SI4946EY-T1

Si4946EY Vishay Siliconix Dual N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 0.055 @ VGS = 10 V 0.075 @ VGS = 4.5 V ID (A) 4.5 3.9 D SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4946EY Si4946EY-T1 (with Tape and Reel) S N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS Symbol VDS VGS Limit 60 "20 4.5 3.8 30 2 2.4 1.7 - 55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70157 S-03950—Rev. D, 26-May-03 www.vishay.com Symbol RthJA Limit 62.5 Unit _C/W 2-1 Si4946EY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Drain Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 4.5 A VGS = 4.5 V, ID = 3.9 A VDS = 15 V, ID = 4.5 A IS = 2 A, VGS = 0 V 20 0.045 0.055 13 0.9 1.2 0.055 0.075 1 "100 2 25 V nA mA A W S V Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2 A, di/dt = 100 A/ms VDD = 30 V, RL = 30 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 1 13 11 36 11 35 VDS = 30 V, VGS = 10 V, ID = 4.5 A 19 4 3 3.6 20 20 60 20 60 ns W 30 nC Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2-2 Document Number: 70157 S-03950—Rev. D, 26-May-03 Si4946EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 24 I D - Drain Current (A) I D - Drain Current (A) 4V 18 24 30 TC = - 55_C 25_C 150_C 18 Transfer Characteristics 12 12 6 3V 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.150 1400 1200 C - Capacitance (pF) 1000 800 600 400 Capacitance 0.125 r DS(on) - On-Resistance ( Ω ) 0.100 Ciss 0.075 VGS = 4.5 V VGS = 10 V 0.050 0.025 Coss 200 0 0 6 12 18 24 30 0 12 24 36 48 60 Crss 0.000 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 VDS = 30 V ID = 4.5 A V GS - Gate-to-Source Voltage (V) r DS(on) - On-Resistance ( Ω ) (Normalized) 8 2.2 On-Resistance vs. Junction Temperature VGS = 10 V ID = 4.5 A 1.9 1.6 6 1.3 4 1.0 2 0.7 0 0 4 8 12 16 20 0.4 - 50 - 25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70157 S-03950—Rev. D, 26-May-03 www.vishay.com 2-3 Si4946EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 r DS(on) - On-Resistance ( Ω ) 0.08 0.06 ID = 4.5 A 0.04 TJ = 175_C TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.2 - 0.0 ID = 250 µA - 0.2 - 0.4 - 0.6 10 - 0.8 - 1.0 - 50 0 - 25 0 25 50 75 100 125 150 175 0.01 Power (W) 30 50 Single Pulse Power 40 V GS(th) Variance (V) 20 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = 0.02 Single Pulse 0.01 10 -4 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 -3 10 -2 10 -1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 70157 S-03950—Rev. D, 26-May-03