SI4812DY

Si4812DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.018 @ VGS = 10 V 0.028 @ VGS = 4.5 V FEATURES ID (A) 9 7.3 D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.50 V @ 1.0 A IF (A) 1.4 D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D Ordering Information: Si4812DY Si4812DY-T1 (with Tape and Reel) Si4812DY—E3 (Lead (Pb)-Free) Si4812DY-T1—E3 (Lead (Pb)-Free with Tape and Reel) Schottky Diode G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Limit Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) a, Continuous Drain Current Continuous Drain Current (TJ = 150_C) (MOSFET)a, b Symbol VDS VGS TA = 25_C TA = 70_C ID IDM IS IF IFM TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD 10 sec 30 30 "20 9 7.5 50 2.1 1.4 30 2.5 1.6 2.0 1.3 Steady State Unit V 6.9 5.6 1.2 0.8 1.4 0.9 1.2 0.8 −55 to 150 _C W A Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) a, Maximum Power Dissipation (MOSFET)a b a, Maximum Power Dissipation (Schottky)a b Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambient (t v 10 sec)a ti t A bi t 10 ) Device MOSFET Schottky MOSFET Schottky Symbol Typical 40 50 72 85 Maximum 50 60 90 100 Unit RthJA _C/W Maximum Junction to Ambient (t = steady state)a Junction-to-Ambient Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 71775 S-41426—Rev. G, 26-Jul-04 www.vishay.com 1 Si4812DY Vishay Siliconix MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current (MOSFET Schottky) (MOSFET + Schottky) On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Schottky Diode Forward Voltagea VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V IDSS ID(on) rDS(on) gfs VSD VDS = 30 V, VGS = 0 V, TJ = 100_C VDS = 30 V, VGS = 0 V, TJ = 125_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 9 A VGS = 4.5 V, ID = 7.3 A VDS = 15 V, ID = 9 A IS = 1.0 A, VGS = 0 V IS = 1.0 A, VGS = 0 V, TJ = 125_C 20 0.012 0.019 23 0.45 0.33 0.50 0.42 0.018 0.028 W S V 0.004 0.7 3.0 1 3 "100 0.100 10 20 A mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.0 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W 0.2 16 10 35 13 35 VDS = 15 V, VGS = 5 V, ID = 9 A 13 4 5.7 2.4 25 20 50 20 70 ns W 24 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71775 S-41426—Rev. G, 26-Jul-04 Si4812DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 50 Output Characteristics VGS = 10 thru 5 V 50 Transfer Characteristics 40 I D − Drain Current (A) 4V I D − Drain Current (A) 40 30 30 20 20 TC = 125_C 10 10 3V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 25_C 0 0 1 2 3 −55_C 4 5 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 1800 1500 C − Capacitance (pF) Capacitance r DS(on) − On-Resistance ( W ) 0.08 Ciss 1200 900 600 Crss 300 0 Coss 0.06 0.04 VGS = 4.5 V 0.02 VGS = 10 V 0.00 0 10 20 30 40 50 ID − Drain Current (A) 0 5 10 15 20 25 30 VDS − Drain-to-Source Voltage (V) 10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 9 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 9 A 8 1.4 rDS(on) − On-Resiistance (Normalized) 6 1.2 4 1.0 2 0.8 0 0 5 10 15 20 25 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Document Number: 71775 S-41426—Rev. G, 26-Jul-04 www.vishay.com 3 Si4812DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 50 Source-Drain Diode Forward Voltage 0.10 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) 10 r DS(on) − On-Resistance ( W ) TJ = 150_C 0.08 0.06 ID = 9.0 A 1 TJ = 25_C 0.04 0.02 0.1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Reverse Current (Schottky) 20 10 I R − Reverse Current (mA) 40 1 Power (W) 30 V 0.1 0.01 10 V 30 50 Single Pulse Power (MOSFET) 20 0.001 20 V 10 0.0001 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ − Junction Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 72_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 10 Square Wave Pulse Duration (sec) 100 600 www.vishay.com 4 Document Number: 71775 S-41426—Rev. G, 26-Jul-04 Si4812DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85_C/W Single Pulse 0.01 10−4 10−3 10−2 10−1 1 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) Document Number: 71775 S-41426—Rev. G, 26-Jul-04 www.vishay.com 5