Si4840DY
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
40 40
rDS(on) (W)
0.009 @ VGS = 10 V 0.012 @ VGS = 4.5 V
ID (A)
14 12
D
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4840DY Si4840DY-T1 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
40 "20 14
Steady State
Unit
V
10 8 50 A 1.4 1.56 1.0 - 55 to 150 W _C
ID IDM IS PD TJ, Tstg
11
2.8 3.1 2.0
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71188 S-03950—Rev. B, 16-May-03 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
33 65 17
Maximum
40 80 21
Unit
_C/W
2-1
Si4840DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 32 V, VGS = 0 V VDS = 32 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 12 A VDS = 15 V, ID = 14 A IS = 2.8 A, VGS = 0 V 50 0.0075 0.0095 50 0.75 1.1 0.009 0.012 S V 1.0 "100 1 5 V nA mA A W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.8 A, di/dt = 100 A/ms VDD = 20 V, RL = 20 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.2 VDS = 20 V, VGS = 5 V, ID = 14 A 18.5 6 7.5 0.8 15 10 50 20 30 1.2 30 20 100 40 60 ns ns W 28 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50
Transfer Characteristics
30 3V 20
30
20 TC = 125_C 10 25_C - 55_C
10 2 thru 0 V 0 0 1 2 3 4 5 6
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V) Document Number: 71188 S-03950—Rev. B, 16-May-03
www.vishay.com
2-2
Si4840DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.020 r DS(on) - On-Resistance ( W ) 3000
Capacitance
C - Capacitance (pF)
0.016
2500 Ciss 2000
0.012 VGS = 4.5 V 0.008 VGS = 10 V
1500
1000 Coss Crss
0.004
500
0.000 0 10 20 30 40 50
0 0 8 16 24 32 40
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 V GS - Gate-to-Source Voltage (V) VDS = 20 V ID = 14 A 8 2.0
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 14 A 1.6
6
r DS(on) - On-Resistance (W ) (Normalized) 14 21 28 35
1.2
4
0.8
2
0.4
0 0 7 Qg - Total Gate Charge (nC)
0.0 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50 TJ = 150_C I S - Source Current (A) 0.04
On-Resistance vs. Gate-to-Source Voltage
r DS(on) - On-Resistance ( W )
ID = 14 A 0.03
10
0.02
TJ = 25_C
0.01
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71188 S-03950—Rev. B, 16-May-03
www.vishay.com
2-3
Si4840DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6 0.4 0.2 V GS(th) Variance (V) - 0.0 - 0.2 - 0.4 - 0.6 10 - 0.8 - 1.0 - 50 0 0.01 ID = 250 mA 40 Power (W) 60 50
Single Pulse Power
30
20
- 25
0
25
50
75
100
125
150
0.1
1 Time (sec)
10
100
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05 0.02
t1 t2 1. Duty Cycle, D = t1 t2 PDM
2. Per Unit Base = RthJA = 65_C/W
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10
www.vishay.com
2-4
Document Number: 71188 S-03950—Rev. B, 16-May-03
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