SI4872DY

Si4872DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0075 @ VGS = 10 V 0.010 @ VGS = 4.5 V ID (A) 15 13 DD DD SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D N-Channel MOSFET G S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 15 13 50 2.7 3.10 2 Steady State Unit V 11.0 9.0 A 1.40 1.56 1.0 –55 to 150 _C W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board. Document Number: 71248 S-01552—Rev. A, 17-Jul-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 33 68 16 Maximum 40 80 21 Unit _C/W 1 Si4872DY Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 13 A VDS = 15 V, ID = 15 A IS = 2.7 A, VGS = 0 V 40 0.0062 0.0083 42 0.73 1.1 0.0075 0.010 S V 1.0 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W 15 V, 15 ID ^ 1 A, VGEN = 10 V RG = 6 W 10 V, VDS = 15 V, VGS = 5.0 V ID = 15 A 15 V 0 V, 15 27 10.2 11.2 16 9 60 37 50 25 20 100 60 80 ns 35 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 4 V 40 I D – Drain Current (A) I D – Drain Current (A) 40 50 Transfer Characteristics 30 3V 20 30 20 TC = 125_C 10 25_C –55_C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 2V 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 2 Document Number: 71248 S-01552—Rev. A, 17-Jul-00 Si4872DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.015 4000 Vishay Siliconix Capacitance r DS(on) – On-Resistance ( W ) 0.012 C – Capacitance (pF) VGS = 4.5 V 0.009 VGS = 10 V 0.006 3200 Ciss 2400 1600 Coss 0.003 800 Crss 0 0 10 20 30 40 50 0 0 5 10 15 20 25 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 15 A 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 15 A r DS(on) – On-Resistance (W) (Normalized) 24 36 48 60 8 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 12 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 0.05 50 0.04 On-Resistance vs. Gate-to-Source Voltage r DS(on) – On-Resistance ( W ) I S – Source Current (A) TJ = 150_C 10 ID = 15 A 0.03 0.02 TJ = 25_C 0.01 1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) Document Number: 71248 S-01552—Rev. A, 17-Jul-00 www.vishay.com S FaxBack 408-970-5600 3 Si4872DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 V GS(th) Variance (V) –0.0 –0.2 –0.4 –0.6 20 –0.8 –1.0 –50 0 –25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ – Temperature (_C) Power (W) 60 ID = 250 mA 80 100 Single Pulse Power, Juncion-To-Ambient 40 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 68_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 4 Document Number: 71248 S-01552—Rev. A, 17-Jul-00