SI4940DY

Si4940DY New Product Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 FEATURES ID (A) 5.7 4.4 rDS(on) (W) 0.036 @ VGS = 10 V 0.059 @ VGS = 4.5 V D TrenchFETr Power MOSFET APPLICATIONS D Automotive Airbags D1 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 S1 N-Channel MOSFET S2 N-Channel MOSFET G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 40 "20 5.7 Steady State Unit V 4.2 3.4 30 A 0.9 1.1 0.7 –55 to 150 W _C ID IDM IS PD TJ, Tstg 4.5 1.8 2.1 1.3 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71649 S-04277—Rev. B, 16-Jul-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 50 90 28 Maximum 60 110 34 Unit _C/W 1 Si4940DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 32 V, VGS = 0 V VDS = 32 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 5.7 A VGS = 4.5 V, ID = 4.4 A VDS = 15 V, ID = 5.7 A IS = 1.8 A, VGS = 0 V 30 0.03 0.048 12 0.8 1.1 0.036 0.059 S V 1.0 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 1.8 A, di/dt = 100 A/ms VDD = 20 V, RL = 20 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 20 V, VGS = 10 V, ID = 5.7 A 9.0 1.8 2.3 1.0 7 12 15 8 35 15 25 30 15 70 ns W 14 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 6 V 25 I D – Drain Current (A) 5V 30 Transfer Characteristics 25 I D – Drain Current (A) 20 20 15 4V 10 15 10 TC = 125_C 5 25_C –55_C 0 5 3V 0 0 1 2 3 4 5 0 1 2 3 4 5 6 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 71649 S-04277—Rev. B, 16-Jul-01 www.vishay.com 2 Si4940DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) – On-Resistance ( W ) 600 Vishay Siliconix Capacitance C – Capacitance (pF) 0.08 VGS = 4.5 V 0.06 500 Ciss 400 300 0.04 VGS = 10 V 200 Coss 100 Crss 0.02 0.00 0 5 10 15 20 25 30 0 0 8 16 24 32 40 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) VDS = 20 V ID = 5.7 A 8 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5.7 A 1.6 6 r DS(on) – On-Resistance (W ) (Normalized) 4 6 8 10 1.2 4 0.8 2 0.4 0 0 2 Qg – Total Gate Charge (nC) 0.0 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage ID = 3 A I S – Source Current (A) TJ = 150_C 10 r DS(on) – On-Resistance ( W ) 0.08 ID = 5.7 A 0.06 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 71649 S-04277—Rev. B, 16-Jul-01 www.vishay.com 3 Si4940DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 50 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA –0.0 Power (W) 40 30 –0.2 20 –0.4 10 –0.6 –0.8 –50 –25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 90_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71649 S-04277—Rev. B, 16-Jul-01