SI4894BDY

Specification Comparison Vishay Siliconix Si4894BDY vs. Si4894DY Description: N-Channel, 30-V (D-S) MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4894BDY-T1 Replaces Si4894DY-T1 Si4894BDY-T1—E3 (Lead (Pb)-Free version) Replaces Si4894DY-T1—E3 Summary of Performance: The Si4894BDY is the replacement for the original Si4894DY; both parts perform identically including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD Tj and Tstg RthJA Si4894BDY 30 "20 12 9.5 40 2.3 2.5 1.6 −55 to 150 50 Si4894DY 30 "20 12.5 10 20 2.7 3.0 1.9 −55 to 150 42 Unit V A W _C _C/W Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Si4894BDY Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Drain Source On Resistance Forward Transconductance Diode Forward Voltage VGS = 10 V VGS = 10 V VGS = 4.5 V VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD 30 0.009 0.013 32 0.76 1.1 0.011 0.018 1.0 3.0 "100 1 30 0.010 0.015 30 0.7 1.1 0.012 0.018 0.8 "100 1 V nA mA A W S V Si4894DY Max Min Typ Max Unit Symbol Min Typ Dynamic Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance VGS = 10 V VGS = 5 V Qg Qgs Qgd Rg 0.9 25.4 13.2 5.3 4.3 1.8 2.7 1 38 20 20 11.5 3.0 4.5 2.4 W 30 17 nC nC Switching Turn-On Time Turn-On Time Turn Off Time Turn-Off Source-Drain Reverse Recovery Time NS denotes parameter not specified in original data sheet. Document Number: 73277 06-Jan-05 www.vishay.com td(on) tr td(off) tf trr 13 10 33 10 25 20 15 50 15 40 10 5 30 10 30 20 10 60 20 60 ns 1