SI4882DY

Si4882DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0105 @ VGS = 10 V 0.0205 @ VGS = 4.5 V ID (A) "11 "8 DD DD SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D N-Channel MOSFET G S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage a, Continuous Drain Current (TJ = 150_C)a, b Drain Current Symbol VDS VGS TA = 25_C TA = 70 _C ID IDM IS TA = 25_C TA = 70_C PD TJ, Tstg Limit 30 "25 "11 "9 "50 2.3 2.5 1.6 –55 to 150 Unit V A Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Power Dissipationa, Operating Junction and Storage Temperature Range W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Foot Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70878 S-00271—Rev. A, 26-Apr-99 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Steady State RthJF 19 25 Symbol RthJA Typical 35 68 Maximum 50 80 Unit _C/W 2-1 Si4882DY Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 11 A VGS = 4.5 V, ID = 8 A VDS = 15 V, ID = 11 A IS = 2.3 A, VGS = 0 V 40 0.0087 0.017 26 0.70 1.1 0.0105 0.0205 S V 1.0 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.3 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W 15 V, 15 ID ^ 1 A, VGEN = 10 V RG = 6 W 10 V, VDS = 15 V, VGS = 5.0 V ID = 11 A 15 V 0 V, 11 13.5 3.9 6.0 13 8 45 19 40 20 12 68 30 70 ns 17 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 5 V 40 I D – Drain Current (A) I D – Drain Current (A) 40 50 Transfer Characteristics 30 4V 20 30 20 TC = 125_C 10 25_C 0 10 3V 0 0 2 4 6 8 10 –55_C 3 4 5 0 1 2 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70878 S-00271—Rev. A, 26-Apr-99 Si4882DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.030 r DS(on) – On-Resistance ( W ) 2000 Vishay Siliconix Capacitance 0.025 VGS = 4.5 V C – Capacitance (pF) 1600 Ciss 0.020 1200 0.015 VGS = 10 V 800 Coss 400 Crss 0.010 0.005 0 0 10 20 30 40 50 0 0 6 12 18 24 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) r DS(on) – On-Resistance ( W) (Normalized) VDS = 15 V ID = 11 A 8 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 0 6 12 18 24 30 Qg – Total Gate Charge (nC) 0.4 –50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 11 A 6 4 2 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.10 On-Resistance vs. Gate-to-Source Voltage r DS(on) – On-Resistance ( W ) 0.08 I S – Source Current (A) TJ = 150_C 10 0.06 ID = 11 A 0.04 TJ = 25_C 0.02 1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) Document Number: 70878 S-00271—Rev. A, 26-Apr-99 www.vishay.com S FaxBack 408-970-5600 2-3 Si4882DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 V GS(th) Variance (V) –0.0 –0.2 –0.4 –0.6 10 –0.8 –1.0 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 30 TJ – Temperature (_C) ID = 250 mA Power (W) 40 60 50 Single Pulse Power 30 20 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 68_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70878 S-00271—Rev. A, 26-Apr-99