SI4933DY

Si4933DY New Product Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.014 @ VGS = -4.5 V -12 0.017 @ VGS = -2.5 V 0.022 @ VGS = -1.8 V FEATURES ID (A) -9.8 - 8.9 - 7.8 D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS D Load Switching S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID -7.8 IDM IS -1.7 2.0 1.3 -55 to 150 -30 -0.9 1.1 0.7 W _C -5.9 A Symbol VDS VGS 10 secs Steady State -12 "8 Unit V - 9.8 -7.4 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 ” x 1” FR4 Board. Document Number: 71980 S-22122—Rev. B, 25-Nov-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 45 85 26 Maximum 62.5 110 35 Unit _C/W 1 Si4933DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -500 mA VDS = 0 V, VGS = "8 V VDS = -9.6 V, VGS = 0 V VDS = -9.6 V, VGS = 0 V, TJ = 55_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -9.8 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -8.9 A VGS = -1.8 V, ID = -5.0 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -10 V, ID = -9.8 A IS = -1.7 A, VGS = 0 V -30 0.0115 0.014 0.018 40 -0.7 -1.2 0.014 0.017 0.022 S V W -0.40 -1.0 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.7 A, di/dt = 100 A/ms VDD = 6 V, RL = 6 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W VDS = 6 V, VGS = -4.5 V, ID = -9.8 A 46 6.0 13 35 47 320 260 210 55 70 480 390 315 ns 70 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 1.5 V 30 Transfer Characteristics 18 18 12 12 TC = 125_C 6 25_C -55 _C 6 1V 0 0 1 2 3 4 5 0 0.0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71980 S-22122—Rev. B, 25-Nov-02 www.vishay.com 2 Si4933DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.030 r DS(on) - On-Resistance ( W ) 6000 Vishay Siliconix Capacitance 0.025 C - Capacitance (pF) 5000 Ciss 0.020 VGS = 1.8 V 0.015 VGS = 2.5 V 4000 3000 0.010 VGS = 4.5 V 0.005 2000 Coss 1000 Crss 0.000 0 6 12 18 24 30 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 9.8 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 9.8 A 1.4 3 r DS(on) - On-Resistance (W ) (Normalized) 20 30 40 50 1.2 2 1.0 1 0.8 0 0 10 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.030 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.025 ID = 3 A 0.020 ID = 9.8 A 0.015 TJ = 25_C 0.010 0.005 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71980 S-22122—Rev. B, 25-Nov-02 www.vishay.com 3 Si4933DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 50 Single Pulse Power 0.3 V GS(th) Variance (V) ID = 500 mA 0.2 Power (W) 40 30 0.1 20 0.0 10 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 0 10- 2 10- 1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-to-Ambient 100 rDS(on) Limited IDM Limited P(t) = 0.0001 10 I D - Drain Current (A) P(t) = 0.001 P(t) = 0.01 1 ID(on) Limited P(t) = 0.1 P(t) = 1 P(t) = 10 dc 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85_C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71980 S-22122—Rev. B, 25-Nov-02 Si4933DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71980 S-22122—Rev. B, 25-Nov-02 www.vishay.com 5