SI4850EY

Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 0.022 @ VGS = 10 V 0.031 @ VGS = 4.5 V ID (A) 8.5 7.2 D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4850EY Si4850EY—E3 (Lead Free) Si4850EY-T1 (with Tape and Reel) Si4850EY-T1—E3 (Lead Free with Tape and Reel) S N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg 10 secs 60 "20 8.5 7.1 40 15 11 3.3 2.3 Steady State Unit V 6.0 5.0 A mJ 1.7 1.2 W _C −55 to 175 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71146 S-40572—Rev. D, 29-Mar-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 36 75 17 Maximum 45 90 20 Unit _C/W 1 Si4850EY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 6.0 A Drain-Source On-State Resistance Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 6.0 A, TJ = 125_C VGS = 10 V, ID = 6.0 A, TJ = 175_C VGS = 4.5 V, ID = 5.1 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 15 V, ID = 6.0 A IS = 1.7 A, VGS = 0 V 40 0.018 0.031 0.039 0.025 25 0.8 1.2 0.022 0.037 0.047 0.031 S V W 60 1 "100 1 20 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 30 V, RL = 30 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W VGS =0.1 V, f = 5 MHz 0.5 VDS = 30 V, VGS = 10 V, ID = 6.0 A 18 3.4 5.3 1.4 10 10 25 12 50 2.4 20 20 50 24 80 ns W 27 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 5 V 40 Transfer Characteristics 32 I D − Drain Current (A) 32 I D − Drain Current (A) 24 4V 16 24 16 TC = 150_C 8 25_C −55_C 3 4 5 8 3V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 71146 S-40572—Rev. D, 29-Mar-04 www.vishay.com 2 Si4850EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.06 0.05 C − Capacitance (pF) 0.04 VGS = 4.5 V 0.03 0.02 0.01 0.00 0 8 16 24 32 40 VGS = 10 V On-Resistance vs. Drain Current 1400 1200 1000 800 600 400 200 0 0 Crss 10 Capacitance r DS(on) − On-Resistance ( W ) Ciss Coss 20 30 40 50 60 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) 10 V GS − Gate-to-Source Voltage (V) VDS = 30 V ID = 6.0 A Gate Charge 2.2 2.0 rDS(on) − On-Resiistance (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 6.0 A 8 6 4 2 0 0 4 8 12 16 20 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.06 0.05 On-Resistance vs. Gate-to-Source Voltage TJ = 175_C 10 r DS(on) − On-Resistance ( W ) I S − Source Current (A) TJ = 25_C 0.04 ID = 6.0 A 0.03 0.02 0.01 0.00 1 0.00 0.5 1.0 1.5 2.0 2.5 VSD − Source-to-Drain Voltage (V) Document Number: 71146 S-40572—Rev. D, 29-Mar-04 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4850EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 ID = 250 mA 0.4 V GS(th) Variance (V) Power (W) 50 Single Pulse Power 40 0.0 30 −0.4 20 −0.8 10 −1.2 −50 0 −25 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 1000 TJ − Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 75_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71146 S-40572—Rev. D, 29-Mar-04