SI4864DY

Si4864DY New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0035 @ VGS = 4.5 V 0.0047 @ VGS = 2.5 V ID (A) 25 20 D TrenchFETr Power MOSFETS: 2.5-V Rated D Low 3.5-mW rDS(on) D PWM (Qgd and RG) Optimized APPLICATIONS D Low-Side MOSFET in Synchronous Buck DC/DC Converters in Servers and Routers D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 20 "8 25 Steady State Unit V 17 13 60 A 1.3 1.6 1 - 55 to 150 W _C ID IDM IS PD TJ, Tstg 20 2.9 3.5 2.2 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71449 S-03662—Rev. B, 14-Apr-03 www.vishay.com t v 10 sec Steady State Steady State RthJA RthJF Symbol Typical 29 67 13 Maximum 35 80 16 Unit _C/W 1 Si4864DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 25 A VGS = 2.5 V, ID = 20 A VDS = 6 V, ID = 25 A IS = 2.9 A, VGS = 0 V 30 0.0028 0.0038 70 0.70 1.1 0.0035 0.0047 S V 0.6 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 0.5 VDS = 10 V, VGS = 4.5 V, ID = 25 A 47 10 13.4 1.5 40 44 150 72 57 2.6 60 65 240 110 80 ns ns W 70 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 5 thru 2.5 V 50 2V 50 60 Transfer Characteristics I D - Drain Current (A) 40 I D - Drain Current (A) 40 30 30 TC = 125_C 20 25_C - 55_C 20 10 10 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71449 S-03662—Rev. B, 14-Apr-03 Si4864DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.005 7500 Vishay Siliconix Capacitance r DS(on) - On-Resistance ( W ) 0.004 VGS = 2.5 V C - Capacitance (pF) 6000 Ciss 0.003 VGS = 4.5 V 4500 0.002 3000 Coss 0.001 1500 Crss 0.000 0 10 20 30 40 50 60 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 25 A 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 25 A 3 r DS(on) - On-Resistance (W ) (Normalized) 24 36 48 60 4 1.4 1.2 2 1.0 1 0.8 0 0 12 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 60 0.010 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 TJ = 25_C r DS(on) - On-Resistance ( W ) 0.008 I S - Source Current (A) 0.006 ID = 25 A 0.004 0.002 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.000 0 1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) Document Number: 71449 S-03662—Rev. B, 14-Apr-03 www.vishay.com 3 Si4864DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 - 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 50 10 ID = 250 mA 40 Power (W) 60 50 Single Pulse Power V GS(th) Variance (V) 30 20 - 25 0 25 50 75 100 125 150 0 10 - 2 10 - 1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 67_C/W t1 t2 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71449 S-03662—Rev. B, 14-Apr-03