SI4810DY

Si4810DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0135 @ VGS = 10 V 0.020 @ VGS = 4.5 V ID (A) 10 8 SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.53 V @ 3.0 A IF (A) 4.0 DD DD SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D Ordering Information: Si4810DY Si4810DY-T1 (with Tape and Reel) G N-Channel MOSFET SS S Schottky Diode ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) a, Continuous Drain Current Continuous Drain Current (TJ = 150_C) (MOSFET)a, b Symbol VDS VGS TA = 25_C TA = 70_C ID IDM IS IF IFM TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD Limit 30 30 "20 10 8 50 2.3 4.0 50 2.5 1.6 2.0 1.3 - 55 to 150 Unit V Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a, b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range A W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambient (t v 10 sec)a ti t A bi t 10 ) Device MOSFET Schottky MOSFET Symbol Typical Maximum 50 60 Unit RthJA 70 80 _C/W Maximum Junction to Ambient (t = steady state)a Junction-to-Ambient Schottky Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70802 S-31062—Rev. F, 26-May-03 www.vishay.com 2-1 Si4810DY Vishay Siliconix MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current (MOSFET Schottky) (MOSFET + Schottky) On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Schottky Diode Forward Voltagea IDSS VDS = 30 V, VGS = 0 V, TJ = 100_C VDS = 30 V, VGS = 0 V, TJ = 125_C ID(on) rDS(on) gfs VSD VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 5 A VDS = 15 V, ID = 10 A IS = 3.0 A, VGS = 0 V IS = 3.0 A, VGS = 0 V, TJ = 125_C 20 0.0105 0.0155 28 0.485 0.420 0.53 0.47 V 0.0135 0.020 W S 0.007 1.5 6.5 1 "100 0.100 10 20 A mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3.0 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 VDS = 15 V, VGS = 5 V, ID = 10 A 20 8 7 1.0 15 8 45 18 36 1.6 30 15 90 40 70 ns W 30 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2-2 Document Number: 70802 S-31062—Rev. F, 26-May-03 Si4810DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 5 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Transfer Characteristics 30 4V 30 20 20 TC = 125_C 10 10 3V 0 0 1 2 3 4 5 25_C 0 0 1 2 3 - 55_C 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 r DS(on) - On-Resistance ( W ) 3500 Capacitance C - Capacitance (pF) 0.04 2800 Ciss (MOSFET) 0.03 2100 0.02 VGS = 4.5 V VGS = 10 V 1400 Coss (MOSFET + Schottky) 0.01 700 Crss (MOSFET) 0.00 0 10 20 30 40 50 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) r DS(on) - On-Resistance ( W ) (Normalized) VDS = 15 V ID = 10 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 10 A 1.4 6 1.2 4 1.0 2 0.8 0 0 8 16 24 32 40 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 70802 S-31062—Rev. F, 26-May-03 www.vishay.com 2-3 Si4810DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 50 0.10 On-Resistance vs. Gate-to-Source Voltage 10 TJ = 150_C TJ = 25_C r DS(on) - On-Resistance ( W ) 0.08 I S - Source Current (A) 0.06 ID = 9.0 A 1 0.04 0.02 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.00 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Reverse Current (Schottky) 30 10 I R - Reverse Curent (mA) 60 30 V 0.1 10 V 0.01 20 V 0.001 20 Power (W) 80 Single Pulse Power 1 40 0.0001 0 25 50 75 100 125 150 0 0.01 0.10 1.00 Time (sec) 10.00 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 www.vishay.com 2-4 Document Number: 70802 S-31062—Rev. F, 26-May-03 Si4810DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) Document Number: 70802 S-31062—Rev. F, 26-May-03 www.vishay.com 2-5