SI4936DY

Si4936DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(ON) (W) 0.037 @ VGS = 10 V 0.055 @ VGS = 4.5 V ID (A) "5.8 "4.7 D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)A Drain Current (T 150 Pulsed Drain Current Continuous Source Current (Diode Conduction)A Maximum Power DissipationA Power Dissi Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C SYMBOL VDS VGS ID IDM IS PD TJ, Tstg LIMIT 30 "20 "5.8 "4.6 "30 1.7 2 W 1.3 –55 to 150 _C A V UNIT THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-AmbientA Notes A. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70150. For SPICE model information via the Worldwide Web: http://www.siliconix.com/www/product/spice.htm. Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-49532—Rev. D, 02-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors SYMBOL RthJA LIMIT 62.5 UNIT _C/W 3-1 Si4936DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) PARAMETER STATIC Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain CurrentB Drain-Source On-State ResistanceB On Resistance Forward TransconductanceB Diode Forward VoltageB DYNAMICA Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 10 V, ID = 5.8 A 18 4.5 2.5 10 10 27 24 45 16 16 40 35 80 ns 25 nC VGS(th) IGSS IDSS ID(on) rDS(on) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 5.8 A VGS = 4.5 V, ID = 4.7 A VDS = 15 V, ID = 5.8 A IS = 1.7 A, VGS = 0 V 20 0.030 0.042 13 0.8 1.2 0.037 W 0.055 S V 1 "100 1 25 V nA mA A SYMBOL TEST CONDITION MIN TYPA MAX UNIT Notes A. Pulse test; pulse width v 300 ms, duty cycle v 2%. B. Guaranteed by design, not subject to production testing. Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-49532—Rev. D, 02-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 3-2 Si4936DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) Output Characteristics 30 VGS = 10 thru 5 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 30 TC = –55_C 25_C 125_C 18 Transfer Characteristics 18 4V 12 12 6 2, 1 V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 3V 6 0 0 1 2 3 4 5 6 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On Resistance vs. Drain Current 0.10 1250 Capacitance Ciss r DS(on)– On-Resistance ( W ) 0.08 C – Capacitance (pF) 1000 0.06 VGS = 4.5 V 0.04 VGS = 10 V 750 500 Coss 0.02 250 Crss 0 0 6 12 18 24 30 36 0 0 6 12 18 24 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 10 VDS = 15 V ID = 5.8 A Gate Charge 2.00 On Resistance vs. Junction Temperature V GS – Gate-to-Source Voltage (V) r DS(on)– On-Resistance ( W ) (Normalized) 8 1.75 VGS = 10 V ID = 5.8 A 1.50 6 1.25 4 1.00 2 0.75 0 0 4 8 12 16 20 Qg – Total Gate Charge (nC) 0.5 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-49532—Rev. D, 02-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 3-3 Si4936DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) Source Drain Diode Forward Voltage 100 0.09 0.08 r DS(on)– On-Resistance ( W ) On Resistance vs. Gate to Source Voltage 10 I S – Source Current (A) TJ = 150_C 1 TJ = 25_C 0.1 0.07 0.06 ID = 5.8 A 0.05 0.04 0.03 0.02 0.01 0.01 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) 0.4 Threshold Voltage 50 Single Pulse Power 0.2 40 V GS(th) Variance (V) –0.0 –0.2 Power (W) ID = 250 mA 30 20 –0.4 10 –0.6 –0.8 –50 –25 0 25 50 75 100 125 150 0 0.01 0.10 1.00 Time (sec) 10.00 TJ – Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction to Ambient 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-49532—Rev. D, 02-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 3-4 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.