New Product
Si5458DU
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.041 at VGS = 10 V 0.051 at VGS = 4.5 V ID (A)d, e 6 2.8 nC 6 Qg (Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
PowerPAK® ChipFET Single
1 2
D D D D D D G S S
APPLICATIONS
• Load Switch • HDD DC/DC
D (1, 2, 3, 6, 7, 8)
3 4
Marking Code AP XXX Lot Traceability and Date Code Part # Code G (4)
8 7
6 5
Bottom View Ordering Information: Si5458DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
(5) S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)f, g Continuous Source-Drain Diode Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit 30 ± 20 6e 6e a, b, e 6 6a, b, e 20 6 2.9a, b 10.4 6.7 3.5a, b 2.2a, b - 55 to 150 260 Unit V
A
PD TJ, Tstg
W
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit t≤5s RthJA 30 36 Maximum Junction-to-Ambienta, c °C/W 10 12 Maximum Junction-to-Case (Drain) Steady State RthJC Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 72 °C/W. d. Based on TC = 25 °C. e. Package limited. f. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. g. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 65019 S09-1392-Rev. A, 20-Jul-09 www.vishay.com 1
New Product
Si5458DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 5.6 A, VGS = 0 V 0.8 11 4 6 5 TC = 25 °C 1.2 20 1.2 20 8 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 15 V, RL = 2.7 Ω ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω VDD = 15 V, RL = 2.7 Ω ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz 0.6 VDS = 15 V, VGS = 10 V, ID = 7.1 A VDS = 15 V, VGS = 4.5 V, ID = 7.1 A VDS = 15 V, VGS = 0 V, f = 1 MHz 325 60 30 6 2.8 1.1 0.8 2.8 12 13 16 11 4 9 11 8 5.6 18 20 25 17 8 18 20 15 ns Ω 9 4.2 nC pF VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 70 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 7.1 A VGS = 4.5 V, ID = 6.3 A VDS = 15 V, ID = 7.1 A 15 0.034 0.042 15 0.041 0.051 1.2 30 32 -5 3 ± 100 1 10 V mV/°C V nA µA A Ω S Symbol Test Conditions Min. Typ. Max. Unit
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 65019 S09-1392-Rev. A, 20-Jul-09
New Product
Si5458DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 VGS = 10 V thru 4 V 4 I D - Drain Current (A) 5
15 I D - Drain Current (A)
3
10
2 TC = 25 °C 1 TC = 125 °C TC = - 55 °C
5
VGS = 3 V
0 0.0
0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.06 400
Transfer Characteristics
Ciss R DS(on) - On-Resistance (Ω) 0.05 VGS = 4.5 V 0.04 VGS = 10 V 0.03 C - Capacitance (pF) 300
200
100
Coss
0.02 0 5 10 ID - Drain Current (A) 15 20
0 0
Crss 5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10 ID = 7.1 A VGS - Gate-to-Source Voltage (V) 8 R DS(on) - On-Resistance 1.5 1.7
Capacitance
VGS = 10 V; ID = 7.1 A
(Normalized)
6 VDS = 15 V VDS = 24 V 4
1.3
1.1
VGS = 4.5 V; ID = 6.3 A
2
0.9
0 0 1 2 3 4 5 6
0.7 - 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65019 S09-1392-Rev. A, 20-Jul-09
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New Product
Si5458DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.10
10 TJ = 150 °C TJ = 25 °C
R DS(on) - On-Resistance (Ω)
0.08
I S - Source Current (A)
0.06 TJ = 125 °C 0.04 TJ = 25 °C 0.02
1
0.1 0.0
0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
2.3 30
On-Resistance vs. Gate-to-Source Voltage
2.1
25
1.9 ID = 250 µA 1.7 Power (W) VGS(th) (V)
20
15
1.5
10
1.3
5
1.1 - 50
- 25
0
25
50
75
100
125
150
0 0.001
0.01
0.01 Time (s)
1
10
100
TJ - Temperature (°C)
Threshold Voltage
100 Limited by RDS(on)* 10 100 µs 1
Single Pulse Power
I D - Drain Current (A)
1 ms 10 ms 100 ms 1 s, 10 s DC TA = 25 °C Single Pulse BVDSS Limited
0.1
0.01 0.1
1
10
100
VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65019 S09-1392-Rev. A, 20-Jul-09
New Product
Si5458DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
12 I D - Drain Current (A)
9 Package Limited 6
3
0 0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
15 2.4
12 1.8 Power (W) Power (W) 9
1.2
6
0.6 3
0 0 25 50 75 100 125 150
0.0 0 25 50 75 100 125 150
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 65019 S09-1392-Rev. A, 20-Jul-09
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New Product
Si5458DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05
t1 Notes: PDM
0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10
t2 1. Duty Cycle, D =
t1 t2 2. Per Unit Base = RthJA = 72 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
100
1000
10 000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2
0.1 0.05 0.02 Single Pulse 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1
0.1 10 -4
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65019.
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Document Number: 65019 S09-1392-Rev. A, 20-Jul-09
Package Information
Vishay Siliconix
PowerPAK® ChipFET® SINGLE PAD
D D (8) D (7) D (6) S (5)
E
D (1)
D (2)
D (3)
G (4)
Z A
C b e
A1 H D (1) D2 D (2) D (3) K G (4) L K1 DETAIL Z E2 D3 E3
D (8)
D (7)
D (6)
S (5)
Backside view of single pad
MILLIMETERS DIM. A A1 b C D D2 D3 E E2 E3 e H K K1 L 0.15 0.25 0.30 0.30 MIN. 0.70 0 0.25 0.15 2.92 1.75 0.20 1.82 1.38 0.45 NOM. 0.75 0.30 0.20 3.00 1.87 0.25 1.90 1.50 0.50 0.65 BSC 0.20 0.35 0.25 0.40 0.006 0.010 0.012 0.012 MAX. 0.85 0.05 0.35 0.25 3.08 2.00 0.30 1.98 1.63 0.55 MIN. 0.028 0 0.010 0.006 0.115 0.069 0.008 0.072 0.054 0.018
INCHES NOM. 0.030 0.012 0.008 0.118 0.074 0.010 0.075 0.059 0.020 0.026 BSC 0.008 0.014 0.010 0.016 MAX. 0.033 0.002 0.014 0.010 0.121 0.079 0.012 0.078 0.064 0.022
Document Number: 73203 19-Jul-10
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Package Information
Vishay Siliconix
PowerPAK® ChipFET® DUAL PAD
D D1 (8) D1 (7) D2 (6) S2 (5)
E
SI (1)
GI (2)
S2 (3)
G2 (4)
Z A
C b e
A1 SI (1) GI (2) S2 (3) L K DETAIL Z E2 H D1 (8) D1 (7) K1 Backside view of dual pad D2 (6) D2 (5) G2 (4)
MILLIMETERS DIM. A A1 b C D D2 E E2 e H K K1 L 0.15 0.20 0.20 0.30 MIN. 0.70 0 0.25 0.15 2.92 1.07 1.82 0.92 NOM. 0.75 0.30 0.20 3.00 1.20 1.90 1.05 0.65 BSC 0.20 0.35 0.25 0.40 0.006 0.008 0.008 0.012 MAX. 0.85 0.05 0.35 0.25 3.08 1.32 1.98 1.17 MIN. 0.028 0 0.010 0.006 0.115 0.042 0.072 0.036
INCHES NOM. 0.030 0.012 0.008 0.118 0.047 0.075 0.041 0.026 BSC 0.008 0.014 0.010 0.016 MAX. 0.033 0.002 0.014 0.010 0.121 0.052 0.078 0.046
ECN: C10-0618-Rev. C, 19-Jul-09 DWG: 5940
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Document Number: 73203 19-Jul-10
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® ChipFET® Single
0.225 (0.009) 0.200 (0.008) 0.650 (0.026) 0.300 (0.012)
0.350 (0.014) 0.300 (0.012)
0.100 (0.004)
0.250 (0.010) 1.900 (0.075) 1.500 (0.059)
0.500 (0.020)
0.350 (0.014) 0.350 (0.014)
1.870 (0.074) 2.575 (0.101)
0.305 (0.012)
Recommended Minimum Pads Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 69948 Revision: 21-Jan-08
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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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