SI4948BEY-E3

Si4948BEY New Product Vishay Siliconix Dual P-Channel 60-V (D-S) 175_ MOSFET PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) 0.120 @ VGS = −10 V 0.150 @ VGS = −4.5 V ID (A) −3.1 −2.8 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 Ordering Information: Si4948BEY—E3 (Lead Free) Si4948BEY -T1—E3 (Lead Free with Tape and Reel) P-Channel MOSFET D2 P-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0 1 mH 0.1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs −60 "20 −3.1 −2.6 −25 −2 15 11 2.4 1.7 Steady State Unit V −2.4 −2.0 A −1.1 mJ 1.4 0.95 W _C −55 to 175 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72847 S-40430—Rev. A, 15-Mar-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 53 85 30 Maximum 62.5 110 37 Unit _C/W 1 Si4948BEY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −60 V, VGS = 0 V VDS = −60 V, VGS = 0 V, TJ = 70_C VDS = −5 V, VGS = −10 V VGS = −10 V, ID = −3.1 A VGS = −4.5 V, ID = −0.2 A VDS = −15 V, ID = −3.1 A IS = −2 A, VGS = 0 V −25 0.100 0.126 8.5 −0.8 −1.2 0.120 0.150 W S V −1 −3 "100 −1 −10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −2 A, di/dt = 100 A/ms VDD = −30 V, RL = 30 W V, ID ^ −1 A, VGEN = −10 V, Rg = 6 W f = 1 MHz VDS = −30 V, VGS = −10 V, ID = −3.1 A 14.5 2.2 3.7 14 10 15 50 35 30 15 22 75 55 50 ns W 22 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 25 VGS = 10 thru 5 V 20 I D − Drain Current (A) I D − Drain Current (A) 20 25 Transfer Characteristics 15 4V 10 15 10 TC = 125_C 25_C 0 5 3V 0 0 1 2 3 4 5 6 7 8 VDS − Drain-to-Source Voltage (V) 5 −55_C 3 4 5 6 0 1 2 VGS − Gate-to-Source Voltage (V) Document Number: 72847 S-40430—Rev. A, 15-Mar-04 www.vishay.com 2 Si4948BEY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.40 r DS(on) − On-Resistance ( W ) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 5 10 15 20 25 0 0 Crss 10 20 30 40 50 60 VGS = 4.5 V VGS = 10 V C − Capacitance (pF) 800 Ciss 1000 Vishay Siliconix Capacitance 600 400 200 Coss ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 30 V ID = 3.1 A 8 rDS(on) − On-Resiistance (Normalized) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 0 3 6 9 12 15 Qg − Total Gate Charge (nC) 0.6 −50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.1 A 6 4 2 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S − Source Current (A) 10 r DS(on) − On-Resistance ( W ) 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 On-Resistance vs. Gate-to-Source Voltage ID = 3.1 A TJ = 25_C 1 0.0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72847 S-40430—Rev. A, 15-Mar-04 www.vishay.com 3 Si4948BEY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 50 Single Pulse Power 0.4 V GS(th) Variance (V) ID = 250 mA 40 Power (W) 0.2 30 0.0 20 −0.2 10 −0.4 −50 −25 0 25 50 75 100 125 150 0 10−3 10−2 10−1 1 10 100 600 TJ − Temperature (_C) Time (sec) 100 Safe Operating Area, Junction-to-Case IDM Limited Limited by rDS(on) 10 I D − Drain Current (A) P(t) = 0.0001 1 ID(on) Limited 0.1 TA = 25_C Single Pulse BVDSS Limited 1 10 P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 100 0.01 0.1 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72847 S-40430—Rev. A, 15-Mar-04 Si4948BEY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Vishay Siliconix Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72847 S-40430—Rev. A, 15-Mar-04 www.vishay.com 5