = –30 V, VGS = 0 V, TJ = 55_C (G1 = G2) VDS = –5 V, VGS = –10 V (G1 = G2) VGS = –10 V, ID = –6 A (G1 = G2) VGS = –4.5 V, ID = –4.8 A –20 0.028 0.041 1.05 1.65 13 0.7 –1.1 0.035 0.054 1.3 2.2 S V W –1 "100 –1 –5 V nA mA A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Gate 1 Total Gate Charge Gate Charge Qg Gate 1 G VDS = –15 V, VGS(1 2) = –10 V –15 GS(1, ID = –6 A Gate 2 VDS = –15 V, VGS(1) = –0 V VGS(2) = –10 V, ID = –0.15 A Gate 2 Gate 1 Gate 2 Gate 1 Gate 2 34 2.0 6.5 C nC 0.5 6.0 0.2 15 VDD = –15 V, RL = 15 W V, 15 ID ^ –1 A, VGEN = –10 V RG = 6 W A V, 11 52 20 IF = –1.25 A, di/dt = –100 A/ms 30 25 20 80 35 60 ns 60 5 Gate-Source Charge Charge Qgs Gate-Drain Charge Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qgd td(on) tr td(off) tf trr Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70643 S-00652—Rev. E, 27-Mar-00 Si4807DY Vishay Siliconix TYPICAL CHARACTERISTICS (VG1 = VG2, 25_C UNLESS NOTED) Output Characteristics 30 VGS = 10, 9, 8, 7, 6, 5 V 25 25 30 Transfer Characteristics I D – Drain Current (A) 20 I D – Drain Current (A) 4V 20 15 15 10 2, 1 V 3V 10 TC = 125_C 25_C –55_C 3 4 5 5 5 0 0 2 4 6 8 10 VDS – Drain-to-Source Voltage (V) 0 0 1 2 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.15 3500 3000 r DS(on) – On-Resistance ( W ) 0.12 C – Capacitance (pF) 2500 2000 1500 1000 Ciss Capacitance 0.09 0.06 VGS = 4.5 V VGS = 10 V 0.03 500 0 0 6 12 18 24 30 ID – Drain Current (A) 0 0 Crss 5 Coss 10 15 20 25 30 VDS – Drain-to-Source Voltage (V) 10 VDS = 15 V ID = 6 A V GS – Gate-to-Source Voltage (V) Gate Charge 1.8 1.6 r DS(on) – On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 –50 On-Resistance vs. Junction Temperature VG1S = 10 V ID = 6 A 8 6 4 2 0 0 5 10 15 20 25 30 35 Qg – Total Gate Charge (nC) 0 50 100 150 TJ – Junction Temperature (_C) Document Number: 70643 S-00652—Rev. E, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 2-3 Si4807DY Vishay Siliconix TYPICAL CHARACTERISTICS (VG1 = VG2, 25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.15 On-Resistance vs. Gate-to-Source Voltage 10 I S – Source Current (A) r DS(on) – On-Resistance ( W ) 0.12 TJ = 150_C 0.09 0.06 ID = 6 A 0.03 TJ = 25_C 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) Threshold Voltage 0.8 0.6 0.4 0.2 –0.0 –0.2 –0.4 –0.6 –50 10 ID = 250 mA 40 Power (W) 60 50 VGS – Gate-to-Source Voltage (V) Single Pulse Power TC = 25_C Single Pulse V GS(th) Variance (V) 30 20 0 0 50 TJ – Temperature (_C) 100 150 0.01 0.1 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 55_C/W 3. TJM – TA = PDMZthJA(t) 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70643 S-00652—Rev. E, 27-Mar-00 Si4807DY Vishay Siliconix TYPICAL CHARACTERISTICS (VG1 = 0 V, 25_C UNLESS NOTED) Output Characteristics 4.0 3.5 3.0 I D – Drain Current (A) 2.5 2.0 6V 1.5 1.0 0.5 0 0 2 4 6 8 10 3, 2, 1 V 5V 4V 8V VG2S = 10 V 9V r DS(on) – On-Resistance ( W ) 8 10 On-Resistance vs. Drain Current 7V 6 4 VG2S = 4.5 V 2 VG2S = 10 V 0 0 0.2 0.4 0.6 0.8 1.0 VDS – Drain-to-Source Voltage (V) 10 ID – Drain Current (A) Gate Charge 10 On-Resistance vs. Gate-to-Source Voltage V G2S – Gate-to-Source Voltage (V) VDS = 15 V ID = 150 mA 6 r DS(on) – On-Resistance ( W ) 8 8 6 4 4 ID = 150 mA 2 2 0 0 0.4 0.8 1.2 1.6 2.0 0 0 2 4 6 8 10 Qg – Total Gate Charge (nC) VG2S – Gate-to-Source Voltage (V) Document Number: 70643 S-00652—Rev. E, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 2-5