SI4955DY

Si4955DY New Product Vishay Siliconix Assymetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) Channel Channel-1 −30 FEATURES rDS(on) (W) 0.054 @ VGS = −10 V 0.100 @ VGS = −4.5 V 0.027 @ VGS = −4.5 V 0.035 @ VGS = −2.5 V 0.048 @ VGS = −1.8 V ID (A) −5.0 −3.7 −7.0 −6.2 −5.2 D TrenchFETr Power MOSFETs D Low Gate Drive (2.5 V) Capability For Channel 2 APPLICATIONS D Game Station − Load Switch Channel-2 −20 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4955DY—E3 Si4955DY-T1—E3 (with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 G1 S1 S2 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Channel-2 10 secs Steady State −20 "8 Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −30 "20 Unit V −5.0 −4.0 −3.8 −3.0 −20 −7.0 −5.6 −5.3 −4.2 A −1.7 2.0 1.3 −0.9 1.1 0.7 −55 to 150 −1.7 2 1.3 −0.9 1.1 0.7 W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Channel-1 Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72241 S-32411—Rev. B, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State Channel-2 Typ 58 91 34 Symbol RthJA RthJF Typ 55 90 33 Max 62.5 110 40 Max 62.5 110 40 Unit _C/W 1 Si4955DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = 0 V, VGS = "8 V VDS = −24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = −16 V, VGS = 0 V VDS = −24 V, VGS = 0 V, TJ = 85_C VDS = −16 V, VGS = 0 V, TJ = 85_C On-State On State Drain Currenta ID( ) D(on) VDS w −5 V, VGS = −10 V VDS p −5 V, VGS = −10 V VGS = −10 V, ID = −5.0 A Drain-Source On-State Drain Source On State Resistancea VGS = −4.5 V, ID = −7.0 A rDS(on) VGS = −4.5 V, ID = −3.7 A VGS = −2.5 V, ID = −6.2 A VGS = −1.8 V, ID = −3 A Forward Transconductancea gf fs VSD VDS = −15 V, ID = −5.0 A VDS = −15 V, ID = −3 A IS = −1.7 A, VGS = 0 V IS = −1.7 A, VGS = 0 V Ch 1 Ch 2 Ch 1 Ch 2 Ch 1 Ch 2 Ch 1 Ch 2 Ch 1 Ch 2 Ch 1 Ch 2 Ch 1 Ch 2 Ch 2 Ch 1 Ch 2 Ch 1 Ch 2 −20 −20 0.044 0.022 0.082 0.029 0.039 10 25 −0.80 −0.80 −1.2 −1.2 0.054 0.027 0.100 0.035 0.048 S W −1.0 −0.4 −3 −1 "100 "100 −1 −1 −5 −5 A mA V Symbol Test Condition Min Typ Max Unit Gate-Body Gate Body Leakage IGSS nA Diode Forward Voltagea V Dynamicb Total Gate Charge otal Gate Charge Qg Channel-1 Channel-1 VDS = −15 V, VGS = −10 V, ID = −5.0 A Channel-2 VDS = −10 V VGS = −4 5 V ID = −7 A V, 4.5 V, Ch 1 Ch 2 Ch 1 Ch 2 Ch 1 Ch 2 Ch 1 Ch 2 Channel-1 VDD = −15 V, RL = −15 W ID ^ −1 A, VGEN = −10 V, RG = 6 W Channel-2 VDD = −10 V, RL = 10 W V 10 ID ^ −1 A, VGEN = −4.5 V, RG = 6 W A, 4.5 V, Ch 1 Ch 2 Ch 1 Ch 2 Ch 1 Ch 2 IF = −1.7 A, di/dt = 100 A/ms IF = −1.7 A, di/dt = 100 A/ms Ch 1 Ch 2 12.5 21 2.1 2.6 3.5 6.0 7 20 10 40 30 125 22 85 25 64 15 30 15 60 45 190 35 130 60 90 ns 19 25 nC nC Gate-Source Gate Source Charge Qgs Qgd d td( ) d(on) tr td( ff) d(off) tf trr Gate-Drain Gate Drain Charge Turn-On Turn On Delay Time Rise Time Turn-Off Turn Off Delay Time Fall Time Source-Drain Reverse Recovery Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72241 S-32411—Rev. B, 24-Nov-03 Si4955DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 5 V 16 I D − Drain Current (A) I D − Drain Current (A) 16 20 Vishay Siliconix CHANNEL 1 Transfer Characteristics 12 4V 12 8 8 4 3V 0 0 1 2 3 4 5 6 VDS − Drain-to-Source Voltage (V) 4 TC = 125_C 25_C −55_C 0 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) 0.20 r DS(on) − On-Resistance ( W ) On-Resistance vs. Drain Current 1000 Capacitance C − Capacitance (pF) 0.16 800 Ciss 0.12 VGS = 4.5 V 0.08 VGS = 10 V 0.04 600 400 Coss 200 Crss 0.00 0 4 8 12 16 20 0 0 6 12 18 24 30 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 5.0 V 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5.0 V 8 r DS(on) − On-Resistance (W ) (Normalized) 4 6 8 10 12 14 1.4 6 1.2 4 1.0 2 0.8 0 0 2 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Document Number: 72241 S-32411—Rev. B, 24-Nov-03 www.vishay.com 3 Si4955DY Vishay Siliconix New Product CHANNEL 1 On-Resistance vs. Gate-to-Source Voltage 0.20 TJ = 150_C r DS(on) − On-Resistance ( W ) 0.16 ID = 2 A 0.12 ID = 5 A I S − Source Current (A) TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 10 0.08 TJ = 25_C 0.04 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) 0.6 Threshold Voltage 30 Single Pulse Power 0.4 V GS(th) Variance (V) ID = 250 mA Power (W) 0.2 25 20 15 10 0.0 −0.2 5 −0.4 −50 0 10−3 −25 0 25 50 75 100 125 150 10−2 10−1 1 10 100 600 TJ − Temperature (_C) Time (sec) Safe Operating Area 100 rDS(on) Limited IDM Limited P(t) = 0.0001 I D − Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) P(t) = 10 dc 0.1 www.vishay.com 4 Document Number: 72241 S-32411—Rev. B, 24-Nov-03 Si4955DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Vishay Siliconix CHANNEL 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 20 CHANNEL 2 20 Output Characteristics Transfer Characteristics 16 I D − Drain Current (A) VGS = 5 thru 2 V 16 I D − Drain Current (A) 12 1.5 V 8 12 8 TC = 125_C 4 25_C −55_C 4 1V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 0 0.0 0.4 0.8 1.2 1.6 2.0 VGS − Gate-to-Source Voltage (V) www.vishay.com Document Number: 72241 S-32411—Rev. B, 24-Nov-03 5 Si4955DY Vishay Siliconix New Product CHANNEL 2 Capacitance 3000 2500 C − Capacitance (pF) 2000 1500 1000 500 Crss 0.00 0 4 8 12 16 20 0 0 4 8 12 16 20 Coss Ciss TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) − On-Resistance ( W ) 0.08 0.06 VGS = 1.8 V VGS = 2.5 V 0.04 0.02 VGS = 4.5 V ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 7 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 7 A 1.4 3 r DS(on) − On-Resistance (W ) (Normalized) 8 12 16 20 24 1.2 2 1.0 1 0.8 0 0 4 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.10 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) 10 r DS(on) − On-Resistance ( W ) 0.08 0.06 ID = 7 A TJ = 150_C TJ = 25_C 0.04 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72241 S-32411—Rev. B, 24-Nov-03 www.vishay.com 6 Si4955DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) ID = 250 mA Power (W) 0.2 0.1 0.0 −0.1 −0.2 −50 20 30 Vishay Siliconix CHANNEL 2 Single Pulse Power 25 15 10 5 0 10−3 −25 0 25 50 75 100 125 150 10−2 10−1 1 10 100 600 TJ − Temperature (_C) Time (sec) Safe Operating Area 100 rDS(on) Limited P(t) = 0.0001 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) P(t) = 1 P(t) = 10 dc IDM Limited I D − Drain Current (A) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 10 0.1 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 91_C/W Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Document Number: 72241 S-32411—Rev. B, 24-Nov-03 www.vishay.com 7 Si4955DY Vishay Siliconix New Product CHANNEL 2 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 8 Document Number: 72241 S-32411—Rev. B, 24-Nov-03