SI4971DY

Si4971DY New Product Vishay Siliconix Dual P-Channel 25-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 0.033 @ VGS = - 6 V - 6.4 FEATURES ID (A) - 7.2 rDS(on) (W) 0.026 @ VGS = - 10 V D TrenchFETr Power MOSFET D 25-V VGS Provides Extra Head Room for Safe Operation APPLICATIONS D Notebook - Load Switch - Battery Charger Switch S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4971DY Si4971DY-T1 (with Tape and Reel) D1 P-Channel MOSFET D2 P-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 5.7 IDM IS - 1.7 2.0 1.3 - 55 to 150 - 30 - 0.9 1.1 0.7 W _C - 4.3 A Symbol VDS VGS 10 secs Steady State - 30 "25 Unit V - 7.2 - 5.4 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 ” x 1” FR4 Board. Document Number: 72174 S-03598—Rev. A, 31-Mar-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 46 80 24 Maximum 62.5 110 32 Unit _C/W 1 Si4971DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = 0 V, VGS = "25 V VDS = - 24 V, VGS = 0 V VDS = - 24 V, VGS = 0 V, TJ = 55_C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 7.2 A VGS = - 6 V, ID = - 6.4 A VDS = - 10 V, ID = - 7.2 A IS = - 1.7 A, VGS = 0 V - 30 0.021 0.025 18 - 0.8 - 1.2 0.026 0.033 -1 -3 "100 nA "200 -1 - 25 mA A W S V V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.7 A, di/dt = 100 A/ms VDD = - 15 V, RL = 15 W V, ID ^ - 1 A, VGEN = - 10 V, RG = 6 W VDS = - 15 V, VGS = - 10 V, ID = - 7.2 A 30 5.1 8.9 11 15 75 60 75 17 25 120 90 110 ns 45 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Transfer Characteristics 18 4V 18 12 12 TC = 125_C 6 6 3V 0 0 1 2 3 4 5 25_C 0 0.0 - 55_C 2.5 3.0 3.5 4.0 4.5 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72174 S-03598—Rev. A, 31-Mar-03 www.vishay.com 2 Si4971DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.05 r DS(on) - On-Resistance ( W ) 2000 Vishay Siliconix Capacitance C - Capacitance (pF) 0.04 1600 Ciss 1200 0.03 VGS = 6 V VGS = 10 V 0.02 800 Coss Crss 0.01 400 0.00 0 6 12 18 24 30 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 7.2 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.2 A 1.4 6 r DS(on) - On-Resistance (W ) (Normalized) 10 20 30 1.2 4 1.0 2 0.8 0 0 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.08 0.06 ID = 7.2 A TJ = 25_C 0.04 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72174 S-03598—Rev. A, 31-Mar-03 www.vishay.com 3 Si4971DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 50 Single Pulse Power 0.4 V GS(th) Variance (V) ID = 250 mA 40 0.2 Power (W) 30 0.0 20 - 0.2 10 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-to-Ambient 100 rDS(on) Limited IDM Limited 10 I D - Drain Current (A) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 TA = 25_C Single Pulse P(t) = 1 P(t) = 10 dc BVDSS Limited 1 10 100 0.01 0.1 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72174 S-03598—Rev. A, 31-Mar-03 Si4971DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72174 S-03598—Rev. A, 31-Mar-03 www.vishay.com 5