SI4963BDY

Click Here & Upgrade PDF Complete Documents Expanded Features Unlimited Pages SPICE Device Model Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 72770 20-May-04 www.vishay.com 1 Click Here & Upgrade PDF Complete SPICE Device Model Si4963BDY Vishay Siliconix Documents Expanded Features Unlimited Pages SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current b Symbol Test Conditions Simulated Data Measured Data Unit VGS(th) ID(on) b VDS = VGS, ID = −250 µA VDS = −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −6.5 A VGS = −2.5 V, ID = −2 A VDS = −10 V, ID = −6.5 A IS = −1.7 A, VGS = 0 V 1.1 92 0.025 0.041 16 −0.80 0.025 0.040 18 −0.75 V A Ω S V Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage b b rDS(on) gfs VSD Dynamic a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = −10 V, RL = 10 Ω ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω VDS = −10 V, VGS = −4.5 V, ID = − 6.5 A 12 2.6 4.6 30 22 65 20 14 2.6 4.6 25 30 70 50 ns nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. www.vishay.com 2 Document Number: 72770 20-May-04 Click Here & Upgrade PDF Complete Documents Expanded Features Unlimited Pages SPICE Device Model Si4963BDY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED) Document Number: 72770 20-May-04 www.vishay.com 3