Si4931DY
New Product
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.018 @ VGS = −4.5 V −12 0.022 @ VGS = −2.5 V 0.028 @ VGS = −1.8 V
FEATURES
ID (A)
−8.9 −8.1 −3.6
D TrenchFETr Power MOSFET D Advanced High Cell Density Process
APPLICATIONS
D Load Switching
S1
S2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4931DY—E3 Si4931DY-T1—E3 (with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 G1 G2
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
−12 "8
Unit
V
−8.9 −7.1 −30 −1.7 2.0 1.3 −55 to 150
−6.7 −5.4 A
−0.9 1.1 0.7 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 ” x 1” FR4 Board. Document Number: 72379 S-32411—Rev. B, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
46 80 24
Maximum
62.5 110 32
Unit
_C/W
1
Si4931DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = −350 mA VDS = 0 V, VGS = "8 V VDS = −12 V, VGS = 0 V VDS = −12 V, VGS = 0 V, TJ = 55_C VDS = −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −8.9 A Drain-Source On-State Resistancea rDS(on) VGS = −2.5 V, ID = −8.1 A VGS = −1.8 V, ID = −3.6 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = −6 V, ID = −8.9 A IS = −1.7 A, VGS = 0 V −30 0.0145 0.018 0.023 26 −0.7 −1.2 0.018 0.022 0.028 S V W −0.4 −1.0 "100 −1 −5 V nA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −1.7 A, di/dt = 100 A/ms VDD = −6 V, RL = 6 W V, ID ^ −1 A, VGEN = −4.5 V, RG = 6 W VDS = −6 V, VGS = −4.5 V, ID = −8.9 A 34.5 5.1 9.6 9 25 46 230 155 128 40 70 345 235 200 ns W 52 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30 VGS = 5 thru 2 V 24 I D − Drain Current (A) I D − Drain Current (A) 24 30
Transfer Characteristics
18
18
12
1.5 V
12 TC = 125_C 6 25_C 0 0.0
6 1V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V)
−55_C 1.0 1.5 2.0 2.5
0.5
VGS − Gate-to-Source Voltage (V) Document Number: 72379 S-32411—Rev. B, 24-Nov-03
www.vishay.com
2
Si4931DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10 r DS(on) − On-Resistance ( W ) 5000
Vishay Siliconix
Capacitance
C − Capacitance (pF)
0.08
4000 Ciss 3000
0.06
0.04
VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V
2000 Coss 1000 Crss
0.02
0.00 0 6 12 18 24 30
0 0 2 4 6 8 10 12
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
Gate Charge
5 V GS − Gate-to-Source Voltage (V) VDS = 6 V ID = 8.9 A 4 1.4
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 8.9 A 1.2
3
r DS(on) − On-Resistance (W ) (Normalized)
1.0
2
1
0.8
0 0 10 20 30 40 Qg − Total Gate Charge (nC)
0.6 −50
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30 0.10
On-Resistance vs. Gate-to-Source Voltage
r DS(on) − On-Resistance ( W )
0.08 ID = 8.9 A 0.06 ID = 3.6 A 0.04
I S − Source Current (A)
10
TJ = 150_C
TJ = 25_C
0.02
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
Document Number: 72379 S-32411—Rev. B, 24-Nov-03
www.vishay.com
3
Si4931DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 0.3 V GS(th) Variance (V) ID = 350 mA 0.2 0.1 0.0 −0.1 −0.2 −50 6 Power (W) 18 30
Single Pulse Power
24
12
−25
0
25
50
75
100
125
150
0 10−2
10−1
1 Time (sec)
10
100
600
TJ − Temperature (_C)
100
Safe Operating Area, Junction-to-Ambient
rDS(on) Limited IDM Limited
10 I D − Drain Current (A)
P(t) = 0.001 P(t) = 0.01
1
ID(on) Limited
P(t) = 0.1 P(t) = 1
0.1
TA = 25_C Single Pulse BVDSS Limited 1 10
P(t) = 10 dc
0.01 0.1
100
VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1
Notes: PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 80_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
www.vishay.com
4
Document Number: 72379 S-32411—Rev. B, 24-Nov-03
Si4931DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1
Vishay Siliconix
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10
Document Number: 72379 S-32411—Rev. B, 24-Nov-03
www.vishay.com
5
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