SI5402BDC_08

Si5402BDC New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES D TrenchFETr Power MOSFET ID (A) 6.7 6.1 rDS(on) (W) 0.035 @ VGS = 10 V 0.042 @ VGS = 4.5 V 1206-8 ChipFETr 1 D D D D S D D G D G Marking Code AD XXX Lot Traceability and Date Code Part # Code S N-Channel MOSFET Bottom View Ordering Information: Si5402BDC-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs 30 "20 6.7 4.8 20 2.1 2.5 1.3 Steady State Unit V 4.9 3.5 A 1.1 1.3 0.7 −55 to 150 260 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 80 18 Maximum 50 95 22 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73051 S-41495—Rev. A, 09-Jun-04 www.vishay.com 1 Si5402BDC Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 4.9 A VGS = 4.5 V, ID = 4.4 A VDS = 10 V, ID = 4.9 A IS = 1.1 A, VGS = 0 V 20 0.029 0.035 19 0.8 1.2 0.035 0.042 1.0 3.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.1 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 4.9 A 10 1.9 1.6 14 10 10 27 10 20 15 15 40 15 60 ns W 20 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 4 V 16 I D − Drain Current (A) I D − Drain Current (A) 16 20 Transfer Characteristics 12 12 8 8 TC = 125_C 4 25_C 0 0.0 −55_C 3.0 3.5 4.0 4 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.0 1.5 2.0 2.5 VDS − Drain-to-Source Voltage (V) www.vishay.com VGS − Gate-to-Source Voltage (V) Document Number: 73051 S-41495—Rev. A, 09-Jun-04 2 Si5402BDC New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.05 r DS(on) − On-Resistance ( W ) 800 700 C − Capacitance (pF) 0.04 VGS = 4.5 V 0.03 VGS = 10 V Ciss 600 500 400 300 200 100 0.00 0 4 8 12 16 20 0 0 5 10 15 20 25 30 Coss Vishay Siliconix Capacitance 0.02 0.01 Crss ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 4.9 A 8 rDS(on) − On-Resiistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 4.9 A 6 1.2 4 1.0 2 0.8 0 0 2 4 6 8 10 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S − Source Current (A) 10 r DS(on) − On-Resistance ( W ) 0.08 0.10 On-Resistance vs. Gate-to-Source Voltage 0.06 ID = 4.9 A 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 73051 S-41495—Rev. A, 09-Jun-04 www.vishay.com 3 Si5402BDC Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 V GS(th) Variance (V) −0.0 −0.2 −0.4 −0.6 −0.8 −1.0 −50 0 10−2 40 ID = 250 mA Power (W) 30 50 Single Pulse Power 20 10 −25 0 25 50 75 100 125 150 10−1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 Safe Operating Area IDM Limited rDS(on) Limited 10 I D − Drain Current (A) P(t) = 0.0001 1 ID(on) Limited TA = 25_C Single Pulse BVDSS Limited P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 0.1 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80_C/W t1 t2 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 73051 S-41495—Rev. A, 09-Jun-04 Si5402BDC New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 73051 S-41495—Rev. A, 09-Jun-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1