Si4874BDY
New Product
Vishay Siliconix
N-Channel 30-V MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
16 14
rDS(on) (W)
0.007 @ VGS = 10 V 0.0085 @ VGS = 4.5 V
D TrenchFETr Power MOSFETS D 100% Rg Tested
D
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4874BDY—E3 Si4874BDY-T1—E3 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
30 "20 16 13 "50 2.7 3.0 2.0
Steady State
Unit
V
12 9 A
1.40 1.6 1.0 −55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient (MOSFET)a Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73058 S-41508—Rev. A, 09-Aug-04 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
34 68 16
Maximum
41 80 21
Unit
_C/W
1
Si4874BDY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Source Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 16 A VGS = 4.5 V, ID = 14 A VDS = 15 V, ID = 16 A IS = 2.7 A, VGS = 0 V 30 0.0057 0.0068 65 0.74 1.1 0.007 0.0085 1.0 3.0 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W 0.4 VDS = 15 V, VGS = 4.5 V, ID = 16 A 21 9.5 6.5 0.9 16 10 57 15 40 1.4 25 20 90 25 60 ns W 25 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50 VGS = 10 thru 4 V 40 I D − Drain Current (A) I D − Drain Current (A) 40 50
Transfer Characteristics
30
30
20 3V
20 TC = 125_C 10 25_C −55_C
10
0 0 1 2 3 4 5
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS − Drain-to-Source Voltage (V) www.vishay.com
VGS − Gate-to-Source Voltage (V) Document Number: 73058 S-41508—Rev. A, 09-Aug-04
2
Si4874BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
Vishay Siliconix
On-Resistance vs. Drain Current
4000 3500
Capacitance
Ciss
r DS(on) − On-Resistance ( W )
0.008
0.006
VGS = 10 V
C − Capacitance (pF)
VGS = 4.5 V
3000 2500 2000 1500 1000 500 Crss Coss
0.004
0.002
0.000 0 10 20 30 40 50
0 0 5 10 15 20 25 30
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 6 VDS = 15 V ID = 16 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 16 A
rDS(on) − On-Resiistance (Normalized) 12 18 24 30
1.4
1.2
1.0
0.8
0.6 −50
−25
0
25
50
75
100
125
150
Qg − Total Gate Charge (nC)
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
0.020
On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C 10
r DS(on) − On-Resistance ( W )
0.016 ID = 16 A 0.012
I S − Source Current (A)
TJ = 25_C
0.008
0.004
1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD − Source-to-Drain Voltage (V) Document Number: 73058 S-41508—Rev. A, 09-Aug-04
0.000 0 2 4 6 8 10
VGS − Gate-to-Source Voltage (V)
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3
Si4874BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 0.2 −0.0 Power (W) −0.2 −0.4 −0.6 40 −0.8 −1.0 −50 0 −25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ − Temperature (_C) 120 200
Single Pulse Power
ID = 250 mA
160
V GS(th) Variance (V)
80
100 Limited by rDS(on) 10 I D − Drain Current (A)
Safe Operating Area
1 ms
10 ms 1 100 ms 1s 10 s dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V)
0.1
TC = 25_C Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec)
Notes: PDM t1
t2 1. Duty Cycle, D =
t1 t2 2. Per Unit Base = RthJA = 67_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
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4
Document Number: 73058 S-41508—Rev. A, 09-Aug-04
Si4874BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Duty Cycle = 0.5
Vishay Siliconix
Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10
Document Number: 73058 S-41508—Rev. A, 09-Aug-04
www.vishay.com
5
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