Si5404DC
Vishay Siliconix
N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.030 @ VGS = 4.5 V 0.045 @ VGS = 2.5 V
ID (A)
7.2 5.9
1206-8 ChipFETr
1
D D D D S D D G
D
G Marking Code AB XX Lot Traceability and Date Code
Bottom View
Part # Code
S N-Channel MOSFET
Ordering Information: Si5404DC-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
20 "12 7.2 5.2 20 2.1 2.5 1.3
Steady State
Unit
V
5.2 3.8 A
1.1 1.3 0.7 - 55 to 150 260 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t v 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
40 80 15
Maximum
50 95 20
Unit
_C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71057 S-31989—Rev. C, 13-Oct-03 www.vishay.com
1
Si5404DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 5.2 A VGS = 2.5 V, ID = 4.3 A VDS = 10 V, ID = 5.2 A IS = 1.1 A, VGS = 0 V 20 0.025 0.038 20 0.8 1.2 0.030 0.045 0.6 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.1 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 5.2 A 12 2.4 3.2 20 40 40 15 30 30 60 60 23 60 ns 18 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 VGS = 5 thru 3 V 16 I D - Drain Current (A) I D - Drain Current (A) 2.5 V 16 20
Transfer Characteristics
12
12
8 2V 4 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
8 TC = 125_C 4 25_C 0 0.0 - 55_C 1.5 2.0 2.5 3.0
0.5
1.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
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Document Number: 71057 S-31989—Rev. C, 13-Oct-03
Si5404DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.06 r DS(on) - On-Resistance ( W ) 0.05 VGS = 2.5 V 0.04 0.03 0.02 0.01 0.00 0 4 8 12 16 20 C - Capacitance (pF) 1800 1500 1200 900 600 300 Crss 0 0 4 8 12 16 20 Coss Ciss
Capacitance
VGS = 4.5 V
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) VDS = 10 V ID = 5.2 A 1.6
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 5.2 A 1.4
r DS(on) - On-Resistance (W ) (Normalized)
1.2
1.0
0.8
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20 TJ = 150_C I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.06 0.05
On-Resistance vs. Gate-to-Source Voltage
ID = 5.2 A 0.04 0.03 0.02 0.01 0.00
TJ = 25_C
1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Document Number: 71057 S-31989—Rev. C, 13-Oct-03
www.vishay.com
3
Si5404DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 50
Single Pulse Power
0.2 V GS(th) Variance (V)
40 ID = 250 mA Power (W) 30
- 0.0
- 0.2
20
- 0.4
10
- 0.6 - 50
- 25
0
25
50
75
100
125
150
0 10 -3
10 -2
10 -1
1
10
100
600
TJ - Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec)
Notes: PDM t1 t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 80_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10
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Document Number: 71057 S-31989—Rev. C, 13-Oct-03
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