SI4965DY-T1

Si4965DY Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) 0.021 @ VGS = - 4.5 V 0.027 @ VGS = - 2.5 V 0.040 @ VGS = - 1.8 V ID (A) - 8.0 - 7.0 - 5.8 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4965DY Si4965DY-T1 (with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage a, Continuous Drain Current Continuous Drain Current (TJ = 150_C)a, b Symbol VDS VGS TA = 25_C TA = 70_C ID IDM IS TA = 25_C TA = 70_C PD TJ, Tstg Limit -8 "8 - 8.0 - 6.4 - 30 - 1.7 2.0 1.3 - 55 to 150 Unit V Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70826 S-31989—Rev. B, 13-Oct-03 www.vishay.com t v 10 sec Steady State Symbol RthJA Typical 93 Maximum 62.5 Unit _C/W 1 Si4965DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 8 V, VGS = 0 V VDS = - 8 V, VGS = 0 V, TJ = 70_C VDS w - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 8.0 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 7.0 A VGS = - 1.8 V, ID = - 5.8 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 5 V, ID = - 8.0 A IS = - 1.7 A, VGS = 0 V - 20 0.0175 0.022 0.031 27 - 1.2 0.021 0.027 0.040 S V W - 0.45 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.7 A, di/dt = 100 A/ms VDD = - 4 V, RL = 4 W V, ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 4 V, VGS = - 4.5 V, ID = - 8.0 A 36 7.5 5.0 35 45 170 90 60 70 90 340 180 90 ns 55 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 70826 S-31989—Rev. B, 13-Oct-03 Si4965DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 30 Output Characteristics VGS = 5 thru 2.5 V 30 2V 24 Transfer Characteristics TC = - 55_C 24 I D - Drain Current (A) I D - Drain Current (A) 25_C 18 18 125_C 12 1.5 V 6 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 12 6 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 0.08 On-Resistance vs. Drain Current 7000 6000 Capacitance r DS(on) - On-Resistance ( W ) C - Capacitance (pF) 0.06 VGS = 1.8 V 0.04 VGS = 2.5 V 0.02 VGS = 4.5 V 0.00 0 6 12 18 24 30 Ciss 5000 4000 3000 2000 1000 Crss 0 0 2 4 6 8 Coss ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 5 V GS - Gate-to-Source Voltage (V) VDS = 4 V ID = 8.0 A Gate Charge 1.5 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 8.0 A r DS(on) - On-Resistance (W ) (Normalized) 4 1.2 3 2 0.9 1 0 0 8 16 24 32 40 Qg - Total Gate Charge (nC) Document Number: 70826 S-31989—Rev. B, 13-Oct-03 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si4965DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 0.08 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) TJ = 150_C I S - Source Current (A) 10 0.06 ID = 8.0 A 0.04 TJ = 25_C 0.02 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.00 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) 0.2 Power (W) 0.1 0.0 - 0.1 - 0.2 - 50 ID = 250 mA 30 25 Single Pulse Power 20 15 10 5 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 t2 1. Duty Cycle, D = 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 2. Per Unit Base = RthJA = 93_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 70826 S-31989—Rev. B, 13-Oct-03 4