SI4824DY

Si4824DY Vishay Siliconix Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) N-Channel 1 30 N-Channel 2 rDS(on) (W) 0.040 @ VGS = 10 V 0.065 @ VGS = 4.5 V 0.0175 @ VGS = 10 V 0.027 @ VGS = 4.5 V ID (A) "4.7 "3.7 "9 "7.3 D1 D2 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET 1 S2 N-Channel MOSFET 2 8 7 6 5 D1 D2 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage a, Continuous Drain Current (TJ = 150_C)a, b Drain Current Symbol VDS VGS TA = 25_C TA = 70_C ID IDM IS TA = 25_C TA = 70_C PD TJ, Tstg N-Channel 1 30 "20 "4.7 "3.7 "40 1.2 1.4 0.9 –55 to 150 N-Channel 2 30 "20 "9 "7.2 "60 2.0 2.25 1.5 –55 to 150 Unit V Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Power Dissipationa, Operating Junction and Storage Temperature Range A W _C THERMAL RESISTANCE RATINGS Parameter N-Ch 1 Maximum Junction-to-Ambient Maximum Junction-to-Ambienta i N-Ch 2 Notes a. Surface Mounted on FR4 Board. b. t v10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70800 S-56946—Rev. C, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 t v10 sec Steady State t v10 sec Steady State RthJA 80 125 55 Symbol Typical Maximum 90 Unit _C/W 2-1 Si4824DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V 20 N-Ch 1 N-Ch 2 N-Ch 1 N-Ch 2 N-Ch 1 VDS = 24 V, VGS = 0 V V, Zero Gate Voltage Drain Current Z Gate Voltage Drain Current l i IDSS VDS = 24 V, VGS = 0 V, TJ = 55_C V, N-Ch 2 N-Ch 1 N-Ch 2 N-Ch 1 N-Ch 2 N-Ch 1 N-Ch 2 N-Ch 1 N-Ch 2 N-Ch 1 N-Ch 2 N-Ch 1 N-Ch 2 20 A 30 0.033 0.014 0.048 0.020 12 S 25 0.7 0.7 1.2 V 1.2 0.040 0.0175 0.065 0.027 W 1.0 V 1.0 "100 "100 1 1 5 5 mA nA Symbol Test Condition Min Typ Max Unit Gate-Body Leakage Leakage IGSS On-State Drain Currenta Drain Current ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 4.7 A DiS i Drain-Source On-State Resistancea On S Resistance VGS = 10 V, ID = 9 A rDS(on) VGS = 4.5 V, ID = 3.7 A VGS = 4.5 V, ID = 7.3 A Forward Transconductancea Transconductance gfs VDS = 15 V, ID = 4.7 A VDS = 15 V, ID = 9 A IS = 1.2 A, VGS = 0 V IS = 2.0 A, VGS = 0 V Diode Forward Voltagea Forward Voltage VSD Dynamicb N-Ch 1 Total Gate Charge Gate Charge Qg N-Channel 1 N Ch l VDS = 15 V, VGS = 5 V, ID = 4.7 A 15 N-Channel 2 VDS = 15 V, VGS = 5 V, ID = 9 A N-Ch 2 N-Ch 1 N-Ch 2 N-Ch 1 Gate-Drain Charge Charge Qgd N-Ch 2 N-Ch 1 Turn-On Delay Time Delay Time td(on) N-Channel 1 N-Ch Channel l VDD = 15 V, RL =15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 10 N-Channel 2 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V RG = 6 W 10 V, N-Ch 2 N-Ch 1 N-Ch 2 N-Ch 1 N-Ch 2 N-Ch 1 Fall Time Time tf IF = 1.2 A, di/dt = 100 A/ms IF = 2.0 A, di/dt = 100 A/ms N-Ch 2 N-Ch 1 N-Ch 2 6.5 17.5 3.0 nC C 7.5 2.5 6.5 10 15 12 15 20 45 10 20 40 40 20 30 20 30 35 ns 70 20 35 80 80 10 27 Gate-Source Charge Charge Qgs Rise Time Time tr Turn-Off Delay Time Delay Time td(off) Source-Drain Reverse Recovery Time Reverse Recovery Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. For design aid only; not subject to production testing. trr www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70800 S-56946—Rev. C, 23-Nov-98 Si4824DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 6 V I D – Drain Current (A) I D – Drain Current (A) 30 5V 30 125_C 20 40 TC = –55_C 25_C N CHANNEL 1 Transfer Characteristics 20 4V 10 2V 0 0 1 2 3 4 10 3V 0 0 1 2 3 4 5 6 7 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 1200 Capacitance 0.08 r DS(on) – On-Resistance ( W ) VGS = 4.5 V 0.06 C – Capacitance (pF) 1000 Ciss 800 600 0.04 VGS = 10 V 400 Coss Crss 0.02 200 0 0 10 20 ID – Drain Current (A) 30 40 0 0 6 12 18 24 30 VDS – Drain-to-Source Voltage (V) 10 VDS = 15 V ID = 4.7 A Gate Charge 1.55 On-Resistance vs. Junction Temperature V GS – Gate-to-Source Voltage (V) 8 r DS(on) – On-Resistance ( W) (Normalized) 1.35 VGS = 10 V ID = 4.7 A 6 1.15 4 0.95 2 0 0 3 6 9 12 Qg – Total Gate Charge (nC) 0.75 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Document Number: 70800 S-56946—Rev. C, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-3 Si4824DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 40 0.10 N CHANNEL 1 On-Resistance vs. Gate-to-Source Voltage I S – Source Current (A) TJ = 150_C 10 TJ = 25_C r DS(on) – On-Resistance ( W ) 0.08 0.06 ID = 4.7 A 0.04 0.02 1 0 0.4 0.8 1.2 1.6 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.45 0.25 24 V GS(th) Variance (V) 0.05 –0.15 –0.35 –0.55 6 –0.75 –0.95 –50 0 –25 0 25 50 75 100 125 150 0.01 0.10 ID = 250 mA Power (W) 18 30 Single Pulse Power 12 1 Time (sec) 10 100 600 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Normalized Effective Transient Thermal Impedance 0.01 0.001 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70800 S-56946—Rev. C, 23-Nov-98 Si4824DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 60 N CHANNEL 2 Transfer Characteristics 50 VGS = 10 thru 5 V I D – Drain Current (A) 50 I D – Drain Current (A) 40 40 30 4V 30 20 20 TC = 125_C 10 25_C –55_C 3 4 5 6 10 2V 3V 0 0 1 2 3 4 0 0 1 2 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.040 3000 Capacitance 0.035 r DS(on) – On-Resistance ( W ) C – Capacitance (pF) 2300 Ciss 0.030 0.025 VGS = 4.5 V VGS = 10 V 1600 0.020 900 Crss 200 Coss 0.015 0.01 0 10 20 30 40 50 60 0 6 12 18 24 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 10 VDS = 15 V ID = 9 A V GS – Gate-to-Source Voltage (V) 8 Gate Charge 1.55 1.45 1.35 1.25 1.15 1.05 0.95 0.85 0.75 –50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 9 A 6 4 2 0 0 4 8 12 16 20 24 28 32 Qg – Total Gate Charge (nC) r DS(on) – On-Resistance ( W) (Normalized) –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Document Number: 70800 S-56946—Rev. C, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-5 Si4824DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 60 TJ = 150_C r DS(on) – On-Resistance ( W ) I S – Source Current (A) 0.03 ID = 4.7 A 0.02 0.04 N CHANNEL 2 On-Resistance vs. Gate-to-Source Voltage TJ = 25_C 10 0.01 1 0 0.4 0.8 1.2 1.6 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.50 50 Single Pulse Power 0.25 ID = 250 mA Power (W) 40 V GS(th) Variance (V) 0.00 30 –0.25 20 –0.50 10 –0.75 –1 –50 0 –25 0 25 50 75 100 125 150 0.01 0.10 1 Time (sec) 10 100 600 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Normalized Effective Transient Thermal Impedance 0.001 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 70800 S-56946—Rev. C, 23-Nov-98