SI4866DY

Si4866DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 rDS(on) (W) 0.0055 @ VGS = 4.5 V 0.008 @ VGS = 2.5 V ID (A) 17 14 D D D D TrenchFETr Power MOSFETS PWM Optimized for High Efficiency Low Output Voltage 100% RG Tested APPLICATIONS D Synchronous Rectifier D Point-of-Load Synchronous Buck Converter D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 12 "8 17 Steady State Unit V 11 8 "50 A 1.40 1.6 1.0 -55 to 150 W _C ID IDM IS PD TJ, Tstg 14 2.7 3.0 2.0 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient (MOSFET)a Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71699 S-03662—Rev. B, 14-Apr-03 www.vishay.com t v 10 sec Steady State Steady State RthJA RthJF Symbol Typical 34 67 15 Maximum 41 80 19 Unit _C/W 1 Si4866DY Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Source Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 9.6 V, VGS = 0 V VDS = 9.6 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 17 VGS = 2.5 V, ID = 14 VDS = 6 V, ID = 17 IS = 2.7 A, VGS = 0 V 40 0.0045 0.0065 80 0.70 1.1 0.0055 0.008 S V 0.6 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 2.7 A, di/dt = 100 A/ms VDD = 6 V, RL = 6 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 1.5 VDS = 6 V, VGS = 4.5 V, ID = 17 A 21 4.6 3.5 2.3 28 32 82 35 60 3.9 42 48 123 53 90 ns W 30 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 2.5 V 40 I D - Drain Current (A) I D - Drain Current (A) 2V 30 40 50 Transfer Characteristics 30 20 20 TC = 125_C 10 25_C -55_C 1.5 2.0 2.5 10 1.5 V 0 0 1 2 3 4 5 0 0.0 0.5 1.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71699 S-03662—Rev. B, 14-Apr-03 Si4866DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.015 4000 Vishay Siliconix Capacitance r DS(on) - On-Resistance ( W ) 0.012 C - Capacitance (pF) 3200 Ciss 0.009 VGS = 2.5 V 0.006 VGS = 4.5 V 2400 Coss 1600 0.003 800 Crss 0.000 0 10 20 30 40 50 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 17 A 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 17 A 4 r DS(on) - On-Resistance ( W) (Normalized) 10 15 20 25 30 5 1.4 1.2 3 1.0 2 1 0.8 0 0 5 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.040 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.032 I S - Source Current (A) 0.024 TJ = 25_C 0.016 ID = 17 A 0.008 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.000 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71699 S-03662—Rev. B, 14-Apr-03 www.vishay.com 3 Si4866DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 ID = 250 mA 0.2 V GS(th) Variance (V) Power (W) 200 Single Pulse Power 160 -0.0 120 -0.2 80 -0.4 40 -0.6 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 67_C/W Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71699 S-03662—Rev. B, 14-Apr-03