SI4953DY

Si4953DY Vishay Siliconix Dual P-Channel 30-V(D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 FEATURES D 100% Rg Tested ID (A) - 4.9 - 3.6 rDS(on) (W) 0.053 @ VGS = - 10 V 0.095 @ VGS = - 4.5 V S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 Ordering Information: Si4953DY Si4953DY-T1 (with Tape and Reel) D1 D2 D2 8 7 6 5 D1 D1 D2 D2 G1 G2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS Symbol VDS VGS Limit - 30 "20 - 4.9 - 3.9 - 30 - 1.7 2.0 1.3 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com Document Number: 70153 S-31726—Rev. E, 18-Aug-03 www.vishay.com Symbol RthJA Limit 62.5 Unit _C/W 1 Si4953DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Drain Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 55_C VDS v - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 4.9 A VGS = - 4.5 V, ID = - 3.6 A VDS = - 15 V, ID = - 4.9 A IS = - 1.7 A, VGS = 0 V - 20 0.043 0.070 10 0.8 - 1.2 0.053 0.095 -1 "100 -1 - 25 V nA mA A W S V Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = - 1.7 A, di/dt = 100 A/ms VDD = - 15 V, RL = 15 W V, ID ^ - 1 A, VGEN = - 10 V, RG = 6 W 2 9 13 25 15 60 VDS = - 15 V, VGS = - 10 V, ID = - 4.9 A 16 5 2 7.1 15 20 40 25 90 ns W 25 nC Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70153 S-31726—Rev. E, 18-Aug-03 Si4953DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10, 9, 8, 7, 6 V 24 I D - Drain Current (A) 5V I D - Drain Current (A) 24 30 TC = - 55_C 25_C 125_C 18 Transfer Characteristics 18 12 4V 12 6 2, 1 V 0 0.0 3V 6 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 1500 Capacitance r DS(on) - On-Resistance ( Ω ) 0.16 C - Capacitance (pF) 1200 Ciss 0.12 VGS = 4.5 V 900 0.08 VGS = 10 V 600 Coss 0.04 300 Crss 0.00 0 6 12 18 24 30 ID - Drain Current (A) 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Gate Charge 10 VDS = 15 V ID = 4.9 A 1.75 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 6 r DS(on) - On-Resistance ( Ω ) (Normalized) 8 1.50 VGS = 10 V ID = 4.9 A 1.25 4 1.00 2 0.75 0 0 4 8 12 16 20 0.50 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70153 S-31726—Rev. E, 18-Aug-03 www.vishay.com 3 Si4953DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.75 On-Resistance vs. Gate-to-Source Voltage 10 I S - Source Current (A) TJ = 150_C r DS(on) - On-Resistance ( Ω ) 0.60 0.45 ID = 4.9 A TJ = 25_C 0.30 0.15 1 0.3 0.5 0.7 0.9 1.1 1.3 0.00 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.7 50 Single Pulse Power 0.5 V GS(th) Variance (V) ID = 250 µA Power (W) 0.3 40 30 0.1 20 - 0.1 10 - 0.3 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.10 1.00 Time (sec) 10.00 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 2. Per Unit Base = RthJA = 62.5_C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70153 S-31726—Rev. E, 18-Aug-03