SI4874BDY

Si4874BDY New Product Vishay Siliconix N-Channel 30-V MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 16 14 rDS(on) (W) 0.007 @ VGS = 10 V 0.0085 @ VGS = 4.5 V D TrenchFETr Power MOSFETS D 100% Rg Tested D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4874BDY—E3 Si4874BDY-T1—E3 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 16 13 "50 2.7 3.0 2.0 Steady State Unit V 12 9 A 1.40 1.6 1.0 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient (MOSFET)a Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73058 S-41508—Rev. A, 09-Aug-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 34 68 16 Maximum 41 80 21 Unit _C/W 1 Si4874BDY Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Source Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 16 A VGS = 4.5 V, ID = 14 A VDS = 15 V, ID = 16 A IS = 2.7 A, VGS = 0 V 30 0.0057 0.0068 65 0.74 1.1 0.007 0.0085 1.0 3.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W 0.4 VDS = 15 V, VGS = 4.5 V, ID = 16 A 21 9.5 6.5 0.9 16 10 57 15 40 1.4 25 20 90 25 60 ns W 25 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 4 V 40 I D − Drain Current (A) I D − Drain Current (A) 40 50 Transfer Characteristics 30 30 20 3V 20 TC = 125_C 10 25_C −55_C 10 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS − Drain-to-Source Voltage (V) www.vishay.com VGS − Gate-to-Source Voltage (V) Document Number: 73058 S-41508—Rev. A, 09-Aug-04 2 Si4874BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.010 Vishay Siliconix On-Resistance vs. Drain Current 4000 3500 Capacitance Ciss r DS(on) − On-Resistance ( W ) 0.008 0.006 VGS = 10 V C − Capacitance (pF) VGS = 4.5 V 3000 2500 2000 1500 1000 500 Crss Coss 0.004 0.002 0.000 0 10 20 30 40 50 0 0 5 10 15 20 25 30 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) 6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 6 VDS = 15 V ID = 16 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 16 A rDS(on) − On-Resiistance (Normalized) 12 18 24 30 1.4 1.2 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.020 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) − On-Resistance ( W ) 0.016 ID = 16 A 0.012 I S − Source Current (A) TJ = 25_C 0.008 0.004 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD − Source-to-Drain Voltage (V) Document Number: 73058 S-41508—Rev. A, 09-Aug-04 0.000 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4874BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 −0.0 Power (W) −0.2 −0.4 −0.6 40 −0.8 −1.0 −50 0 −25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ − Temperature (_C) 120 200 Single Pulse Power ID = 250 mA 160 V GS(th) Variance (V) 80 100 Limited by rDS(on) 10 I D − Drain Current (A) Safe Operating Area 1 ms 10 ms 1 100 ms 1s 10 s dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) 0.1 TC = 25_C Single Pulse Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 67_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 73058 S-41508—Rev. A, 09-Aug-04 Si4874BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Vishay Siliconix Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 73058 S-41508—Rev. A, 09-Aug-04 www.vishay.com 5