Si4947ADY
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 30
rDS(on) (W)
0.080 @ VGS = - 10 V 0.135 @ VGS = - 4.5 V
ID (A)
- 3.9 - 3.0
S1
S2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View D1 Ordering Information: Si4947ADY Si4947ADY-T1 (with Tape and Reel) P-Channel MOSFET D2 P-Channel MOSFET 8 7 6 5 D1 D1 D2 D2
G1
G2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
- 30 "20
Unit
V
- 3.9 - 3.1 - 20 - 1.7 2.0 1.3 - 55 to 150
- 3.0 - 2.4 A
- 1.0 1.2 0.76 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71101 S-31989—Rev. C, 13-Oct-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
54 87 34
Maximum
62.5 105 45
Unit
_C/W
1
Si4947ADY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 3.9 A VGS = - 4.5 V, ID = - 3.0 A VDS = - 15 V, ID = - 2.5 A IS = - 1.7 A, VGS = 0 V - 15 0.062 0.105 5.0 - 0.82 - 1.2 0.080 0.135 - 1.0 "100 -1 - 10 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.7 A, di/dt = 100 A/ms VDD = - 10 V, RL = 10 W V, ID ^ - 1 A, VGEN = - 10 V, RG = 6 W VDS = - 10 V, VGS = - 5 V, ID = - 3.9 A 5.8 2 1.9 8 9 21 10 27 15 18 40 20 40 ns 8 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 VGS = 10 thru 6 V 16 I D - Drain Current (A) I D - Drain Current (A) 5V 12 16 20 TC = - 55_C 25_C 125_C
Transfer Characteristics
12
8
4V
8
4 2V 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 3V
4
0 0 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V)
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Document Number: 71101 S-31989—Rev. C, 13-Oct-03
Si4947ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.30 r DS(on) - On-Resistance ( W ) 1000
Capacitance
C - Capacitance (pF)
0.24
800 Ciss 600
0.18 VGS = 4.5 V 0.12 VGS = 10 V 0.06
400 Coss
200 Crss
0.00 0 3 6 9 12 15
0 0 6 12 18 24 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 3.9 A 8 1.8 1.6 1.4 1.2 1.0 0.8 0.6 - 50
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 3.9 A
6
4
2
0 0 2 4 6 8 10 Qg - Total Gate Charge (nC)
r DS(on) - On-Resistance (W ) (Normalized)
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30 0.40
On-Resistance vs. Gate-to-Source Voltage
10
r DS(on) - On-Resistance ( W )
TJ = 150_C I S - Source Current (A)
0.32
0.24
ID = 3.9 A
0.16
TJ = 25_C
0.08
1 0.0
0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71101 S-31989—Rev. C, 13-Oct-03
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Si4947ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.8 0.6 V GS(th) Variance (V) ID = 250 mA 0.4 0.2 0.0 - 0.2 - 0.4 - 50 6 Power (W) 18 30
Single Pulse Power, Junction-to-Ambient
24
12
- 25
0
25
50
75
100
125
150
0 10 -2
10 -1
1 Time (sec)
10
100
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec)
Notes: PDM t1 t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 87_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.02 0.05
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10
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Document Number: 71101 S-31989—Rev. C, 13-Oct-03
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