SI4948EY

Si4948EY Vishay Siliconix Dual P-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) 0.120 @ VGS = –10 V 0.150 @ VGS = –4.5 V ID (A) "3.1 "2.8 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –60 "20 "3.1 "2.6 "30 –2.0 2.4 Unit V A W 1.7 –55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70166 S-99444—Rev. E, 29-Nov-99 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 62.5 Unit _C/W 2-1 Si4948EY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb On Resistance Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –60 V, VGS = 0 V VDS = –60 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –10 V VGS = –10 V, ID = –3.1 A VGS = –4.5 V, ID = –2.8 A VDS = –15 V, ID = –3.1 A IS = –2.0 A, VGS = 0 V –20 0.100 0.125 7.5 –0.8 –1.2 0.120 0.150 –1 "100 –2 –25 V nA mA A W S V Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –2.0 A, di/dt = 100 A/ms VDD = –30 V, RL = 30 W V, 30 ID ^ –1 A, VGEN = –10 V RG = 6 W A V, VDS = –30 V, VGS = –10 V ID = –3.1 A V V, 31 16 4 1.6 8 10 35 12 60 15 20 50 25 90 ns 25 nC C Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70166 S-99444—Rev. E, 29-Nov-99 Si4948EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 6 V 24 I D – Drain Current (A) I D – Drain Current (A) 5V 18 16 20 TC = –55_C 25_C Transfer Characteristics 12 150_C 12 4V 8 6 3V 0 0 1 2 3 4 5 6 4 0 0 1 2 3 4 5 6 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.0 1400 1200 r DS(on)– On-Resistance ( W ) 0.8 C – Capacitance (pF) 1000 800 600 400 Coss 200 0 0 4 8 12 16 20 0 0 10 Crss Capacitance Ciss 0.6 0.4 VGS = 4.5 V 0.2 VGS = 10 V 20 30 40 50 60 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 10 VDS = 30 V ID = 3.1 A V GS – Gate-to-Source Voltage (V) Gate Charge 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.1 A 6 r DS(on)– On-Resistance ( W ) (Normalized) 0 4 8 12 16 20 8 1.6 1.2 4 0.8 2 0.4 0 0 –50 –25 0 25 50 75 100 125 150 175 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 Document Number: 70166 S-99444—Rev. E, 29-Nov-99 2-3 Si4948EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.5 On-Resistance vs. Gate-to-Source Voltage 10 I S – Source Current (A) TJ = 175_C r DS(on)– On-Resistance ( W ) 0.4 0.3 ID = 3.1 A 0.2 TJ = 25_C 0.1 1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.75 Single Pulse Power 50 TC = 25_C Single Pulse 40 0.50 V GS(th) Variance (V) 30 0.25 ID = 250 mA Power (W) 20 0.00 10 –0.25 –50 0 –25 0 25 50 75 100 125 150 175 0.01 0.1 1 Time (sec) 10 30 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70166 S-99444—Rev. E, 29-Nov-99