SI4963BDY-T1

Si4963BDY New Product Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) 0.032 @ VGS = −4.5 V 0.050 @ VGS = −2.5 V ID (A) −6.5 −5.2 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 Ordering Information: Si4963BDY—E3 (Lead Free) Si4963BDY-T1—E3 (Lead Free with Tape and Reel) P-Channel MOSFET D2 P-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −20 "12 Unit V −6.5 −5.2 −40 −1.7 2.0 1.3 −55 to 150 −4.9 −3.9 A −0.9 1.1 0.7 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72753 S-40235—Rev. A, 16-Feb-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 58 91 34 Maximum 62.5 110 40 Unit _C/W 1 Si4963BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "12 V VDS = −20 V, VGS = 0 V VDS = −20 V, VGS = 0 V, TJ = 55_C VDS v −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −6.5 A VGS = −2.5 V, ID = −2 A VDS = −10 V, ID = −6.5 A IS = −1.7 A, VGS = 0 V −20 0.025 0.040 18 −0.75 −1.2 0.032 0.050 −0.6 −1.4 "100 −1 −5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −1.7 A, di/dt = 100 A/ms VDD = −10 V, RL = 10 W V, ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W f = 1 MHz VDS = −10 V, VGS = −4.5 V, ID = −6.5 A 14 2.6 4.6 8.3 30 40 80 55 40 45 60 120 85 80 ns W 21 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 5 thru 3.5 V 32 I D − Drain Current (A) I D − Drain Current (A) 3V 32 40 Transfer Characteristics TC = −55_C 25_C 125_C 24 24 2.5 V 16 2V 1.5 V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 16 8 8 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 72753 S-40235—Rev. A, 16-Feb-04 www.vishay.com 2 Si4963BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) − On-Resistance ( W ) 2000 Vishay Siliconix Capacitance C − Capacitance (pF) 0.08 1600 Ciss 0.06 VGS = 2.5 V 1200 0.04 VGS = 4.5 V 0.02 800 Coss 400 Crss 0.00 0 8 16 24 32 40 0 0 4 8 12 16 20 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 6.5 A 4 rDS(on) − On-Resiistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 6.5 A 3 1.2 2 1.0 1 0.8 0 0 2 4 6 8 10 12 14 16 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.10 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) − On-Resistance ( W ) 0.08 ID = 2 A ID = 6.5 A 0.04 I S − Source Current (A) 0.06 TJ = 25_C 0.02 1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72753 S-40235—Rev. A, 16-Feb-04 www.vishay.com 3 Si4963BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.5 0.4 0.3 0.2 0.1 0.0 −0.1 −0.2 −50 Power (W) ID = 250 mA Threshold Voltage 30 25 20 Single Pulse Power VGS(th) Variance (V) 15 10 5 −25 0 25 50 75 100 125 150 0 10−2 10−1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 Safe Operating Area rDS(on) Limited IDM Limited P(t) = 0.0001 10 I D − Drain Current (A) P(t) = 0.001 1 ID(on) Limited TA = 25_C Single Pulse BVDSS Limited 1 10 100 P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 P(t) = 10 dc 0.01 0.1 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 91_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72753 S-40235—Rev. A, 16-Feb-04 Si4963BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72753 S-40235—Rev. A, 16-Feb-04 www.vishay.com 5