SI5433DC

Si5433DC Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.040 @ VGS = --4.5 V --20 0.052 @ VGS = --2.5 V 0.072 @ VGS = --1.8 V ID (A) --6.7 --5.9 --5.0 S 1206-8 ChipFETt 1 D D D D S D D G G Marking Code BD XX Lot Traceability and Date Code D P-Channel MOSFET Part # Code Bottom View Ordering Information: Si5433DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a on nuous ra urren Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipation Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State --20 8 Unit V --6.7 --4.8 --20 --2.1 2.5 1.3 --55 to 150 260 --4.8 --3.5 A --1.1 1.3 0.7 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C / C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71233 S-21251—Rev. B, 05-Aug-02 www.vishay.com 2-1 Si5433DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS DSS ID(on) VDS = VGS, ID = --250 mA VDS = 0 V, VGS = 8 V VDS = --16 V, VGS = 0 V VDS = --16 V, VGS = 0 V, TJ = 85_C VDS  --5 V, VGS = --4.5 V VGS = --4.5 V, ID = --4.8 A Drain-Source On-State Resistancea rDS(on) DS(on) VGS = --2.5 V, ID = --4.2 A VGS = --1.8 V, ID = --1 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = --10 V, ID = --4.8 A IS = --1.1 A, VGS = 0 V --20 0.036 0.045 0.062 15 --0.8 --1.2 0.040 0.052 0.072 S V Ω --0.45 100 --1 --5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = --1.1 A, di/dt = 100 A/ms VDD = -- 10 V, RL = 10 Ω --10 10 ID ≅ --1 A, VGEN = --4.5 V, RG = 6 Ω VDS = --10 V, VGS = --4.5 V, ID = --4.8 A 15 3.6 2.5 22 29 94 54 30 35 45 140 80 60 ns 22 nC Notes a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2.5 V 16 I D -- Drain Current (A) I D -- Drain Current (A) 2V 12 16 20 Transfer Characteristics TC = --55_C 25_C 12 125_C 8 1.5 V 4 8 4 0 0 1 2 3 4 VDS -- Drain-to-Source Voltage (V) www.vishay.com 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS -- Gate-to-Source Voltage (V) Document Number: 71233 S-21251—Rev. B, 05-Aug-02 2-2 Si5433DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.12 r DS(on) -- On-Resistance ( Ω ) 2500 Ciss Capacitance 0.09 VGS = 1.8 V VGS = 2.5 V C -- Capacitance (pF) 2000 1500 0.06 VGS = 4.5 V 0.03 1000 500 Coss Crss 0.00 0 4 8 12 16 20 0 0 4 8 12 16 20 ID -- Drain Current (A) VDS -- Drain-to-Source Voltage (V) Gate Charge 5 V GS -- Gate-to-Source Voltage (V) VDS = 10 V ID = 4.8 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 4.8 A 1.4 3 r DS(on) -- On-Resistance (Ω ) (Normalized) 6 9 12 15 1.2 2 1.0 1 0.8 0 0 3 Qg -- Total Gate Charge (nC) 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S -- Source Current (A) 10 r DS(on) -- On-Resistance ( Ω ) 0.09 0.12 On-Resistance vs. Gate-to-Source Voltage ID = 4.8 A 0.06 TJ = 25_C 0.03 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V) Document Number: 71233 S-21251—Rev. B, 05-Aug-02 www.vishay.com 2-3 Si5433DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 0.1 0.0 --0.1 --0.2 --50 10 Power (W) 30 50 Single Pulse Power 40 20 --25 0 25 50 75 100 125 150 0 10 --3 10 --2 10 --1 1 10 100 600 TJ -- Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 2-4 Document Number: 71233 S-21251—Rev. B, 05-Aug-02