SI5513CDC-T1-E3

Si5513CDC Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 RDS(on) (Ω) 0.055 at VGS = 4.5 V 0.085 at VGS = 2.5 V 0.150 at VGS = - 4.5 V 0.255 at VGS = - 2.5 V ID (A)a Qg (Typ.) 4g 4g - 3.7 - 2.9 2.6 nC FEATURES • TrenchFET® Power MOSFETs • 100 % Rg Tested RoHS APPLICATIONS COMPLIANT P-Channel - 20 3.6 nC • Load Switch for Portable Devices 1206-8 Chip-FET ® 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 S2 Marking Code EG XXX G1 Lot Traceability and Date Code G2 Part # Code Bottom View Ordering Information: Si5513CDC-T1-E3 (Lead (Pb)-free) S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS N-Channel 20 ± 12 4g 4g 4b, c, g 3.5b, c 10 2.6 1.4b, c 3.1 2.0 1.7b, c 1.1b, c - 55 to 150 260 - 3.7 - 3.0 - 2.4b, c - 1.9b, c -8 - 2.6 - 1.7b, c 3.1 2.0 1.3b, c 0.8b, c A P-Channel - 20 Unit V Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Maximum Junction-to-Foot (Drain) Junction-to-Ambientb, f t≤5s Steady State Symbol RthJA RthJF Typ. 62 32 Max. 74 40 P-Channel Typ. 77 33 Max. 95 40 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 115 °C/W for N-Channel and 130 °C/W for P-Channel. g. Package limited. Document Number: 68806 S-82490-Rev. B, 13-Oct-08 www.vishay.com 1 Si5513CDC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = - 250 µA ID = 250 µA ID = - 250 µA ID = 250 µA ID = - 250 µA VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 12 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS = - 20 V, VGS = 0 V, TJ = 55 °C On-State Drain Currentb ID(on) VDS ≥ 5 V, VGS = 4.5 V VDS ≤ - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 4.4 A Drain-Source On-State Resistanceb RDS(on) VGS = - 4.5 V, ID = - 2.4 A VGS = 2.5 V, ID = 3.6 A VGS = - 2.5 V, ID = - 1.9 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss P-Channel VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 5 V, ID = 4.4 A Total Gate Charge Qg VDS = - 10 V, VGS = - 5 V, ID = - 2.4 A N-Channel VDS = 10 V, VGS = 4.5 V, ID = 4.4 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 2.4 A f = 1 MHz N-Ch N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.6 1.3 285 252 65 62 30 45 2.8 3.9 2.6 3.6 0.7 0.6 0.5 1.2 3 6.5 6 13 Ω 4.2 5.6 3.9 5.4 nC pF gfs VDS = 10 V, ID = 4.4 A VDS = - 10 V, ID = - 2.4 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 10 -8 0.045 0.120 0.065 0.204 12 5 0.055 0.150 0.085 0.255 S Ω 0.6 - 0.6 20 - 20 23.7 - 19.5 - 3.5 2.8 1.5 - 1.5 100 - 100 1 -1 10 - 10 A µA V nA mV/°C V Symbol Test Conditions Min. Typ. Max. Unit www.vishay.com 2 Document Number: 68806 S-82490-Rev. B, 13-Oct-08 Si5513CDC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb N-Channel IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C P-Channel IF = - 1.9 A, dI/dt = - 100 A/µs, TJ = 25 °C IS = 3.5 A, VGS = 0 V IS = - 1.9 A, VGS = 0 V TC = 25 °C N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.8 - 0.8 10 15 3 9 6 10 4 5 ns 2.6 - 2.6 10 -8 1.2 - 1.2 15 22.5 4.5 13.5 V ns nC A td(on) tr td(off) tf td(on) tr td(off) tf N-Ch N-Channel VDD = 10 V, RL = 2.9 Ω ID ≅ 3.5 A, VGEN = 10 V, Rg = 1 Ω P-Channel VDD = - 10 V, RL = 5.3 Ω ID ≅ - 1.9 A, VGEN = - 10 V, Rg = 1 Ω P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDD = 10 V, RL = 2.9 Ω ID ≅ 3.5 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = - 10 V, RL = 5.3 Ω ID ≅ - 1.9 A, VGEN = - 4.5 V, Rg = 1 Ω P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 5 4 10 12 14 15 6 6 8 19 9 40 16 18 8 8 10 8 20 18 21 23 12 12 16 29 18 60 24 27 16 16 ns Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68806 S-82490-Rev. B, 13-Oct-08 www.vishay.com 3 Si5513CDC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 VGS = 5 thru 2.5 V 8 I D - Drain Current (A) I D - Drain Current (A) 4 5 6 VGS = 2 V 4 3 2 TC = 25 °C 1 2 VGS = 1.5 V 0 0 1 2 3 4 5 TC = 125 °C 0 0.0 TC = - 55 °C 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.10 400 Transfer Characteristics R DS(on) - On-Resistance (Ω) 0.08 C - Capacitance (pF) VGS = 2.5 V 0.06 VGS = 4.5 V 0.04 320 Ciss 240 160 0.02 80 Crss Coss 0.00 0 2 4 6 8 10 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 4.4 A VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V 6 VDS = 16 V 4 R DS(on) - On-Resistance 1.4 1.6 Capacitance VGS = 4.5 V; ID = 4.4 A (Normalized) 1.2 VGS = 2.5 V; ID = 3.6 A 1.0 2 0.8 0 0 1 2 3 4 5 6 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge www.vishay.com 4 On-Resistance vs. Junction Temperature Document Number: 68806 S-82490-Rev. B, 13-Oct-08 Si5513CDC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.10 ID = 4.4 A R DS(on) - On-Resistance (Ω) 0.08 TJ = 125 °C 0.06 I S - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.04 TJ = 25 °C 0.02 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 12 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.3 On-Resistance vs. Gate-to-Source Voltage 30 25 1.1 20 Power (W) 150 VGS(th) (V) 0.9 ID = 250 µA 15 10 0.7 5 0.5 - 50 - 25 0 25 50 75 100 125 0 10-4 10-3 10-2 10-1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage 100 Single Pulse Power Limited by RDS(on)* 10 I D - Drain Current (A) 100 µs 1 ms 10 ms 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 100 ms 1 s, 10 s DC 1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68806 S-82490-Rev. B, 13-Oct-08 www.vishay.com 5 Si5513CDC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 6 I D - Drain Current (A) Package Limited 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4.0 1.5 3.2 1.2 Power (W) 2.4 Power (W) 0 25 50 75 100 125 150 0.9 1.6 0.6 0.8 0.3 0.0 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 68806 S-82490-Rev. B, 13-Oct-08 Si5513CDC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 95 °C/W 3. TJM - TA = PDMZthJA(t) 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 68806 S-82490-Rev. B, 13-Oct-08 www.vishay.com 7 Si5513CDC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 2.0 VGS = 5 thru 3 V I D - Drain Current (A) VGS = 2.5 V 4 I D - Drain Current (A) 6 1.5 1.0 TC = 25 °C 0.5 TC = 125 °C VGS = 2 V 2 VGS = 1.5 V 0 0 1 2 3 4 5 0.0 0.0 TC = - 55 °C 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.30 450 Transfer Characteristics 0.25 R DS(on) - On-Resistance (Ω) VGS = 2.5 V 0.20 C - Capacitance (pF) 360 Ciss 270 0.15 VGS = 4.5 V 180 Coss Crss 0 0.10 0.05 90 0.00 0 2 4 ID - Drain Current (A) 6 8 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 2.4 A VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V 6 VDS = 16 V 4 RDS(on) - On-Resistance 1.4 1.6 Capacitance VGS = - 4.5 V; I D = - 2.4 A (Normalized) 1.2 1.0 VGS = - 2.5 V; I D = - 1.9 A 2 0.8 0 0 2 4 6 8 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge www.vishay.com 8 On-Resistance vs. Junction Temperature Document Number: 68806 S-82490-Rev. B, 13-Oct-08 Si5513CDC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.30 ID = - 2.4 A R DS(on) - On-Resistance (Ω) 0.24 I S - Source Current (A) 10 0.18 TJ = 125 °C 0.12 TJ = 25 °C TJ = 150 °C 1 TJ = 25 °C 0.06 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 12 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.2 60 On-Resistance vs. Gate-to-Source Voltage 1.1 50 1.0 VGS(th) (V) Power (W) 40 0.9 ID = 250 µA 0.8 30 20 0.7 10 0.6 - 50 - 25 0 25 50 75 100 125 150 0 0.0001 0.001 0.01 0.1 Time (s) 1 10 100 TJ - Temperature (°C) Threshold Voltage 10 Limited by RDS(on)* 100 µs I D - Drain Current (A) 1 1 ms 10 ms 0.1 TA = 25 °C Single Pulse 0.01 0.1 100 ms 1 s, 10 s DC BVDSS Limited Single Pulse Power 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 68806 S-82490-Rev. B, 13-Oct-08 www.vishay.com 9 Si5513CDC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 4 I D - Drain Current (A) 3 2 1 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4.0 1.2 3.2 0.9 Power (W) 2.4 Power (W) 0.6 1.6 0.3 0.8 0.0 0 25 50 75 100 125 150 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 68806 S-82490-Rev. B, 13-Oct-08 Si5513CDC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 105 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68806. Document Number: 68806 S-82490-Rev. B, 13-Oct-08 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1