Si4886DY
New Product
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.010 @ VGS = 10 V 0.0135 @ VGS = 4.5 V
ID (A)
13 11
DD
DD
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D D N-Channel MOSFET G
S
S
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
30 "20 13 10.5 "50 2.60 2.95 1.90
Steady State
Unit
V
9.5 7.6 A
1.40 1.56 1.0 –55 to 150 _C W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71142 S-00206—Rev. A, 21-Feb-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
35 68 18
Maximum
42 80 23
Unit
_C/W
2-1
Si4886DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 13 A VGS = 4.5 V, ID = 11 A VDS = 15 V, ID = 13 A IS = 2.6 A, VGS = 0 V 40 0.0078 0.0105 38 0.74 1.1 0.010 0.0135 S V 0.80 "100 1 5 V nA mA A W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.6 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W 15 V, 15 ID ^ 1 A, VGEN = 10 V RG = 6 W 10 V, VDS = 15 V, VGS = 5.0 V ID = 13 A 15 V 0 V, 13 14.5 3.2 4.3 14 5 42 18 40 20 10 80 30 70 ns 20 nC C
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50 VGS = 10 thru 4 V 40 I D – Drain Current (A) I D – Drain Current (A) 40 50
Transfer Characteristics
30
30
20 3V 10
20 TC = 125_C 10 25_C –55_C 2.0 2.5 3.0 3.5
0 0 2 4 6
1V 8 10
0 0 0.5 1.0 1.5
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 71142 S-00206—Rev. A, 21-Feb-00
Si4886DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.020 2500
Vishay Siliconix
Capacitance
r DS(on) – On-Resistance ( W )
2000 C – Capacitance (pF) 0.015
Ciss
VGS = 4.5 V 0.010 VGS = 10 V
1500
1000 Coss 500 Crss
0.005
0 0 10 20 30 40 50
0 0 5 10 15 20 25 30
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
Gate Charge
10 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 13 A
1.8 1.6 r DS(on) – On-Resistance (W) (Normalized) 1.4 1.2 1.0 0.8 0.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 13 A
8
6
4
2
0 0 5 10 15 20 25 30
0.4 –50
–25
0
25
50
75
100
125
150
Qg – Total Gate Charge (nC)
TJ – Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50 0.05
On-Resistance vs. Gate-to-Source Voltage
10
TJ = 150_C
r DS(on) – On-Resistance ( W )
0.04
I S – Source Current (A)
0.03
TJ = 25_C
0.02 ID = 13 A 0.01
1 0.00 0.2 0.4 0.6 0.8 1.0 1.2
0 0 2 4 6 8 10
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
Document Number: 71142 S-00206—Rev. A, 21-Feb-00
www.vishay.com S FaxBack 408-970-5600
2-3
Si4886DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 ID = 250 mA 60 50
Single Pulse Power
0.2 V GS(th) Variance (V)
Power (W)
–0.0
40
–0.2
30
–0.4
20
–0.6
10
–0.8 –50
0 –25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 30 TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2
Notes:
0.1 0.1 0.05
t1 PDM
0.02
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 68_C/W
t1 t2
Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec)
3. TJM – TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 71142 S-00206—Rev. A, 21-Feb-00
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