SI4892DY

Si4892DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 12.4 9.6 rDS(on) (W) 0.012 @ VGS = 10 V 0.020 @ VGS = 4.5 V D D D D TrenchFETr Power MOSFET High Efficiency PWM Optimized 100% Rg Tested 100% UIS Tested COMPLIANT RoHS D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4892DY-T1 Si4892DY-T1–E3 (Lead (Pb)–free) 8 7 6 5 D D D D N-Channel MOSFET G S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a (T 150 Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0 1 mH 0.1 TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 12.4 Steady State Unit V 8.8 7.0 "50 A 1.3 20 20 mJ 1.6 1.0 –55 to 150 W _C ID IDM IS IAS EAS 9.9 2.60 3.1 PD TJ, Tstg 2.0 THERMAL RATINGSRESISTANCE Parameter t v 10 sec Maximum Junction to Ambient (MOSFET)a Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71407 S-51455—Rev. F, 01-Aug-05 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 34 70 17 Maximum 40 80 20 Unit _C/W 1 Si4892DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 12.4 A VGS = 4.5 V, ID = 9.6 A VDS = 15 V, ID = 12.4 A IS = 2.6 A, VGS = 0 V 50 0.010 0.016 27 0.75 1.2 0.012 0.020 S V 0.80 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Reverse Recovery Charge Notes a. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. Guaranteed by design, not subject to production testing. Qg Qgs Qgd Rg td(on) tr td(off) tf trr Qrr IF = 2.6 A di/dt = 100 A/ms 6 A, VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 VDS = 15 V, VGS = 5.0 V, ID = 12.4 A 8.7 2.4 3.5 1.1 10 11 24 10 50 38 1.9 20 20 50 20 75 nC ns W 10.5 nC TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 50 Transfer Characteristics 40 I D – Drain Current (A) VGS = 10 thru 4 V I D – Drain Current (A) 40 30 30 20 3V 20 TC = 125_C 10 25_C –55_C 10 0 0 1 2 2V 3 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS – Drain-to-Source Voltage (V) www.vishay.com VGS – Gate-to-Source Voltage (V) Document Number: 71407 S-51455—Rev. F, 01-Aug-05 2 Si4892DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.025 1200 Capacitance r DS(on) – On-Resistance ( W ) 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 C – Capacitance (pF) 1000 Ciss 800 600 Coss Crss 200 400 0.005 0.000 0 10 20 30 40 50 0 0 5 10 15 20 25 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 12.4 A rDS(on) – On-Resistance (Normalized) 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 12.4 A 8 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 2 4 6 8 10 12 14 16 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.05 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) – On-Resistance ( W ) 0.04 I S – Source Current (A) 0.03 ID = 12.4 A 0.02 TJ = 25_C 0.01 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 71407 S-51455—Rev. F, 01-Aug-05 www.vishay.com 3 Si4892DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 –0.0 Power (W) 30 –0.2 –0.4 –0.6 10 –0.8 –1.0 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ – Temperature (_C) ID = 250 mA 50 Single Pulse Power 40 V GS(th) Variance (V) 20 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 70_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71407 S-51455—Rev. F, 01-Aug-05