Si4944DY
New Product
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
12.2 9.4
rDS(on) (W)
0.0095 @ VGS = 10 V 0.016 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 100% Rg Tested
APPLICATIONS
D DC/DC Conversion D Load Switching
SO-8
S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 G1
D1
D2
G2
S1 Ordering Information: Si4944DY Si4944DY-T1 (with Tape and Reel) N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
30 "20 12.2 8.8 30 1.9 2.3 1.2
Steady State
Unit
V
9.3 6.7 A
1.1 1.3 0.7 −55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72512 S-32131—Rev. A, 27-Oct-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
42 75 19
Maximum
55 95 25
Unit
_C/W
1
Si4944DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 12.2 A VGS = 4.5 V, ID = 9.4 A VDS = 10 V, ID = 12.2 A IS = 1.9 A, VGS = 0 V 30 0.0075 0.013 32 0.8 1.2 0.0095 0.016 1 3 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W f = 1 MHz 0.5 VDS = 15 V, VGS = 4.5 V, ID = 12.2 A 13.5 7.1 4.7 1.0 10 10 40 12 45 1.7 15 15 60 20 70 ns W 21 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30 VGS = 10 thru 5 V 24 I D − Drain Current (A) 4V I D − Drain Current (A) 24 30
Transfer Characteristics
18
18
12
12 TC = 125_C 6 25_C −55_C 3.0 3.5 4.0 4.5
6 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
0 0.0
0.5
1.0
1.5
2.0
2.5
VDS − Drain-to-Source Voltage (V) www.vishay.com
VGS − Gate-to-Source Voltage (V) Document Number: 72512 S-32131—Rev. A, 27-Oct-03
2
Si4944DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.030 r DS(on) − On-Resistance ( W ) 2400 Ciss C − Capacitance (pF) 0.024 1800
Vishay Siliconix
Capacitance
0.018
VGS = 4.5 V
1200
0.012 VGS = 10 V 0.006
600 Crss 0 0 6 12 18 24 30 0 6 12
Coss
0.000
18
24
30
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
Gate Charge
10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 12.2 A 8 1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 12.2 A 1.4
6
r DS(on) − On-Resistance (W ) (Normalized) 10 15 20 25 30
1.2
4
1.0
2
0.8
0 0 5 Qg − Total Gate Charge (nC)
0.6 −50
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30 0.06 0.05
On-Resistance vs. Gate-to-Source Voltage
I S − Source Current (A)
TJ = 150_C 10
r DS(on) − On-Resistance ( W )
ID = 12.2 A 0.04 ID = 3 A 0.03 0.02 0.01 0.00
TJ = 25_C
1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
VSD − Source-to-Drain Voltage (V)
VGS − Gate-to-Source Voltage (V)
Document Number: 72512 S-32131—Rev. A, 27-Oct-03
www.vishay.com
3
Si4944DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 0.2 V GS(th) Variance (V) −0.0 −0.2 −0.4 −0.6 10 −0.8 −1.0 −50 0 0.01 ID = 250 mA Power (W) 30 50
Single Pulse Power
40
20
−25
0
25
50
75
100
125
150
0.1
1 Time (sec)
10
100
600
TJ − Temperature (_C) 100 rDS(on) Limited
Safe Operating Area
IDM Limited
10 I D − Drain Current (A) ID(on) Limited 1
P(t) = 0.001 P(t) = 0.01 P(t) = 0.1
0.1
TA = 25_C Single Pulse BVDSS Limited
P(t) = 1 P(t) = 10 dc
0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec)
Notes: PDM t1
t2 1. Duty Cycle, D =
t1 t2 2. Per Unit Base = RthJA = 75_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72512 S-32131—Rev. A, 27-Oct-03
Si4944DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1
Vishay Siliconix
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5 0.2 0.1
0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10
Document Number: 72512 S-32131—Rev. A, 27-Oct-03
www.vishay.com
5
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