SI5435DC

Si5435DC Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -- 30 rDS(on) (Ω) 0.050 @ VGS = --10 V 0.080 @ VGS = --4.5 V ID (A) --5.6 --4.0 1206-8 ChipFETt 1 D D D D S D D G S G Marking Code BE XX Lot Traceability and Date Code D P-Channel MOSFET Part # Code Bottom View Ordering Information: Si5435DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a on nuous ra urren Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipation Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State --30 20 Unit V --5.6 --4.0 --30 --2.1 2.5 1.3 --55 to 150 260 --4.1 --2.9 --1.1 1.3 0.7 W _C A THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C / C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71144 S-21251—Rev. B, 05-Aug-02 www.vishay.com 2-1 Si5435DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS DSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = --250 mA VDS = 0 V, VGS = 20 V VDS = --24 V, VGS = 0 V VDS = --24 V, VGS = 0 V, TJ = 85_C VDS  --5 V, VGS = --10 V VGS = --10 V, ID = --4.1 A VGS = --4.5 V, ID = --3.1 A VDS = --15 V, ID = --4.1 A IS = --1.1 A, VGS = 0 V --30 0.042 0.070 8 --0.8 --1.2 0.050 0.080 --1 100 --1 --5 V nA mA A Ω S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = --1.1 A, di/dt = 100 A/ms VDD = -- 15 V, RL = 15 Ω --15 15 ID ≅ --1 A, VGEN = --10 V, RG = 6 Ω VDS = --15 V, VGS = --10 V, ID = --4.1 A 16 3.6 3.1 11 5 40 20 30 20 10 80 40 60 ns 24 nC Notes a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 6 V 24 I D -- Drain Current (A) 5V I D -- Drain Current (A) 24 30 TC = --55_C 25_C Transfer Characteristics 18 18 125_C 12 12 4V 6 3V 0 0.0 6 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) www.vishay.com 2-2 Document Number: 71144 S-21251—Rev. B, 05-Aug-02 Si5435DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.16 r DS(on) -- On-Resistance ( Ω ) 1200 0.12 VGS = 10 V 0.08 VGS = 4.5 V 0.04 C -- Capacitance (pF) Ciss Capacitance 900 600 300 Crss Coss 0.00 0 6 12 18 24 30 0 0 6 12 18 24 30 ID -- Drain Current (A) VDS -- Drain-to-Source Voltage (V) Gate Charge 10 V GS -- Gate-to-Source Voltage (V) VDS = 15 V ID = 4.1 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 4.1 A 1.4 6 r DS(on) -- On-Resistance (Ω ) (Normalized) 8 12 16 1.2 4 1.0 2 0.8 0 0 4 Qg -- Total Gate Charge (nC) 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.16 On-Resistance vs. Gate-to-Source Voltage I S -- Source Current (A) TJ = 150_C 10 r DS(on) -- On-Resistance ( Ω ) 0.12 ID = 4.1 A 0.08 TJ = 25_C 0.04 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V) Document Number: 71144 S-21251—Rev. B, 05-Aug-02 www.vishay.com 2-3 Si5435DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0.6 V GS(th) Variance (V) ID = 250 mA 0.4 0.2 0.0 --0.2 --0.4 --50 10 Power (W) 30 50 Single Pulse Power 40 20 --25 0 25 50 75 100 125 150 0 10 --3 10 --2 10 --1 1 10 100 600 TJ -- Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 2-4 Document Number: 71144 S-21251—Rev. B, 05-Aug-02