SI4825DY

Si4825DY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –30 –30 0.022 @ VGS = –4.5 V –9.2 rDS(on) (W) 0.014 @ VGS = –10 V ID (A) –11.5 SSS SO-8 S S S G 1 2 3 4 Top View DDDD P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current C) Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID –9.2 IDM IS PD TJ, Tstg –2.5 3.0 1.9 –55 to 150 –50 –1.3 1.5 W 0.9 _C –6.5 A Symbol VDS VGS 10 secs Steady State –30 "25 Unit V –11.5 –8.1 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71291 S-10679—Rev. A, 31-Jul-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 32 68 15 Maximum 42 85 18 Unit _C/W 1 Si4825DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea On Resistance Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "25 V VDS = –24 V, VGS = 0 V VDS = –24 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –10 V VGS = –10 V, ID = –11.5 A VGS = –4.5 V, ID = –9.2 A VDS = –15 V, ID = –11.5 A IS = –2.5 A, VGS = 0 V –50 0.012 0.018 28 –0.8 –1.2 0.014 0.022 –1.0 "100 –1 –5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –2.5 A, di/dt = 100 A/ms VDD = –15 V, RL = 15 W V, 15 ID ^ –1 A, VGEN = –10 V RG = 6 W A V, VDS = –15 V VGS = –10 V ID = –11 5 A V, V, 11.5 55 15.5 7.5 15 13 97 51 45 25 20 150 75 80 ns 71 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 5 V 4V 40 I D – Drain Current (A) I D – Drain Current (A) 40 50 Transfer Characteristics 30 30 20 3V 10 20 TC = 125_C 25_C –55_C 2 3 4 5 10 0 0 1 2 3 4 5 0 0 1 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 2 Document Number: 71291 S-10679—Rev. A, 31-Jul-00 Si4825DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.025 r DS(on) – On-Resistance ( W ) 5000 Vishay Siliconix Capacitance 0.015 VGS = 10 V 0.010 C – Capacitance (pF) 0.020 VGS = 4.5 V 4000 Ciss 3000 2000 Coss 0.005 1000 Crss 0 0 10 20 30 40 50 0 0 6 12 18 24 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 11.5 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 11.5 A 1.4 6 r DS(on) – On-Resistance (W) (Normalized) 24 36 48 60 1.2 4 1.0 2 0.8 0 0 12 Qg – Total Gate Charge (nC) 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.05 On-Resistance vs. Gate-to-Source Voltage r DS(on) – On-Resistance ( W ) 0.04 ID = 11.5 A 0.03 I S – Source Current (A) TJ = 150_C 10 0.02 TJ = 25_C 0.01 1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) Document Number: 71291 S-10679—Rev. A, 31-Jul-00 www.vishay.com S FaxBack 408-970-5600 3 Si4825DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.0 0.8 40 V GS(th) Variance (V) 0.6 0.4 0.2 0.0 10 –0.2 –0.4 –50 0 10–2 ID = 250 mA Power (W) 30 50 Single Pulse Power, Junction-to-Ambient 29 –25 0 25 50 75 100 125 150 10–1 1 Time (sec) 10 100 600 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 68_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 4 Document Number: 71291 S-10679—Rev. A, 31-Jul-00