SI5473DC

Si5473DC New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.027 @ VGS = - 4.5 V - 12 0.0335 @ VGS = - 2.5 V 0.045 @ VGS = - 1.8 V FEATURES ID (A) - 8.1 - 7.3 - 6.3 D TrenchFETr Power MOSFETS D Low rDS(on) and Excellent Power Handling In Compact Footprint APPLICATIONS D Battery and Load Switch for Portable Devices S 1206-8 ChipFETr 1 D D D D S D D G G Marking Code BI XXX Lot Traceability and Date Code D P-Channel MOSFET Bottom View Ordering Information: Si5473DC-T1 Part # Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State - 12 "8 Unit V - 8.1 - 5.9 "20 - 2.1 2.5 1.3 - 55 to 150 260 - 5.9 - 4.3 - 1.1 1.3 0.7 W _C A THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72261 S-31265—Rev. A, 16-Jun-03 www.vishay.com 1 Si5473DC Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 9.6 V, VGS = 0 V VDS = - 9.6 V, VGS = 0 V, TJ = 85_C VDS p - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 5.9 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 5.3 A VGS = - 1.8 V, ID = - 2.2 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 5 V, ID = - 5.9 A IS = - 1.1 A, VGS = 0 V - 20 0.022 0.028 0.036 20 - 0.8 - 1.2 0.027 0.0335 0.045 S V W - 0.40 - 1.0 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.1 A, di/dt = 100 A/ms VDD = - 6 V, RL = 6 W V, ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 6 V, VGS = - 4.5 V, ID = - 5.9 A 21 3.1 6.0 25 50 145 90 70 40 75 220 135 105 ns 32 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2 V 15 I D - Drain Current (A) I D - Drain Current (A) 16 20 Transfer Characteristics 12 10 1.5 V 5 8 TC = - 55_C 4 25_C - 55_C 1.0 1.5 2.0 2.5 1V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com 0 0.0 0.5 VGS - Gate-to-Source Voltage (V) Document Number: 72261 S-31265—Rev. A, 16-Jun-03 2 Si5473DC New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) - On-Resistance ( W ) 3000 2500 C - Capacitance (pF) 2000 1500 1000 500 0 0 5 10 ID - Drain Current (A) 15 20 0 2 4 6 8 10 12 Crss Coss Ciss Vishay Siliconix Capacitance 0.08 0.06 VGS = 1.8 V VGS = 2.5 V 0.02 VGS = 4.5 V 0.00 0.04 VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 5.9 A 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0 0 5 10 15 20 25 Qg - Total Gate Charge (nC) 0.6 - 50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.9 A 4 3 2 1 r DS(on) - On-Resistance (W) (Normalized) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.08 0.10 On-Resistance vs. Gate-to-Source Voltage 0.06 ID = 5.9 A 0.04 ID = 2.2 A TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72261 S-31265—Rev. A, 16-Jun-03 www.vishay.com 3 Si5473DC Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 0.1 0.0 - 0.1 - 0.2 - 50 10 Power (W) 30 50 Single Pulse Power 40 20 - 25 0 25 50 75 100 125 150 0 10 - 3 10 - 2 10 - 1 1 10 100 600 TJ - Temperature (_C) Time (sec) 100 Safe Operating Area rDS(on) Limited IDM Limited 10 I D - Drain Current (A) P(t) = 0.001 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 1 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72261 S-31265—Rev. A, 16-Jun-03 Si5473DC New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 Square Wave Pulse Duration (sec) 10 - 1 1 Document Number: 72261 S-31265—Rev. A, 16-Jun-03 www.vishay.com 5