SI4848DY

Si4848DY Vishay Siliconix N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) 0.085 @ VGS = 10 V 0.095 @ VGS = 6.0 V ID (A) 3.7 3.5 D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4848DY Si4848DY-T1 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Avalanch Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 150 "20 3.7 Steady State Unit V 2.7 2.1 25 10 A ID IDM IAS IS PD TJ, Tstg 3.0 2.5 3.0 1.9 -55 to 150 1.3 1.5 1.0 W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71356 S-03950—Rev. B, 26-May-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 35 68 18 Maximum 42 82 23 Unit _C/W 1 Si4848DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 120 V, VGS = 0 V VDS = 120 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 3.5 A rDS( ) DS(on) VGS = 6.0 V, ID = 3.0 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 15 V, ID = 5 A IS = 2.5 A, VGS = 0 V 25 0.068 0.076 15 0.75 1.2 0.085 0.095 W S V 2.0 "100 1 5 V nA mA A Symbol Test Condition Min Typ Max Unit Drain-Source On-State Drain Source On State Resistancea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.5 A, di/dt = 100 A/ms VDD = 75 V, RL = 21 W V, ID ^ 3.5 A, VGEN = 10 V, RG = 6 W 0.5 VDS = 75 V, VGS = 10 V, ID = 3.5 A 17 3.2 6.0 0.85 9.0 10 24 17 45 1.8 14 15 35 25 70 ns W 21 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 25 VGS = 10 thru 6 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 25 Transfer Characteristics 15 5V 10 15 10 TC = 125_C 5 25_C 5 3, 4 V 0 0 2 4 6 8 10 0 0 1 2 3 4 -55_C 5 6 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71356 S-03950—Rev. B, 26-May-03 2 Si4848DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.15 r DS(on) - On-Resistance ( W ) 1200 Capacitance C - Capacitance (pF) 0.12 900 Ciss 0.09 VGS = 6 V 600 0.06 VGS = 10 V 0.03 300 Crss Coss 0.00 0 5 10 15 20 25 0 0 30 60 90 120 150 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 20 V GS - Gate-to-Source Voltage (V) VDS = 75 V ID = 3.5 A 16 3.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.5 A r DS(on) - On-Resistance ( W) (Normalized) 12 18 24 30 2.5 2.0 12 1.5 8 1.0 4 0.5 0 0 6 Qg - Total Gate Charge (nC) 0.0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.25 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.20 ID = 3.5 A 0.15 I S - Source Current (A) TJ = 150_C 10 0.10 TJ = 25_C 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71356 S-03950—Rev. B, 26-May-03 www.vishay.com 3 Si4848DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.0 60 50 0.5 V GS(th) Variance (V) ID = 250 mA 40 0.0 Power (W) Single Pulse Power 30 20 -0.5 -1.0 10 -1.5 -50 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 68_C/W t1 t2 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 1000 www.vishay.com 4 Document Number: 71356 S-03950—Rev. B, 26-May-03