SI5445DC

Specification Comparison Vishay Siliconix Si5445BDC vs. Si5445DC Description: Package: Pin Out: P-Channel, 1.8-V (G-S) MOSFET 1206-8 ChipFET® Identical Part Number Replacements: Si5445BDC-T1-E3 Replaces Si5445DC-T1-E3 Si5445BDC-T1-E3 Replaces Si5445DC-T1 Summary of Performance: The Si5445BDC is the replacement to the original Si5445DC; both parts perform identically, including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Si5445BDC Si5445DC Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range Maximum Junction-to-Ambient TA = 25°C TA = 70°C VDS VGS ID IDM IS PD Tj & Tstg RthJA -8 +8 -7.1 -5.2 -20 -2.1 2.5 1.3 -55 to 150 50 -8 +8 -7.1 -5.2 -20 -2.1 2.5 1.3 -55 to 150 50 W °C °C/W A V SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current VGS = -4.5 V VGS= -4.5 V Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS = -2.5 V VGS = -1.8 V gfs VSD Qg Qgs Qgd Rg td(on) tr td(off) tf trr rDS(on) VGS(th) IGSS IDSS ID(on) -20 0.027 0.035 0.050 18 -0.8 14 1.8 3.3 8 12 22 75 50 75 -1.2 21 0.033 0.043 0.060 -0.45 -1.0 +100 -1 -20 0.030 0.040 0.052 18 -0.8 17 2.8 2.6 NS 15 45 110 65 30 -1.2 26 nC Ω 25 70 165 100 60 ns 0.035 0.047 0.062 S V Ω -0.45 NS +100 -1 V nA µA A Symbol Min Si5445BDC Typ Max Min Si5445DC Typ Max Unit Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Switching 20 35 115 75 115 Turn-On Time Turn-Off Time Source-Drain Reverse Recovery Time Document Number 74051 14-Apr-05 www.vishay.com